• Title/Summary/Keyword: Linear Annealing Method

검색결과 37건 처리시간 0.025초

SiO$_2$의 전기 광학 효과를 이용한 고전계 측정 (Measurement of High Electric Field Using Linear Electric-Optic Effect of Crystalline SiO$_2$)

  • 김요희;이대영
    • 한국통신학회논문지
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    • 제17권2호
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    • pp.142-152
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    • 1992
  • 본 논문에서는 광파이버 센서로써 고전계(고전압)측정의 어려움을 해결하기 위하여 지금까지 알려진 다른 전기광학 소자보다 반파장 전압이 매우 높은 SiO2를 사용하여 고전계을 계측하기 위한 새로운 방법을 제시 하였다. SiO2를 비롯한 광학소자로 구성된 센서내부, 즉 전광자 및 편광자에서의 광변조식을 Stokes Parameter와 Mueller 행렬로 유도 하였고 이를 복굴절 결정에서의 전기광학 효과를 이론적으로 해석하고 위상지연과 반파장 전압을 계산하였다. 설계 제작한 광전압 센서에 , 분압없이 최대전압 20KV까지 공급 했을때의 출력신호를 검출한 결과 오차는 3%미만으로서 매우 우수한 직선성을 얻었다. SiO2의 온도변화(-20~60$^{\circ}$C)에 따른 출력전압 변화를 실험한 결과 최대 7.5%까지 변동율이 발생하였으나 열처리 한후로는 1.0% 이내로 개선된 특성을 보였다.

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Formation of nickel oxide thin film and analysis of its electrical properties

  • 노상수;서정환;이응안;이선길;박용준
    • 센서학회지
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    • 제14권1호
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    • pp.52-55
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    • 2005
  • Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of $10.5{\mu}{\Omega}cm$ to $2.84{\times}10^{4}{\mu}{\Omega}cm$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of $0{\sim}150^{\circ}C$. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.

A simple damper optimization algorithm for both target added damping ratio and interstorey drift ratio

  • Aydin, Ersin
    • Earthquakes and Structures
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    • 제5권1호
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    • pp.83-109
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    • 2013
  • A simple damper optimization method is proposed to find optimal damper allocation for shear buildings under both target added damping ratio and interstorey drift ratio (IDR). The damping coefficients of added dampers are considered as design variables. The cost, which is defined as the sum of damping coefficient of added dampers, is minimized under a target added damping ratio and the upper and the lower constraint of the design variables. In the first stage of proposed algorithm, Simulated Annealing, Nelder Mead and Differential Evolution numerical algorithms are used to solve the proposed optimization problem. The candidate optimal design obtained in the first stage is tested in terms of the IDRs using linear time history analyses for a design earthquake in the second stage. If all IDRs are below the allowable level, iteration of the algorithm is stopped; otherwise, the iteration continues increasing the target damping ratio. By this way, a structural response IDR is also taken into consideration using a snap-back test. In this study, the effects of the selection of upper limit for added dampers, the storey mass distribution and the storey stiffness distribution are all investigated in terms of damper distributions, cost function, added damping ratio and IDRs for 6-storey shear building models. The results of the proposed method are compared with two existing methods in the literature. Optimal designs are also compared with uniform designs according to both IDRs and added damping ratios. The numerical results show that the proposed damper optimization method is easy to apply and is efficient to find optimal damper distribution for a target damping ratio and allowable IDR value.

Multicriteria shape design of a sheet contour in stamping

  • Oujebbour, Fatima-Zahra;Habbal, Abderrahmane;Ellaia, Rachid;Zhao, Ziheng
    • Journal of Computational Design and Engineering
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    • 제1권3호
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    • pp.187-193
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    • 2014
  • One of the hottest challenges in automotive industry is related to weight reduction in sheet metal forming processes, in order to produce a high quality metal part with minimal material cost. Stamping is the most widely used sheet metal forming process; but its implementation comes with several fabrication flaws such as springback and failure. A global and simple approach to circumvent these unwanted process drawbacks consists in optimizing the initial blank shape with innovative methods. The aim of this paper is to introduce an efficient methodology to deal with complex, computationally expensive multicriteria optimization problems. Our approach is based on the combination of methods to capture the Pareto Front, approximate criteria (to save computational costs) and global optimizers. To illustrate the efficiency, we consider the stamping of an industrial workpiece as test-case. Our approach is applied to the springback and failure criteria. To optimize these two criteria, a global optimization algorithm was chosen. It is the Simulated Annealing algorithm hybridized with the Simultaneous Perturbation Stochastic Approximation in order to gain in time and in precision. The multicriteria problems amounts to the capture of the Pareto Front associated to the two criteria. Normal Boundary Intersection and Normalized Normal Constraint Method are considered for generating a set of Pareto-optimal solutions with the characteristic of uniform distribution of front points. The computational results are compared to those obtained with the well-known Non-dominated Sorting Genetic Algorithm II. The results show that our proposed approach is efficient to deal with the multicriteria shape optimization of highly non-linear mechanical systems.

