• 제목/요약/키워드: Logic Gate

검색결과 390건 처리시간 0.026초

다치양자논리에 의한 다중제어 Toffoli 게이트의 실현 (Realization of Multiple-Control Toffoli gate based on Mutiple-Valued Quantum Logic)

  • 박동영
    • 한국항행학회논문지
    • /
    • 제16권1호
    • /
    • pp.62-69
    • /
    • 2012
  • 다중제어 Toffoli(multiple-control Toffoli, MCT) 게이트는 원시 게이트에 의존적인 양자 기술을 필요로 하는 매크로 레벨 다치(multiple-valued) 게이트이며, Galois Field sum-of-product(GFSOP)형 양자논리 함수의 합성에 사용되어 왔다. 가역 논리는 저전력 회로 설계를 위한 양자계산(quantum computing, QC)에서 매우 중요하다. 본 논문은 먼저 GF4 가역 승산기를 제안한 후 GF4 승산기 기반의 quaternary MCT 게이트 실현을 제안하였다. MCT 게이트 실현을 위한 비교에서 제안한 MCT 게이트가 다중제어 입력이 증가할수록 종전의 작은 MCT 게이트 합성 방법보다 원시 게이트 수와 게이트 지연을 상당량 줄일 수 있음을 보였다.

유기 박막 트랜지스터를 이용한 유연한 디스플레이의 게이트 드라이버용 로직 게이트 구현 (Implementation of Logic Gates Using Organic Thin Film Transistor for Gate Driver of Flexible Organic Light-Emitting Diode Displays)

  • 조승일;미즈카미 마코토
    • 한국전자통신학회논문지
    • /
    • 제14권1호
    • /
    • pp.87-96
    • /
    • 2019
  • 유기 박막 트랜지스터 (OTFT) 백플레인을 이용한 유연한 유기 발광 다이오드 (OLED) 디스플레이가 연구되고 있다. OLED 디스플레이의 구동을 위해서 게이트 드라이버가 필요하다. 저온, 저비용 및 대 면적 인쇄 프로세스를 사용하는 디스플레이 패널의 내장형 게이트 드라이버는 제조비용을 줄이고 모듈 구조를 단순화한다. 이 논문에서는 유연한 OLED 디스플레이 패널의 내장형 게이트 드라이버 제작을 위하여 OTFT를 사용한 의사 CMOS (pseudo complementary metal oxide semiconductor) 로직 게이트를 구현한다. 잉크젯 인쇄형 OTFT 및 디스플레이와 동일한 프로세스를 사용하여 유연한 플라스틱 기판 상에 의사 CMOS 로직 게이트가 설계 및 제작되며, 논리 게이트의 동작은 측정 실험에 의해 확인된다. 최대 1 kHz의 입력 신호 주파수에서 의사 CMOS 인버터의 동작 결과를 통하여 내장형 게이트 드라이버의 구현 가능성을 확인하였다.

Optically Programmable Gate Array 구현을 위한 수직 공진형 완전공핍 광싸이리스터 (Design of Monolithically Integrated Vertical Cavity Laser with Depleted Optical Thyristor for Optically Programmable Gate Array)

  • 최운경;김도균;최영완
    • 전기학회논문지
    • /
    • 제58권8호
    • /
    • pp.1580-1584
    • /
    • 2009
  • We have theoretically analyzed the monolithic integration of vertical cavity lasers with depleted optical thyristor (VCL-DOT) structure and experimentally demonstrated optical logic gates such as AND-gate, OR-gate, and INVERTER implemented by VCL-DOT for an optical programmable gate array. The optical AND and OR gates have been realized by changing a input bias of the single VCL-DOTs and all kinds of optical logic functions are also implemented by adjusting an intensity of the reference input beams into the differential VCL-DOTs. To achieve the high sensitivity, high slope efficiency and low threshold current, a small active region of lasing part and a wide detecting area are simultaneously designed by using a selective oxidation process. The fabricated devices clearly show nonlinear s-shaped current-voltage characteristics and lasing characteristics of a low threshold current with 0.65 mA and output spectrum at 854 nm.

속도 향상을 위한 병합트랜지스터를 이용한 ISL의 설계 (Design of ISL(Intergrated Schottky Logic) for improvement speed using merged transistor)

  • 장창덕;백도현;이정석;이용재
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
    • /
    • pp.21-25
    • /
    • 1999
  • In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. In the result, we get amplitude of logic voltage of 200mV, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26ns in AC characteristic output of Ring-Oscillator connected Gate.

  • PDF

CMOS 디지털 게이트의 최대소모전력 예측 매크로 모델 (Macro-model for Estimation of Maximum Power Dissipation of CMOS Digital Gates)

  • 김동욱
    • 대한전기학회논문지:전력기술부문A
    • /
    • 제48권10호
    • /
    • pp.1317-1326
    • /
    • 1999
  • As the integration ratio and operation speed increase, it has become an important problem to estimate the dissipated power during the design procedure as a method to reduce the TTM(time to market). This paper proposed a prediction model to estimate the maximum dissipated power of a CMOS logic gate. This model uses a calculational method. It was formed by including the characteristics of MOSFETs of which a CMOS gate consists, the operational characteristics of the gate, and the characteristics of the input signals. As the modeling process, a maximum power estimation model for CMOS inverter was formed first, and then a conversion model to convert a multiple input CMOS gate into a corresponding CMOS inverter was proposed. Finally, the power model for inverter was applied to the converted result so that the model could be applied to a general CMOS gate. For experiment, several CMOS gates were designed in layout level by $0.6{\mu}m$ layout design rule. The result by comparing the calculated results with those from HSPICE simulations for the gates showed that the gate conversion model has within 5% of the relative error rate to the SPICE and the maximum power estimation model has within 10% of the relative error rate. Thus, the proposed models have sufficient accuracies. Also in calculation time, the proposed models was more than 30 times faster than SPICE simulation. Consequently, it can be said that the proposed model could be used efficiently to estimate the maximum dissipated power of a CMOS logic gate during the design procedure.

