• Title/Summary/Keyword: Limiting Amplifier

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Development of an Inductive Position Sensor Using Magnetic Bearing Technology (자기 베어링 기술을 이용한 유도형 변위센서 개발)

  • 노명규;박병철;노승국;경진호;박종권
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.4
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    • pp.72-78
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    • 2004
  • In this paper, a development of an inductive position sensor is described. The sensor is similar to a radial magnetic bearing in that the sensor stator is shaped like a heteropolar magnetic bearing and is driven by a switching amplifier. A demodulation filter extracts the gap information from the switching current ripples. A prototype sensor exhibits the resolution of $0.43\mum$ and the dynamic bandwidth of about 800Hz. The dynamic performance can be improved by increasing the switching frequency. However, the eddy current effects become noticeable at high switching frequency, thus limiting the improvement of the bandwidth.

The Three-Stage Operational Amplifier Design for High Speed Signal Processing (고속 신호처리를 위한 3-Stage 연산증폭기 설계)

  • Kim, D.Y.;Jo, S.I.;Kim, S.;Bang, J.H.
    • Proceedings of the KIEE Conference
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    • 1990.07a
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    • pp.521-524
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    • 1990
  • There is an increasing interest in high-speed signal processing in modern telecommunication and consumer electronics applications. HDTV, ISDN. A limiting factor in Op-Amp based analog integrated circuits is the limited useful frequency range. This research program will develop a new CMOS Op-Amp architecture with improved gainband width product. The new design CMOS Op-Amp will achieve up to 100MHz unity gainband width with a 1.5-micron design rule.

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A 5-Gb/s CMOS Optical Receiver with Regulated-Cascode Input Stage for 1.2V Supply (1.2V 전원전압용 RGC 입력단을 갖는 5-Gb/s CMOS 광 수신기)

  • Tak, Ji-Young;Kim, Hye-Won;Shin, Ji-Hye;Lee, Jin-Ju;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.3
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    • pp.15-20
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    • 2012
  • This paper presents a 5-Gb/s optical receiver circuit realized in a $0.13-{\mu}m$ CMOS technologies for the applications of high-speed digital interface. Exploiting modified RGC input stage at the front-end transimpedance amplifier, interleaving active feedback and source degeneration techniques at the limiting amplifier, the proposed optical receiver chip demonstrates the measured results of $72-dB{\Omega}$ transimpedance gain, 4.7-GHz bandwidth, and $400-mV_{pp}$differential output voltage swings up to the data rate of 5-Gb/s. Also, the chip dissipates 66mW in total from a single 1.2-V supply, and occupies the area of $1.6{\times}0.8mm^2$.

A $0.18{\mu}m$ CMOS 3.2-Gb/s 4-PAM Serial Link Receiver Using Current Mode Signaling (Current Mode Signaling 방법을 이용한 $0.18{\mu}m$ CMOS 3.2-Gb/s 4-PAM Serial Link Receiver)

  • Lee, Jeong-Jun;Jeong, Ji-Kyung;Burm, Jin-Wook;Jeong, Young-Han
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.10
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    • pp.79-85
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    • 2009
  • The design of a 3.2 Gb/s serial link receiver in $0.18{\mu}m$ CMOS process is presented. The major factors limiting the performance of high-speed links are transmission channel bandwidth, timing uncertainty. The design uses a multi-level signaling(4-PAM) to overcome these problems. Moreover, to increase data bit-rate and lower BER, we designed this circuit by using a current mode amplifier, Current-mode Logic(CML) sampling latches. The 4-PAM receiver achieves 3.2 Gb/s and BER is less than $1.0\;{\times}\;10^{-12}$. The $0.5\;{\times}\;0.6\;mm^2$ chip consumes 49 mA at 3.2 Gb/s from a 1.8-V supply.

Design of Optical Receiver Using Independent-Gate-Mode Double-Gate MOSFETs (Independent-Gate-Mode Double-Gate MOSFET을 이용한 Optical Receiver 설계)

  • Kim, Yu-Jin;Jeong, Na-Rae;Park, Sung-Min;Shin, Hyung-Soon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.8
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    • pp.13-22
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    • 2010
  • Independent-Gate-Mode Double-Gate(IGM-DG) MOSFET overcomes the limitation of bulk-MOSFET's channel controllability and enables to control the front and back-gate voltages independently. Therefore, circuit designs utilizing the IGM-DG MOSFETs provide the advantage of setting 4-terminal freely, hence achieving not only the performance improvement but also the larger scale integration. This paper presents a 15Gb/s optical receiver with a 1.0V power supply voltage, which consists of a transimpedance amplifier (TIA), a feedforward limiting amplifier (LA), and an output buffer. HSPICE simulations were conducted to confirm the circuit performance, and also to verify the circuit stability issues which may occur from the variations of process and supply voltage.

