• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.457-457
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• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.

• Korean Journal of Environmental Agriculture
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• v.38 no.4
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• pp.225-236
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• 2019

BACKGROUND: Hydroponics is one of the methods for evaluating plant production using the inorganic nutrient solutions, which is applied under the artificial light conditions of plant factory system. However, the application of the conventional inorganic nutrients for hydroponics caused several environmental problems: waste from culture mediums and high nitrate concentration in plants. Organic nutrients are generally irrigated as a supplementary fertilizer for plant growth promotion under field or greenhouse conditions. Hydroponic culture using organic nutrients derived from the agricultural by-products such as dumped stems, leaves or immature fruits is rarely considered in plant factory system. Effect of organic or conventional inorganic nutrient solutions on the growth and nutrient absorption pattern of green and red leaf lettuces was investigated in this experiment under fluorescent lamps (FL) and mixture Light-Emitting Diodes (LEDs). METHODS AND RESULTS: Single solution of tomatoes (TJ) and kales (K) deriving from agricultural by-products including leaves or stems and its mixed solution (mixture ration 1:1) with conventional inorganic Yamazaki (Y) were supplied for hydroponics under the plant factory system. The Yamazaki solution was considered as a control. 'Jeockchima' and 'Cheongchima' lettuce seedlings (Lactuca sativa L.) were used as plant materials. The seedlings which developed 2~3 true leaves were grown under the light qualities of FL and mixed LED lights of blue plus red plus white of 1:2:1 mixture in energy ratio for 35 days. Light intensity of the light sources was controlled at 180 μmol/㎡/s on the culture bed. The single and mixture nutrient solutions of organic and/or inorganic components which controlled at 1.5 dS/m EC and 5.8 pH were regularly irrigated by the deep flow technique (DFT) system on the culture gutters. Number of unfolded leaves of the seedlings grown under the single or mixed nutrient solutions were significantly increased compared to the conventional Y treatment. Leaf extension of 'Jeockchima' under the mixture LED radiation condition was not affected by Y and YK or YTJ mixture treatments. SPAD value in 'Jeockchima' leaves exposed by FL under the YK mixture medium was approximately 45 % higher than under conventional Y treatment. Otherwise, the maximum SPAD value in the leaves of 'Cheongchima' seedlings was shown in YK treatment under the mixture LED lights. NO₃-N contents in Y treatment treated with inorganic nutrient at the end of the experiment were up to 75% declined rather than increased over 60 % in the K and TJ organic treatment. CONCLUSION: Growth of the seedlings was affected by the mixture treatments of the organic and inorganic solutions, although similar or lower dry weight was recorded than in the inorganic treatment Y under the plant factory system. Treatment Y containing the highest NO₃-N content among the considered nutrients influenced growth increment of the seedlings comparing to the other nutrients. However effect of the higher NO₃-N content in the seedling growth was different according to the light qualities considered in the experiment as shown in leaf expansion, pigmentation or dry weight promotion under the single or mixed nutrients.

• Korean Journal of Environmental Agriculture
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• v.37 no.4
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• pp.251-259
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• 2018

BACKGROUND: Various culture media have been used for hydroponic cultures of horticultural plants under the smart greenhouses with natural and artificial light types. Management of the culture medium for the control of medium amounts and/or necessary components absorbed by plants during the cultivation period is performed with ICT (Information and Communication Technology) and/or IoT (Internet of Things) in a smart farm system. This study was conducted to develop the cloud-based data analysis system for effective management of culture medium applying to hydroponic culture and plant growth in smart greenhouses. METHODS AND RESULTS: Conventional inorganic Yamazaki and organic media derived from agricultural byproducts such as a immature fruit, leaf, or stem were used for hydroponic culture media. Component changes of the solutions according to the growth stage were monitored and plant growth was observed. Red and green lettuce seedlings (Lactuca sativa L.) which developed 2~3 true leaves were considered as plant materials. The seedlings were hydroponically grown in the smart greenhouse with fluorescent and light-emitting diodes (LEDs) lights of $150{\mu}mol/m^2/s$ light intensity for 35 days. Growth data of the seedlings were classified and stored to develop the relational database in the virtual machine which was generated from an open stack cloud system on the base of growth parameter. Relation of the plant growth and nutrient absorption pattern of 9 inorganic components inside the media during the cultivation period was investigated. The stored data associated with component changes and growth parameters were visualized on the web through the web framework and Node JS. CONCLUSION: Time-series changes of inorganic components in the culture media were observed. The increases of the unfolded leaves or fresh weight of the seedlings were mainly dependent on the macroelements such as a $NO_3-N$, and affected by the different inorganic and organic media. Though the data analysis system was developed, actual measurement data were offered by using the user smart device, and analysis and comparison of the data were visualized graphically in time series based on the cloud database. Agricultural management in data visualization and/or plant growth can be implemented by the data analysis system under whole agricultural sites regardless of various culture environmental changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of Bio-Environment Control
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• v.28 no.2
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• pp.178-184
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• 2019