Application of LATE-PCR to Detect Candida and Aspergillus Fungal Pathogens by a DNA Hybridization Assay

  • Gopal, Dhayaalini Bala;Lim, Chua Ang;Khaithir, Tzar Mohd Nizam;Santhanam, Jacinta
    • 한국미생물·생명공학회지
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    • 제45권4호
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    • pp.358-364
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    • 2017
  • Asymmetric PCR preferentially amplifies one DNA strand for use in DNA hybridization studies. Linear-After-The-Exponential-PCR (LATE-PCR) is an advanced asymmetric PCR method which uses innovatively designed primers at different concentrations. This study aimed to optimise LATE-PCR parameters to produce single-stranded DNA of Candida spp. and Aspergillus spp. for detection via probe hybridisation. The internal transcribed spacer (ITS) region was used to design limiting primer and excess primer for LATE-PCR. Primer annealing and melting temperature, difference of melting temperature between limiting and excess primer and concentration of primers were optimized. In order to confirm the presence of single-stranded DNA, the LATE-PCR product was hybridised with digoxigenin labeled complementary oligonucleotide probe specific for each fungal genus and detected using anti-digoxigenin antibody by dot blotting. Important parameters that determine the production of single-stranded DNA in a LATE-PCR reaction are difference of melting temperature between the limiting and excess primer of at least $5^{\circ}C$ and primer concentration ratio of excess primer to limiting primer at 20:1. LATE-PCR products of Candida albicans, Candida parapsilosis, Candida tropicalis and Aspergillus terreus at up to 1:100 dilution and after 1 h hybridization time, successfully hybridised to respective oligonucleotide probes with no cross reactivity observed between each fungal genus probe and non-target products. For Aspergillus fumigatus, LATE-PCR products were detected at 1:10 dilution and after overnight hybridisation. These results indicate high detection sensitivity for single-stranded DNA produced by LATE-PCR. In conclusion, this advancement of PCR may be utilised to detect fungal pathogens which can aid the diagnosis of invasive fungal disease.

선형열처리를 이용한 Si(100)/Si$_3$N$_4$∥Si (100) 기판쌍의 직접접합 (Direct bonding of Si(100)/Si$_3$N$_4$∥Si (100) wafers using fast linear annealing method)

  • 이영민;송오성;이상연
    • 한국재료학회지
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    • 제11권5호
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    • pp.427-430
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    • 2001
  • 절연 특성이 기존의 SiO$_2$ 보다 우수한 500 두께의 SiN$_4$층을 두 단결정 실리콘사이의 절연막질로 채택하고 직접접합시켜 직경 10cm의 Si(100) /500 -Si$_3$N$_4$/Si (100) 기판쌍을 제조하였다. p-type (100) 실리콘기판을 친수성, 소수성을 갖도록 습식방법으로 세척한 두 그룹의 시편들을 준비하였다. 기판전면에 LPCVD로 500 $\AA$ 두께의 Si$_3$N$_4$∥Si(100) 기판을 성장시키고 실리론 기판과 고청정상태에서 가접시킨 후, 선형열원의 이동속도를 0.1mm/s로 고정시키고 선형 입열량을 400~1125w 범위에서 변화시키면서 직접접합을 실시하였다. 접합된 기판은 적외선 카메라로 계면 접합면적을 확인하고 razor blade creek opening 측정법으로 세정 방법에 따른 각 기판쌍 그들의 접합강도를 확인하였다. 접합강도가 측정된 기판쌍은 high resolution transmission electron microscopy (HRTEM )을 사용하여 수직단면 미세구조를 조사하였다. 입열량의 증가에 따라 두 그를 모두 접합율은 큰 유의차 없이 765% 정도로, 소수성 처리가 된 기판쌍의 접합강도는 1577mJ/$m^2$가지 선형적으로 증가하였으나, 친수성 처리가 된 기판쌍은 주어진 실험 범위에서 입열량의 증가에 따라 큰 변화 없이 2000mj/$m^2$이상의 접합 강도를 보였다 친수성 처리가 된 기판쌍의 수직단면 미세구조를 고분해능 투과전자현미경으로 각인한 결과 모든 시편의 실리콘과 Si$_3$N$_4$사이에 25 $\AA$ 정도의 SiO$_2$ 자연산화막이 존재하여 중간충 역할을 함으로서 기판접합강도를 향상시키는 것으로 판단되었다.

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무전해 도금법으로 제조된 Co(Re,P) capping layer제조 및 특성 평가 (Synthesis and Characterization of The Electrolessly Deposited Co(Re,P) Film for Cu Capping Layer)

  • 한원규;김소진;주정운;조진기;김재홍;염승진;곽노정;김진웅;강성군
    • 한국재료학회지
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    • 제19권2호
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    • pp.61-67
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    • 2009
  • Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.