• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.254-258
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• 2009

We herein report on polymer phosphorescent light-emitting devices doped with iridium complex. The emitting layer of poly(N-vinylcabazole) and tris(2-phenylpyridine)iridium was fabricated by low speed dip-coating of 10, $20{\mu}m$/s. The devices showed stable current increasing leakage current at turn-on voltage. Compared to conventional spin-coating based organic light-emitting devices, the driving voltage by dip-coating observed lower values of 5.8 and 6.7 V at the luminance of 100 Cd/$cm^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1464-1466
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• 2007

We demonstrate p-doped organic light emitting diodes (OLEDs) comprising tungsten oxide ($WO_3$) and 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-4,4' diamine (NPB). We propose the NPB : $WO_3$ composition functions as a p-doping layer which significantly improves hole injection that leads to the fabrication of 4-(dicyano-methylene)-2-methyl-6-(p-dimethylaminos tyryl)-4H-pyrane (DCMl) based p-doped OLEDs with high efficiency and long lifetime.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.449-452
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• 2009

Ink-jet printed (IJP) self-aligned (SA) organic light emitting diodes (OLEDs) and its application to light emitting seal have investigated. Ink-jet printing of light emitting material is carried out onto transparent anode covered with insulating material. Laminated light emitting seal with SA IJP OLED without photo - lithographic process and any vacuum process, noncontact type electromagnetic power supply without electric power supply line, and light emitting tag with network type RF communication terminal by controlling display information were demonstrated.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.94-97
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• 2002

We report highly efficient phosphorescent-dye-doped polymeric light-emitting devices. The devices consist of a polymeric light-emitting layer comprising the phosphorescent dye, host, and matrix polymers. We patterned the phosphorescent-dye-doped polymeric layer with the LITI technique. The devices showed high efficiencies and good pattern quality to adapt to the development of full-color electroluminescent (EL) devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.178-181
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiencies due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100 %, compared to 25 % in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, Ir(ppy)$_3$ (tris(2-phenylpyridine)iridium). The devices with a structure of ITO/TPD/Ir(PPy)$_3$ doped in the host material/BCP/Alq$_3$/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of Ir(PPy)$_3$ and the host materials, we fabricated several devices and investigated the device characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1454-1456
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• 2007

The electrical and the optical properties of blue organic light-emitting devices (OLEDs) with a multiple emitting layer (EML) acting as electron and hole trapping layers were investigated. While the luminance efficiency of the OLEDs with a multiple EML was very stable, regardless of variations in the applied voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1047-1052
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• 2003

Controlling carrier transport in light emitting polymers is extremely important for their efficient use in organic opto-electronic devices [1]. Here we show that the interactions between single wall carbon nanotubes (SWNTs) and conjugated polymers can be used to modify the overall mobility of charge carriers within nanotube-polymer nanocomposites. By using a unique, double emitting-organic light emitting diodes (DE-OLEDs) structure. we have characterized the hole transport within electroluminescent nanocomposites (nanotubes in poly (m-phenylene vinylene-co-2,5-dioctoxy-p-phenylene) or PmPV). We have shown using this idea that single devices with color tunability can be fabricated. It is seen that SWNTs in PmPV are responsible for hole trapping, leading to shifts in the emission wavelengths. Our results could lead to improved organic optical amplifiers, semiconducting devices, and displays.

• Journal of Information Display
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• v.13 no.2
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• pp.91-95
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• 2012

Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.84-87
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• 2011

We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.