• 콘크리트학회논문집
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• 제13권4호
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• pp.371-378
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• 2001

콘크리트의 파괴 특성을 평가하기 위한 매개변수, 모델, 그리고 시험방법 등이 현재 많이 제안되고 있으며, 이러한 발전으로 최근에는 콘크리트의 비선형 파괴와 준취성 파괴를 해석 가능하게 하고 있다. 이 논문에서는 파괴 매개변수에 대하여 간략히 소개하고 3점 휨시험을 시행하여 콘크리트의 파괴인성을 나타내는 J-적분값 ($J_{Ic}$ )과 다른 매개변수($K_{Ic}$ , $G_{F}$ )를 비교하였다. 콘크리트 보 시험체의 두께(width)와 노치 길이에 따라 파괴인성값이 어떻게 변화하는지를 실험적으로 고찰하였고 콘크리트 파괴 인성을 측정하기 위해서 응력-변위 곡선을 사용하였다. $G_{F}$ 와$ J_{Ic}$ 의 값은 노치 길이가 클수록 감소하는 경향을 보이며 $G_{F}$ 가 $J_{Ic}$ 보다 덜 민감한 반응을 보이는 것으로 나타났다. 따라서, 콘크리트 파괴 인성 매개변수로써 전자가 후자보다 더 유용한 것으로 나타났다. $G_{v}$ 와 $J_{Ic}$ 의 값은 콘크리트 시험체 두께가 75mm에서 150mm로 커질 때 증가한다. 따라서, 시험체 두께의 영향이 콘크리트 파괴 인성을 결정할 때 고려되어져야 한다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.