• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.1-8
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• 1994

A five mirror system with a reduction magnification(M=+1/5) is designed for DUV optical lithography. First, for spherical mirror systems, the numerical solutions of all zero 3rd order aberrations are derived and the 3-dimensional shape of the solution-domain is obtained. In these solutions, we select solutions which have as less residual aberrations and smaller central obscurration as possible and the aspherization is carried out to the last two spherical mirrors to obtain a system that has as higher NA as possible. Finally we obtain the system of which NA is 0.45, the central obscuration is about 25% and the resolution is about 650 cycles/mm at the 50% MTF value criterion and the depth of focus of 0.8${\mu}m$ for the nearly incoherent illumination (${\sigma}$=1.0) and the wavelength of 0.193${\mu}m$ (ArF excimer laser line).

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2006.11a
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• pp.272-274
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• 2006

In this paper, we concentrate on the mask design problem for optical micro-lithography. The pre-distorted mask is obtained by minimizing the error between the designed output image and the projected output image. We use the particle swarm optimization(PSO) and fuzzy system to insure that the resulting images are identical to the desired image. Our method has good performance for the iteration number by an experiment.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.644-647
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• 2003

Resulting from reproducibility and possibility of mass production. many researches to fabricate micro lens array using lithography have been developed. However, it still remains the level of fabricating compensation lens. Therefore, to realize the fabrication of lens having high numerical aperture can be the key technology of ultra slim optical system. Reflow phenomenon have been researched to make lens having high refractive power. And through those researches, the possibility to fabrication of high refractive power lens has been investigated. In this paper, we analyze the effect of many parameters in reflow process to get an aspheric shape with high repeatability. And we make possible to estimate shape error, through we give direct information about decrease in volume of photoresist.

• Laser Solutions
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• v.10 no.2
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• pp.17-24
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• 2007

We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

• Design & Manufacturing
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• v.15 no.4
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• pp.65-71
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• 2021

In the early days of laser invention, it was simply used as a measuring tool, but as lasers became more common, they became an indispensable processing tool in the industry. Short-wavelength lasers are used to make patterns on wafers used in semiconductors depending on the wavelength, such as CO2 laser, YAG laser, green laser, and UV laser. At first, the hole of the PCB board mainly used for electronic parts was not thin and the hole size was large, so a mechanical drill was used. However, in order to realize product miniaturization and high integration, small hole processing lasers have become essential, and pattern exposure for small hole sizes has become essential. This paper intends to analyze the characteristics through patterns by exposing the PCB substrate through DMD and polygon scanner, which are different optical systems. Since the optical systems are different, the size of the patterns was made the same, and exposure was performed under the optimal conditions for each system. Pattern characteristics were analyzed through a 3D profiler. As a result of the analysis, there was no significant difference in line width between the two systems. However, it was confirmed that dmd had better pattern precision and polygon scanner had better productivity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.434-437
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• 2003

Evaluation or the patterning accuracy of e-beam lithography machines requires a high precision inspection system that is capable of measuring the true xy-locations of fiducial marks generated by the e-beam machine under test. Fiducial marks are fabricated on a single photo mask over the entire working area in the form of equally spaced two-dimensional grids. In performing the evaluation, the principles of self-calibration enable to determine the deviations of fiducial marks from their nominal xy-locations precisely, not being affected by the motion errors of the inspection system itself. It is. however, the fact that only repeatable motion errors can be eliminated, while random motion errors encountered in probing the locations of fiducial marks are not removed. Even worse, a random error occurring from the measurement of a single mark propagates and affects in determining locations of other marks, which phenomenon in fact limits the ultimate calibration accuracy of e-beam machines. In this paper, we describe an uncertainty analysis that has been made to investigate how random errors affect the final result of self-calibration of e-beam machines when one uses an optical inspection system equipped with high-resolution microscope objectives and a precision xy-stages. The guide of uncertainty analysis recommended by the International Organization for Standardization is faithfully followed along with necessary sensitivity analysis. The uncertainty analysis reveals that among the dominant components of the patterning accuracy of e-beam lithography, the rotationally symmetrical component is most significantly affected by random errors, whose propagation becomes more severe in a cascading manner as the number of fiducial marks increases

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.96-103
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• 1995

This art~cle reports on the formation of T - Gate with O.1$\mu$m foot and 0.4$\mu$m head width at PMMA/P( MMA/MAA) resist structure using a 30KV electron beam lithography system. From the result of Monte Carlo simulation on PMMA/P( MMA/MAA)/GaAs, we obtain the dissipation energy ratio of forwardscattered electron and backscattered electron within 0.1$\mu$m scattering radius is 19.5 : 1 0.1$\mu$m T - gate has been formed with 30KV gaussian electron beam at a 440$\mu C/\textrm{cm}^2$ dosage. The gamma value of PMMA and P(MMA/MAA) at MIBK : IPA=l : 1 developer was 2.3. The overlay accuracy(3$\sigma$) from mix-andmatch of optical stepper and Ekeam lithography system for fabricating HEMT device is accomplished below 0.1$\mu$m.

• Textile Coloration and Finishing
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• v.19 no.4
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• pp.32-37
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• 2007

In this study, we have obtained the protein patterns using the membrane patterning of soft-lithography technique. The rapid detection of protein including bovine serum albumin (BSA) was resulted from the interaction with 1,3-bisdicyanovinylindane. For the proof of the interaction between BSA and dye, the UV-vis absorption spectra of BSA and dye were observed at 278 nm and 580 nm, respectively. As expected, the absorption spectrum of the interaction between BSA and dye was observed at 584nm. The absorption spectrum of the interaction was red-shifted. In addition, the optical images of the selectively reacted protein patterns showed the distinctive change of patterned color at different pH conditions. Because the dye has negative charges, the charge of BSA at different pH conditions could influence the interaction behavior between dye and BSA. Therefore, in the case of pH 7, the selectively patterned protein substrates obtained deep blue color pattern caused by electrostatic interaction between negative charges of the dye and positive charges of the BSA. However, in the case of pH 10, selectively patterned protein substrates obtained light blue color pattern because the electrostatic interaction was relatively lower than pH 7 due to the change of overall charge distribution of BSA.

• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.146-153
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• 2019

The exposure system is a device that transfers a circuit pattern to a desired location. To display patterns on a substrate without deforming the optical characteristics, the characteristics of the optical exposure system are very important. Therefore, to form a microcircuit pattern, a small divergence angle should impinge on the irradiation area. Also, since the light from the source must react uniformly with the photosensitizer, it must have high luminance efficiency and uniformity of illumination. In this paper a parabolic reflector and an aspherical lens were designed to solve the problem of narrow-angle implementation, and it was confirmed by simulation analysis after their arrangement that the beam angle, uniformity, and maximum illuminance satisfied the target performance.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.11a
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• pp.37-41
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• 2005

When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.