• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• Clean Technology
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• v.20 no.2
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• pp.97-102
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• 2014

Currently various studies are underway for dispensing high-viscosity phosphor. These studies have reported limitations and challenges in the dispensing process. The discharged amount of phosphor was approximately the same each time which is important for the implementation of high-efficiency white LED technology. This paper present high-viscosity phosphor dispensing process for white LED implementation by using electrostatic printing technology. The voltage controlled DOD (Drop-On-Demand) discharge experiment was studied to determine angle of drop meniscus at nozzle and dot diameter. With increase in Discharge voltage, the discharge angle of meniscus increased while dot diameter decreased. Therefore it can be concluded that we can control the discharge rate by controling the discharge angle of meniscus.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.79-82
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• 2009

This work presents a novel lighting technology based on a YAG:$Ce^{3+}$ phosphor converter with micro line lenticular structure, to accompany an array of bare LED chips on a board. This technology is especially effective in TFT-LCD backlight applications as it offers the advantages of high light radiation efficiency, low color deviation, uniform luminance distribution and compact backlight thickness. Additionally, the proposed configuration is low-cost, can be manufactured quickly, and can be mass-produced economically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.520-524
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• 1999

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator and display systems. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. In order to maximize even surface emission, various sieving processes are introduced. 150cd/m$^2$ luminance by various wave intensity are investigated in stable voltage and frequency.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.125-126
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• 2009

In this study, we report the room temperature synthesis and luminescence properties of white-light-emitting Rb(V,P)$O_3$. The vanadate phosphor, RbV$O_3$, was synthesized by simple mixing of $RbCO_3$ and $V_2O_5$ at room temperature in air. New direct room temperature solidstate reaction is a cost-effective method to synthesize the above luminescent materials.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.63-67
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• 2016

Divalent europium-activated $Ca_2PO_4Cl$ phosphor powders were prepared by a chemical synthetic method followed by heat treatment in reduced atmosphere, and the crystal structures, morphologies and photoluminescence properties of the powders were investigated by x-ray powder diffraction, scanning electron microscope and spectrometer. The effect of Ca/P mole ratio at the starting materials on the final products was evaluated. The optimized synthesis condition obtained in this study was Ca/P mole ratio of 2.0. The present phosphor materials had higher photoluminescence intensity and better color purity than the commercial blue phosphor powders, $(Ca,Ba,Sr)_{10}(PO_4)_6Cl_2:Eu^{2+}$. The result of excitation spectrum measurement indicated that the excitation efficiency of the synthesized powders was higher for the long-wavelength UV region than that of the commercial phosphor. It was thus concluded that the samples prepared in this study can be successfully applied for the light-emitting devices such as LED excited with long-wavelength UV light sources.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.121-126
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• 2015

A novel $Ce^{3+}$ doped $Lu_3MgAl_3SiO_{12}$ phosphor ($Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$) was successfully synthesized by a conventional solid-state reaction at $1450^{\circ}C$ for 5 h. The crystal structure of the synthesized phosphor powder was characterized by X-ray diffraction and Rietveld refinement. The prepared phosphor powder showed a broad peak at 550 nm, and the temperature dependence on photoluminescence properties of the prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor was investigated from 300 to 525 K. The activation energy for thermal quenching was determined by Arrhenius fitting. The experimental results clearly indicate that prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor has great potential for a down-conversion yellow phosphor in white light-emitting diodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.56-59
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• 2009

In the nineties the invention of the InGaN blue LED has innovated illumination technology. Currently LCD backlighting and more and more general lighting applications are based on white LEDs comprising of inorganic phosphors and blue emitting InGaN chip. Well established phosphor materials are ortho silicates and garnets like yellow emitting YAG:Ce. In our paper we demonstrate that garnet materials also allow for green light emission for both, general lighting and backlighting LED applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.676-678
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• 2004

In order to develop new yellow phosphor that emit efficiently under the 450 - 470 nm excitation range, we have synthesized a $Eu^{2+}$-activated $Sr_3SiO_5$ yellow phosphor and investigated an attempt to develop white LEDs by combining it with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the $Sr_3SiO_5$:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based $Sr_3SiO_5$:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.271-278
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• 2006

Green light emitting $Zn_2SiO_4$Mn and Al co-doped $Zn_2SiO_4$:Mn phosphor were synthesized by a sol-gel method combined with a furnace firing. The luminescent properties of the sample have been investigated. We have found that the phosphor powder with uniform shape show the maximum luminescent intensity when it is prepared with sol-gel method and fired at relatively high temperature ($1100{\sim}1300^{\circ}C$).