  • PDF

Single-Electron Logic Cells and SET/FET Hybrid Integrated Circuits

  • Kim, S.J.;Lee, C.K.;Lee, J.U.;Choi, S.J.;Hwang, J.H.;Lee, S.E.;Choi, J.B.;Park, K.S.;Lee, W.H.;Paik, I.B.;Kang, J.S.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제6권1호
    • /
    • pp.52-58
    • /
    • 2006
  • Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.

프로그램된 FPGA의 비트스트림 데이터로부터 로직추출 알고리즘 구현 (Implementation of a Logic Extraction Algorithm from a Bitstream Data for a Programmed FPGA)

  • 정민영;이재흠;장영조;정은구;조경록
    • 한국콘텐츠학회논문지
    • /
    • 제18권1호
    • /
    • pp.10-18
    • /
    • 2018
  • 본 논문은 Xilinx FPGA(Field Programmable Gate Array)에 다운로드하는 비트스트림으로부터 FPGA의 리소스 중 하나인 LUT(Look Up Table)로직을 재합성하는 방법을 제안한다. 비트스트림과 디바이스 구조는 밀접한 관계가 있기 때문에, 비트스트림을 분석하기 위해서 FPGA디바이스 구조를 분석해야 한다. 동일한 네트리스트를 사용하여 여러 가지 로직을 합성하거나, 위치를 변경하면서 로직을 합성하는 등 다양한 상황, 여러 입력 변수에 대한 비트스트림과 FPGA 디바이스 구조를 비교분석해 비트스트림 구조를 파악한다. 분석된 비트스트림 구조와 다양한 논리함수의 비트스트림을 바탕으로 하나의 LUT에 대한 진리표를 구성하고, 구성된 LUT의 진리표와 제안한 알고리즘을 기반으로 LUT의 로직을 재합성 한다. 제안한 알고리즘은 LUT에 로직을 구현할 때 사용되는 입력 핀과 출력 핀을 결정할 수 있으며, FPGA에 다운로드 되는 비트스트림으로부터 게이트 레벨의 로직회로를 얻을 수 있었다.

멀티플렉서에 기초한 논리모듈의 Library 생성 방법 (A Library Generation Method for Multiplexor-based Logic Module)

  • 조한진;배영환;박인학
    • 전자공학회논문지A
    • /
    • 제32A권10호
    • /
    • pp.93-101
    • /
    • 1995
  • The evaluation of the logic capability and the library generation method of the multiplexor-based logic module is described. Optimizing logic module for silicon area and logic capability is essential to build a efficient FPGAs(Field-Programmable Gate Arrays). Because the multiplexor-based logic module can implement a large number of functions, it presents difficulties for library-based approaches. However, the logic functions of the logic module can be significantly reduced by lmiting the number of variables and sum-of-products and by removing same functions with different variable ordering using algorithm presented in this paper.

  • PDF

DEVELOPMENT OF RPS TRIP LOGIC BASED ON PLD TECHNOLOGY

  • Choi, Jong-Gyun;Lee, Dong-Young
    • Nuclear Engineering and Technology
    • /
    • 제44권6호
    • /
    • pp.697-708
    • /
    • 2012
  • The majority of instrumentation and control (I&C) systems in today's nuclear power plants (NPPs) are based on analog technology. Thus, most existing I&C systems now face obsolescence problems. Existing NPPs have difficulty in repairing and replacing devices and boards during maintenance because manufacturers no longer produce the analog devices and boards used in the implemented I&C systems. Therefore, existing NPPs are replacing the obsolete analog I&C systems with advanced digital systems. New NPPs are also adopting digital I&C systems because the economic efficiencies and usability of the systems are higher than the analog I&C systems. Digital I&C systems are based on two technologies: a microprocessor based system in which software programs manage the required functions and a programmable logic device (PLD) based system in which programmable logic devices, such as field programmable gate arrays, manage the required functions. PLD based systems provide higher levels of performance compared with microprocessor based systems because PLD systems can process the data in parallel while microprocessor based systems process the data sequentially. In this research, a bistable trip logic in a reactor protection system (RPS) was developed using very high speed integrated circuits hardware description language (VHDL), which is a hardware description language used in electronic design to describe the behavior of the digital system. Functional verifications were also performed in order to verify that the bistable trip logic was designed correctly and satisfied the required specifications. For the functional verification, a random testing technique was adopted to generate test inputs for the bistable trip logic.

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

  • Wang, Wei;Xu, Hongsong;Huang, Zhicheng;Zhang, Lu;Wang, Huan;Jiang, Sitao;Xu, Min;Gao, Jian
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제16권1호
    • /
    • pp.91-105
    • /
    • 2016
  • Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.