• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.222-222
• /
• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• ALGAE
• /
• v.37 no.4
• /
• pp.265-279
• /
• 2022

The primary production (PP) by phytoplankton in marine ecosystems is essential for carbon cycling and fueling food webs. Hence, estimating the PP in the territorial sea of each country is a necessary step to achieving carbon neutrality. To estimate the PP in the territorial sea of the Republic of Korea from 2005 to 2021, we analyzed various physiochemical parameters, such as sea surface temperature (SST), Secchi depth, and concentrations of chlorophyll-a and nutrients in the seas of five regions, including the East Sea, West Sea, western South Sea, eastern South Sea, and the waters off Jeju Island. During the 17-year study period, the SST tended to increase, while the nutrient concentrations declined, except in the Jeju area. Overall, the PP did not show a specific temporal trend, but daily PP in the western South Sea was the highest among the five regions. Moreover, the maximum PP in the Korean territorial waters (76,450 km²) was estimated at 11,227 Gg C y^-1, which accounts for 0.03% of the global PP. The results may give insights into a better understanding of the PP, further resource utilization, and environmental sustainability in the studied region.

• Journal of Welding and Joining
• /
• v.32 no.3
• /
• pp.27-33
• /
• 2014

This paper presents a brief summary on a relatively new plasma aided electrolytic surface treatment process for light metals. A brief discussion regarding the advantages, principle, process parameters and applications of this process is discussed. The process owes its origin to Sluginov who discovered an arc discharge phenomenon in electrolysis in 1880. A similar process was studied and developed by Markov and coworkers in 1970s who successfully deposited an oxide film on aluminium. Several investigation thereafter lead to the establishment of suitable process parameters for deposition of a crystalline oxide film of more than $100{\mu}m$ thickness on the surface of light metals such as aluminium, titanium and magnesium. This process nowadays goes by several names such as plasma electrolytic oxidation (PEO), micro-arc oxidation (MOA), anodic spark deposition (ASD) etc. Several startups and surface treatment companies have taken up the process and deployed it successfully in a range of products, from military grade rifles to common off road sprockets. However, there are certain limitations to this technology such as the formation of an outer porous oxide layer, especially in case of magnesium which displays a Piling Bedworth ratio of less than one and thus an inherent non protective oxide. This can be treated further but adds to the cost of the process. Overall, it can be said the PEO process offers a better solution than the conventional coating processes. It offers advantages considering the fact that he electrolyte used in PEO process is environmental friendly and the temperature control is not as strict as in case of other surface treatment processes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.109-109
• /
• 2010

$Er^{3+}$ ion shows a stable and efficient luminescence at 1.54mm due to its $^4I_{13/2}\;{\rightarrow}\;^4I_{15/2}$ intra-4f transition. As this corresponds to the low-loss window of silica-based optical fibers, Er-based light sources have become a mainstay of the long-distance telecom. In most telecom applications, $Er^{3+}$ ions are excited via resonant optical pumping. However, if nanocluster-Si (nc-Si) are co-doped with $Er^{3+}$, $Er^{3+}$ can be excited via energy transfer from excited electrical carriers in the nc-Si as well. This combines the broad, strong absorption band of nc-Si with narrow, stable emission spectra of $Er^{3+}$ to allow top-pumping with off-resonant, low-cost broadband light sources as well as electrical pumping. A widely used method to achieve nc-Si sensitization of $Er^{3+}$ is high-temperature annealing of Er-doped, non-stoichiometric amorphous thin film with excess Si (e.g.,silicon-rich silicon oxide(SRSO)) to precipitate nc-Si and optically activate $Er^{3+}$ at the same time. Unfortunately, such precipitation and growth of nc-Si into Er-doped oxide matrix can lead to $Er^{3+}$ clustering away from nc-Si at anneal temperatures much lower than ${\sim}1000^{\circ}C$ that is necessary for full optical activation of $Er^{3+}$ in $SiO_2$. Recently, silicon-rich silicon nitride (SRSN) was reported to be a promising alternative to SRSO that can overcome this problem of Er clustering. But as nc-Si formation and optical activation $Er^{3+}$ remain linked in Er-doped SRSN, it is not clear which mechanism is responsible for the observed improvement. In this paper, we report on investigating the effect of separating the nc-Si formation and $Er^{3+}$ activation by using hetero-multilayers that consist of nm-thin SRSO or SRSN sensitizing layers with Er-doped $SiO_2$ or $Si_3N_4$ luminescing layers.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.31 no.1
• /
• pp.9-15
• /
• 1986

To establish an efficient light control method using three covering materials on tunnel shaped rice seed-bed at greening stage after seedling emergence, four rice cultivars, Nampungbyeo, Taebaegbyeo, Seonambyeo, and Seomjinbyeo were sown on 15 April and 10 May in 1983 and 1984 respectively. After seedling emergence by a simplified emerging methods the seedling boxes were moved onto tunnel shaped seed-bed which was covered with combined matrials of PE film, silverpoly sheet, and spunbonded polyester fabric. For machine transplanting of rice seedlings in cases of early season and optimum season seeding in central part of Korea, PE film tunnel with silverpoly mulched, and PE film tunnel methods with spunbonded polyester fabric mulched reduced injuries of non-parasitic seedling damping-off and a albinism as affected by it, protected rice seedlings from injuries by extremely low temperature in the night, and reduced less differences in diurnal temperature than those in the other covering methods. At late season seeding for double cropping system of paddy field in southern part of Korea, a single silver-poly or a single spunbonded polyester fabric-covered tunnel method showed good green seedlings, and prevent-ed extreme rising of diurnal temperature by light interception in the tunnel.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.32 no.4
• /
• pp.438-443
• /
• 1999

