• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.645-650
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• 2000

this paper deals with HVDC Light(High Voltage Direct Current) system using space vector PWM(SVPWM) method. Because the system of this paper has d-q control scheme for HVDC Light system. HVDC Light system represented in this paper is capable of controlling active and reactive power independently. For this system. V-I curve and control methods are proposed. Also this paper describes the design of a digital system for applications in power converters such as those that would be used in the next generation of HVDC system. Finally HVDC system is implemented using DSP TMS320C31

• Journal of Astronomy and Space Sciences
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• v.14 no.2
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• pp.225-232
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• 1997

A total of 1088 observations (272 in B, 272 in V, 272 in R, and 272 in I) were made from January to February in 1995 at Chungbuk National University observatory(CbNUO). We constructed BVRI light curves with our data. The photometric solution of these light curves was obtained by means of the Wilson-Devinney method. Our result was compared with those by previous investigators.

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.452-456
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• 2000

A measurement unit and signal processing algorithm have been developed for predicting arterial oxygen saturation noninvasively. The measurement set-up was composed of a probe including light source and photodetector, optical signal processing section, LED driving circuit, PC interface software for data acquisition and data processing software. Light from the LED's was irradiated onto the finger nail bed and transmitted light was measured at different wavelengths. An effective baseline correction method was developed and measured data were analyzed by using various data processing methods and prediction algOlithms. For performance evaluation, a pulse oximeter simulator (Bio- Tek Instrument Inc.) was used as reference. The best performance in terms of the correlation coefficient and the standard deviation was obtained under the following conditions; when the arterial signals were computed in terms of area rather than peak-valley difference, and when the algorithm calculating by $In(I_p/I_v)/I_{avr}$ value for pulsation waveform was used. In in vivo test, prediction was improved when the developed baseline correction method was used. In addition, wavelengths of 660 nm and 940 nm provided better linearity and precision than wavelengths of 660 nm and 805 nm. 05 nm.

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1033-1038
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• 2009

Recently, Light Emitting Diode (LED) has many advantages in comparison with conventional light sources; low power consumption, long lifetime, and less environmental pollution. Therefore, the use of LED is increasing rapidly. In general, however, spherical lens is used in LED-lighting which cause many problems induces by optical aberration of spherical lens; low illumination, yellow belt, unpleasant feeling in human eye. As a solution of these problem, aspherical lens can be employed. This study reported the improvement of LED-lighting performance by adopting aspherical lens. From the commercial program, $LightTools^{TM}$, the optical problem were ensured. And then, to improve these problem, optimum aspheric form was designed using Code $V^{TM}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1038-1041
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• 2006

We report low operating voltage and long lifetime organic light-emitting diodes (OLEDs) with a vanadium oxide $(V_2O_5)-doped$ N,N'-di(1-naphthyl)- N,N'-diphenylbenzidine $({\alpha}-NPD)$ layer between indium tin oxide and ${\alpha}-NPD$. At a luminance of $1000\;cd/m^2$, $V_2O_5$ doped ${\alpha}-NPD$ device shows a operation voltage of 5.1V, while the device without $V_2O_5$ shows 5.8V. The $V_2O_5$ doped $({\alpha}-NPD)$ device also shows a longer lifetime and smaller operation voltage variation over time. It is suggested that the improved device performance can be attributed to the higher hole-injection efficiency and stability of the $V_2O_5$ doped $({\alpha}-NPD)$ layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.154-154
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• 2013

In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.76.1-76.1
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• 2014

We present near-infrared spectroscopic and photometric observations of the nova V2468 Cyg taken from 2008 March 14 till 2008 November 11 following its outburst on 2008 March 7. The JHK spectra of the nova have been taken from the Mount Abu Infrared Observatory using the Near-Infrared Imager/Spectrometer. The early spectra are dominated by strong H I lines from the Brackett and Paschen series, Fe II, O I and C I lines, typical of Fe II type novae but after 46 days from outburst there is significant reduction in the strength of the C I lines and the spectra are dominated by He I lines. The FWHM of the Pa-beta and Br-gamma lines change from 2200-2300 km s-1 to 1700-1800 km s-1 after 12 days from outburst. Three additional small amplitude outbursts are seen near 110, 185 and 240 days in the V band light curve after the discovery. The upper limit for the ejecta mass for V2468 Cyg is estimated to be $5.2{\times}10-6Msun$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.433-433
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• 2010

A microplasma current switch (MPCS) for a device operated in a current mode like organic light-emitting diodes (OLEDs), which features matrix addressability and current switching, is presented as well as its architecture and operational principle. The MPCS utilizes the intrinsic memory and conductivity of plasmas to achieve matrix addressability and current switching. We have fabricated a $100\;mm\;{\times}\;100\;mm$ MPCS panel in which its cell pitch is $1080\;{\mu}m\;{\times}\;1080\;{\mu}m$. The matrix addressability and current switching were verified. In addition, the current-voltage (I-V) characteristic of the unit cell was measured when plasmas were ignited. In principle, the scheme of the MPCS is equivalent to that of a double Langmuir probe diagnosing plasma parameters except for their relative dimensions to a plasma volume. Accordingly, the I-V characteristic was analyzed by a double Langmuir probe theory, and the plasma density and electron temperature were estimated from the I-V curve using a collisional double Langmuir probe theory.

• Journal of Electrical Engineering and Technology
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• v.5 no.1
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• pp.156-162
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• 2010

This paper describes electrical and optical characteristics of discharge developments in water under inhomogeneous fields caused by impulse voltages. Predischarge current and discharge light images were observed for different water resistivities and applied voltages between the hemispherical water tank and the needle electrode. The electrical parameters characterizing discharge developments are analyzed based on the discharge light images and voltage-current (V-I) curves, and electrical resistances derived by voltage and current waveforms. As a result, when the streamer corona is initiated at the tip of the needle electrode, the transient resistance suddenly drops and V-I curves form a 'loop'. The length of streamer propagation is increased with increasing peak value of the applied voltage, and the streamer corona extension is enlarged with increasing water resistivity. The electrical resistances before streamer corona initiation are rarely changed by different applied voltages. On the other hand, the electrical resistances after streamer corona initiation are found to be inversely proportional to the peak value of the applied voltage, and the decreasing rates for higher water resistivities are much higher than those for lower water resistivities. The time to streamer corona initiation and the time to the second current peak become shorter as the voltage increases. Finally, the calculated resistances after streamer corona initiation are almost the same trace of measured resistances, but they are smaller than the measured values.