• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제19권8호
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• pp.25-31
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• 2018

Recently, research on the development of lightweight vehicle bodies is increasing continuously as a response to fuel economy regulations. To reduce the weight of a vehicle body, a conventional steel plate has been substituted by light weight material with high specific strength and the jointing of multi-materials is generally applied. On the other hand, the customer's demand for safety and emotional quality in NVH (Noise, Vibration and Harshness) is becoming increasingly important. Therefore, a light weight with proper strength and NVH quality is needed. In the view of light weighting and NVH quality, the application of a vibration proof steel plate can be an effective solution but the formability of a sandwich panel is different with a conventional steel sheet. Therefore, careful analysis of formability is required. This study aims to characterize the formability of a sandwich high-strength steel plate. The high-strength steel plates of different thicknesses with resistance spot welding and sealer bonding were analyzed using forming limits diagram through a cup drawing test.

• Journal of Ecology and Environment
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• 제29권5호
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• pp.479-484
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• 2006

Ecophysiological parameters of non-transgenic sweetpotato (NT) and transgenic sweetpotato (SSA) plants were compared to evaluate their resistance to multiple environmental stresses. Stomatal conductance and transpiration rate in NT plants decreased markedly from Day 6 after water was withheld, whereas those values in SSA plants showed relatively higher level during this period. Osmotic potential in SSA plants was reduced more negatively as leaf water potential decreased from Day 8 after dehydration treatment, while such reduction was not shown in NT plants under water stressed condition. SSA plants showed less membrane damage than in NT plants. As water stress and high light stress, were synchronously applied to NT and SSA plants maximal photochemical efficiency of PS II ($F_v/F_m$) in NT plants markedly decreased, while that in SSA plants was maintained relatively higher level. This trend of changes in $F_v/F_m$ between SSA plants and NT plants was more conspicuous as simultaneously treated with water stress, high light and high temperature stress. These results indicate that SSA plants are more resistive than NT plants to multiple environmental stresses and the enhanced resistive characteristics in SSA plants are based on osmotic adjustment under water stress condition and tolerance of membrane.

• The Korean Journal of Ecology
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• 제3권1_2호
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• pp.31-39
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• 1980

Light energy utilization was investigated in the fallen stems of Opuntia bigelovii. Threshold time for the decreasing steady state of acid accumulation in the palisade tissue of Opuntia stems was 4 hours under 1,000 $\mu Em^{-2}sec^{-1}$ of PAR at $75^{\circ}C$, while stomatal closing throughout the stem stage was illustrated by 256.0-310.4 sec $\textrm{cm}^{-1}$ of stem diffusive resistance and 0.20g $day^{-1}$ of the water loss rate as cuticular resistance. The acid loss rate in the stems per 4 hours was related to tissue water contents and a few acid loss rate could be recognized at the water content rage of 56.4%~46.8%. Endogenous oscillation of tissue acidity due to the diurnal rhythmic phenomena depended on the tissue water content was found in the Opuntia stems with stomatal closing during the normal day/night cycle. The survival rate of 1 segment to survive 2 years old cactus was 22.7% in desert environments. Such a compensation photosynthesis which utilizes light energy and maintains the reassimilation of endogenous gases was interpreted as conceptual model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제28권5호
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• pp.344-349
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• 2015

A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• Korean Journal of Microbiology
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• 제6권4호
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• pp.122-130
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• 1968

Action of various wavelengths of visible light on ultraviolet-radiation damage to haploid yeast cells, Saccharomyces cerevisiae 23971, was studied. The results were obtained on the basis of the survival and respiration rates by pre- and post-illuminations of various wavelengths before and after U.V.-irradiations on the yeast cells. Among the wavelengths tested, 635 $m{\mu}$, 429 $m{\mu}$ and white light which caused increase of respiration in pre-treatment alone, induced less resistance to the U. V.-damage than in the control, in both pre- and U.V.-treatment. On the contrary, such wavelengths as 574 $m{\mu}$and 530 $m{\mu}$, showing a weak effect on respiration in pre-treatment increased the susceptability to U.V.-radiation. Photoinactivation was generally obtained by both pre- and post- illuminations along with U.V.-treatment. At 635 $m{\mu}$ the PI rate was the lowest and also a low PI rate was shown at 429 $m{\mu}$. But 429 $m{\mu}$, in the post-treatment of the yeast cells pre-treated by the white light and the darkness respectively, showed the highest PI rate. In both pre- and post- treatment of 574, 530 and 473 $m{\mu}$,the PI rates were high to the same degree. Post-treatments of the wavelengths on U.V.-treated yeasts incubated rather under the white light than the darkness induced lower PI rate. It is assumed that there are great differences in action even of the same wavelength, depending upon the various combination of pre- and post-treatments, and that, moreover, the action of various wavelengths of visible light on U.V.-damage on the cells are concerned with the doses and dose rates of U.V. and visible lights. These observations led to an interpretation that each wavelength of visible light might exert distinctively different effects oil U. V.-damage, mainly causing the inhibition or stimulation of enzymes in the yeast cells.