Proposal and Implementation of 2-D OCDMA System with Reconfigurable Array Encoder/Decoder and Double Hard Limiters (배열형 가변 부호기/복호기와 이중 하드 리미터를 적용한 2-D OCDMA시스템 제안 및 구현)

  • 김진석;김범주;권순영;박종대
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.7A
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    • pp.705-711
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    • 2004
  • We propose novel OCDMA system with the structure of reconfigurable may encoder/decoder(RAE/ RAD), which are able to reallocate the 2-D optical codes to each subscriber and recover the transmitted data at all the receiving nodes. We have first implemented the double hard limiters composed of limiting amplifier(first hard limiter) that maintain a level of the encoded data from receiving node and AND detector(second hard limiter) for detecting the position of the encoded data and recovering the data. With the proposed system, it was successfully implemented to recover a specific channel data out of 16 code-multiplxed channels using FPGA and 4 DFB-LDs having distinct wavelengths. From experimental results, the code length resulted from increasing the number of the simultaneously connected channels has been reduced by using 2-D OCDMA multiplexed in time and wavelength instead of 1-D OCDMA. In addition, bit errors phenomenon on account of deterioration of autocorrelation peak-to-side lobe ratio is enhanced by using the double hard limiters composed of AND detector and limiting amplifiers.

A 1.5 Gbps Transceiver Chipset in 0.13-μm CMOS for Serial Digital Interface

  • Lee, Kyungmin;Kim, Seung-Hoon;Park, Sung Min
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.4
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    • pp.552-560
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    • 2017
  • This paper presents a transceiver chipset realized in a $0.13-{\mu}m$ CMOS technology for serial digital interface of video data transmission, which compensates the electrical cable loss of 45 dB in maximum at 1.5 Gbps. For the purpose, the TX equips pre-emphasis in the main driver by utilizing a D-FF with clocks generated from a wide-range tuning PLL. In RX, two-stage continuous-time linear equalizers and a limiting amplifier are exploited as a front-end followed by a 1/8-rate CDR to retime the data with inherent 1:8 demultiplexing function. Measured results demonstrate data recovery from 270 Mbps to 1.5 Gbps. The TX consumes 104 mW from 1.2/3.3-V supplies and occupies the area of $1.485mm^2$, whereas the RX dissipate 133 mW from a 1.2-V supply and occupies the area of $1.44mm^2$.

The Design and Implementation of CE-OQPSK using NLF for Wideband PCS (NLF를 이용한 광대역 PCS용 CE-OQPSK의 설계 및 제작)

  • Bang, Sung-Il;Jang, Hong-Ju
    • Journal of IKEEE
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    • v.1 no.1 s.1
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    • pp.164-175
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    • 1997
  • In this paper, the CE-OQPSK that has constant envelope was designed for applying PSK to the nonlinear amplifier so as to improve power efficiency. For this realization. ROM and D/A converter that have relative low power consumption were used. As a result of comparing the PSD (Power spectrum density) of CE-OQPSK with that of conventional OQPSK through simulation for estimating the performance. In case of correlation factor ${\alpha}$ = 0.707. the improvement of bandwidth efficiency of 5% and 20% is achieved in the main lobe and the sidelobe, respectively. And, in case additional bandwidth-limiting-filter is added, it can be shown that the PSD of CE-OQPSK meet the FCC wireless LAN spectrum specification.

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Physical Media Dependent Prototype for 10-Gigabit-Capable PON OLT

  • Kim, Jongdeog;Lee, Jong Jin;Lee, Seihyoung;Kim, Young-Sun
    • ETRI Journal
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    • v.35 no.2
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    • pp.245-252
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    • 2013
  • In this work, we study the physical layer solutions for 10-gigabit-capable passive optical networks (PONs), particularly for an optical link terminal (OLT) including a 10-Gbit/s electroabsorption modulated laser (EML) and a 2.5-Gbit/s burst mode receiver (BM-Rx) in a novel bidirectional optical subassembly (BOSA). As unique features, a bidirectional mini-flat package and a 9-pin TO package are developed for a 10-gigabit-capable PON OLT BOSA composed of a 1,577-nm EML and a 1,270-nm avalanche photodiode BM-Rx, including a single-chip burst mode integrated circuit that is integrated with a transimpedance and limiting amplifier. In the developed prototype, the 10-Gbit/s transmitter and 2.5-Gbit/s receiver characteristics are evaluated and compared with the physical media dependent (PMD) specifications in ITU-T G.987.2 for XG-PON1. By conducting the 10-Gbit/s downstream and 2.5-Gbit/s upstream transmission experiments, we verify that the developed 10-gigabitcapable PON PMD prototype can operate for extended network coverage of up to a 40-km fiber reach.

Implementation of Self-frequency Synchronizing Circuit using Single-sideband Up-converter and Image Rejection Mixer (단측파대 상향변환기와 이미지제거 혼합기를 이용한 자기동조회로의 구현)

  • Yeom, Seong-Hyeon;Kim, Tae-Young;Kim, Tae-Hyun;Park, Boem-June
    • Journal of the Korea Institute of Military Science and Technology
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    • v.13 no.6
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    • pp.1058-1063
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    • 2010
  • In this paper, we designed self-frequency synchronizing circuit using image rejection mixer(IRM) and single-sideband(SSB) up-converter which can effectively eliminate the image frequencies occurred in multi-channel super-heterodyne receivers and help us to match inter-channel phase. Also the self-frequency synchronizing circuit simplifies system because there need no extra devices for making intermediate frequency(IF) by creating the local signal within several nanoseconds by means of generating the same frequency of IF signal and modulating radio frequency(RF) signal. We adopt the limiting amplifier for the purpose of protecting the circuit from spurious signals which come from the front end side having wide instantaneous bandwidth characteristics and constantly injecting same level into the input local signal of IRM. The IRM we fabricated has image rejection ratio of 27dB, which is good over 7dB for foreign company's. Also, the SSB up-converter we fabricated has 1dB compression point of 18dBm, which is good over 16dB for foreign company's. And the size is compact about one-forth.