Strawberry ($Fragaria{\times}ananassa$) is one of the most important and popular fruit crops in the world, and 'Sulhyang' is one of the principal cultivars cultivated in the Republic of Korea for the domestic market. The growth and flower induction in strawberry is the process which influences directly on fruit bearing and yield of this crop. In this study, effect of benzyladenine (BA), gibberellic acid ($GA_3$), and salicylic acid (SA) on growth and flower bud induction in strawberry 'Sulhyang' was investigated. The 3-week-old runner plants, grown in 21-cell propagation trays, were potted and cultivated in growth chambers with $25^{\circ}C/15^{\circ}C$ (day/night) temperatures, 70% relative humidity (RH), and light intensity of $300{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ photosynthetic photon flux density (PPFD) provided by white light emitting diodes (LEDs). The runner plants were treated with one of three concentrations, 0 (control), 100, and $200mg{\cdot}L^{-1}$ of BA, $GA_3$, or SA solution. The chemicals were sprayed two times on leaves of runner plants at an interval of two weeks. After 9 weeks the results showed that the application of all chemicals caused reduction of root length and chlorophyll (SPAD) content as compared to the control. The lowest chlorophyll (SPAD) content was recorded in plants treated with $GA_3$. However, the treatment of $200mg{\cdot}L^{-1}$ $GA_3$ promoted leaf area, leaf fresh weight, and plant fresh weight. The greatest flower induction (85%) and number of inflorescences (4.3 inflorescences per plant) were observed in the treatment of $200mg{\cdot}L^{-1}\;SA$, followed by $100mg{\cdot}L^{-1}\;SA$. Overall, results suggest that foliar application of $GA_3$ solution could accelerate plant growth, while foliar application of SA solution could induce hastened flowering. Further studies may be needed to find out the relationship between $GA_3$ and SA solutions treated in a combination, and the molecular mechanism involved in those responses observed.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.1-10
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• 2018

Recently, there has been rapid development in the field of flexible electronic devices, such as organic light emitting diodes (OLEDs), organic solar cells and flexible sensors. Encapsulation process is added to protect the flexible electronic devices from exposure to oxygen and moisture in the air. Using numerical simulation, we investigated the effects of the encapsulation layer on mechanical stability of the silicon chip, especially the fracture performance of center crack in multi-layer package for various loading condition. The multi-layer package is categorized in two type - a wide chip model in which the chip has a large width and encapsulation layer covers only the chip, and a narrow chip model in which the chip covers both the substrate and the chip with smaller width than the substrate. In the wide chip model where the external load acts directly on the chip, the encapsulation layer with high stiffness enhanced the crack resistance of the film chip as the thickness of the encapsulation layer increased regardless of loading conditions. In contrast, the encapsulation layer with high stiffness reduced the crack resistance of the film chip in the narrow chip model for the case of external tensile strain loading. This is because the external load is transferred to the chip through the encapsulation layer and the small load acts on the chip for the weak encapsulation layer in the narrow chip model. When the bending moment acts on the narrow model, thin encapsulation layer and thick encapsulation layer show the opposite results since the neutral axis is moving toward the chip with a crack and load acting on chip decreases consequently as the thickness of encapsulation layer increases. The present study is expected to provide practical design guidance to enhance the durability and fracture performance of the silicon chip in the multilayer package with encapsulation layer.