• Restorative Dentistry and Endodontics
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• 제22권1호
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• pp.35-60
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• 1997

Physical properties of composite resins such as strength, resistance to wear, discoloration, etc, depend on the degree of conversion of the resin components. The clinical behavior of restorative resins varies brand to brand. Part of this variation is associated with the filler and differences in the polymer matrix. The polymer matrix of resins may differ because the involved monomers are dissimilar and because of variation in the catalyst system. The purpose of this study was to evaluate the degree of conversion of the composite resins according to the depth of cure and light curing time. 7mm diameter cylindrical aluminum molds were filled with each of five different hybrid light curing composite resins(Z-100, Charisma, Herculite XRV, Prisma TPH, Veridonfil) on the thin resin films. The molds were 1mm, 2mm, 3mm, 4mm, and 5mm in depth to produce resin films of various heights. Each sample was given 20sec, 40sec, and 60sec illumination with a light source. The degree of conversion of carbon double bonds to single bonds in the resin films was examined by means of Fourier Transform Infrared Spectrometer. The results were obtained as follows; 1. There was difference in the degree of conversion among five light curing composite resins according to the depth of cure for 20sec, 40sec, and 60sec illumination with light source with statistical significance(P<0.05). 2. Five light curing composite resins show lower degree of conversion at surface of the resin than depth of 1mm. 3. The degree of conversion of five light curing composite resins was siginificantly reduced from the maximum for the resin film when the light passed through as little as 1mm of each composite. 4. The degree of conversion of five light curing composite resins decrease significantly at the depth of 4mm, and polymerization was not occured at the depth of 5mm except for Prisma TPH. 5. The degree of conversion of five light curing composite resins was increased with increased light curing time, and there was no significant differences in the degree of conversion above 4mm in Z-100, 3mm in Charisma, and at depth of 5mm in Herculite XRV and Veridonfil(P>0.05).

• Asian Pacific Journal of Cancer Prevention
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• 제15권24호
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• pp.10597-10601
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• 2015

Up-regulation of multidrug resistance-associated protein 1 (MRP1) is regarded as one of the main causes for multidrug resistance (MDR) of tumor cells, leading to failure of chemotherapy-based treatment for a multitude of cancers. However, whether silencing the overexpressed MRP1 is sufficient to reverse MDR has yet to be validated. This study demonstrated that RNAi-based knockdown of MRP1 reversed the increased efflux ability and MDR efficiently. Two different short haipin RNAs (shRNAs) targeting MRP1 were designed and inserted into pSilence-2.1-neo. The shRNA recombinant plasmids were transfected into cis-dichlorodiamineplatinum-resistant A549 lung (A549/DDP) cells, and then shRNA expressing cell clones were collected and maintained. Real time PCR and immunofluorescence staining for MRP1 revealed a high silent efficiency of these two shRNAs. Functionally, shRNA-expressing cells showed increased rhodamine 123 retention in A549/DDP cells, indicating reduced efflux ability of tumor cells in the absence of MRP1. Consistently, MRP1-silent cells exhibited decreased resistance to 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide (MTT) and DDP, suggesting reversal of MDR in these tumor cells. Specifically, MRP1 knockdown increased the DDP-induced apoptosis of A549/DDP cells by increased trapping of their cell cycling in the G2 stage. Taken together, this study demonstrated that RNAi-based silencing of MRP1 is sufficient to reverse MDR in tumor cells, shedding light on possible novel clinical treatment of cancers.