Germination and growth of Laminaria japonica microscopic stages were investigated under crossed gradients of temperatures and irradiances, and the results related to the seasonal temperature regime in the southeastern coast of Korea. Germination rates of $70\~86\%$ were observed in the temperature range of $5\~20^{\circ}C$, however, at $25^{\circ}C$ no germination of meiospores was observed. The primary factor affecting germination rates at the temperature range of $5\~20^{\circ}C$ was irradiance: germination was significantly reduced at $150 {\mu}E{\cdot}m^{-2}{\cdot}s^{-1}$. Vegetative cell production of female gametophytes was highest at $20^{\circ}C$, but plants were not fertile at the temperature. In the temperature range of $5\~15^{\circ}C$, higher irradiance caused females to reduce cell production, but increased fertility. Cell production was also low at lower temperatures with increased fertility rates. Optimal growth temperature for microsporophytes was $10^{\circ}C$ and their growth rates were light-saturated at $70 {\mu}E{\cdot}m^{-2}{\cdot}s^{-1}$. We have concluded that meiospores released before July could develope to the young sporophytic stage in the southeastern coast of Korea which is off the southern limit of its geographical distribution. However, limiting factor in the development of natural sporophytic population in this region would be the upper temperature limit for the survival of young sporophytes, as water temperature at this area frequently exceeds $25^{\circ}C$ during the summer period.

• Applied Chemistry for Engineering
• /
• v.31 no.3
• /
• pp.291-298
• /
• 2020

ZITO/Ag/ZITO multilayer transparent electrodes at room temperature on glass substrates were prepared using RF/DC magnetron sputtering. Transparent conductive films with a sheet resistance of 9.4 Ω/㎡ and a transmittance of 83.2% at 550 nm were obtained for the multilayer structure comprising ZITO/Ag/ZITO (100/8/42 nm). The sheet resistance and transmittance of ZITO/Ag/ZITO multilayer films meant that they would be highly applicable for use in polymer-dispersed liquid crystal (PDLC)-based smart windows due to the ability to effectively block infrared rays (heat rays) and thereby act as an energy-saving smart glass. Effects of the thickness of the PDLC layer and the intensity of ultraviolet light (UV) on electro-optical properties, photopolymerization kinetics, and morphologies of difunctional urethane acrylate-based PDLC systems were investigated using new transparent conducting electrodes. A PDLC cell photo-cured using UV at an intensity of 2.0 mW/c㎡ with a 15 ㎛-thick PDLC layer showed outstanding off-state opacity, good on-state transmittance, and favorable driving voltage. Also, the PDLC-based smart window optimized in this study formed liquid crystal droplets with a favorable microstructure, having an average size range of 2~5 ㎛ for scattering light efficiently, which could contribute to its superior final performance.

• Journal of the Korean Applied Science and Technology
• /
• v.27 no.2
• /
• pp.137-143
• /
• 2010

Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors (TFTs) based on silicon nitride ($SiN_x$)/cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with $SiN_x$/low-temperature C-PVP or $SiN_x$/conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effect mobility of $0.205\;cm^2/Vs$, a thresholdvoltage of 13.56 V and an on/off ratio of $5.73{\times}10^6$. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.454-454
• /
• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• Journal of IKEEE
• /
• v.13 no.1
• /
• pp.57-64
• /
• 2009

The optoelectrical characteristics of the ZnO nanoparticles (NPs) annealed in vacuum or oxygen condition from $200^{\circ}C$ to $600^{\circ}C$ were examined. Increased on-off ratio (or, the ratio of photocurrent to dark current) was observed when they were annealed at $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$ with the values enhanced about 4 orders compared to the as-prepared ZnO NPs in both annealing conditions, while the maximum efficiency was shown at the annealing temperature of $600^{\circ}C$ for the ZnO NPs annealed in vacuum with the value of 29.8 mA/W and at the temperature of $500^{\circ}C$ for those annealed in oxygen condition with the value of 40.3 mA/W. Photoresponse behavior of the ZnO NPs annealed in oxygen showed the sharp increase right after the ir exposure to the light followed by the slow decay and saturation during steady illumination, differing from the ZnO NPs annealed in vacuum which only exhibited the gradual increase. This difference occurred due to the curing effect of the oxygen vacancies. SEM images indicated no change in their morphologies with annealing, indicating the change in their internal structures by annealing, and most remarkably at $600^{\circ}C$. As for their photoluminescence(PL) spectra, the decrease of the deep-level(DL) emission was observed when they were annealed in oxygen at $400^{\circ}C$, and not at $200^{\circ}C$ and $600^{\circ}C$.