• Title/Summary/Keyword: Lifetime of ISE

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Cross-verified Measurement of Sulfide Concentration in Anaerobic Conditions Using Spectroscopic, Electrochemical, and Mass Spectrometric Methods

  • Nakkyu Chae;Samuel Park;Sungyeol Choi
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.21 no.1
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    • pp.43-53
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    • 2023
  • Sulfide concentrations critically affect worker safety and the integrities of underground facilities, such as deep geological repositories for spent nuclear fuel. Sulfide is highly sensitive to oxygen, which can oxidize sulfide to sulfate. This can hinder precise measurement of the sulfide concentration. Hence, a literature review was conducted, which revealed that two methods are commonly used: the methylene blue and sulfide ion-selective electrode (ISE) methods. Inductively coupled plasma optical emission spectroscopy (ICP-OES) was used for comparison with the two methods. The sulfide ISE method was found to be superior as it yielded results with a higher degree of accuracy and involved fewer procedures for quantification of the sulfide concentration in solution. ICP-OES results can be distorted significantly when sulfide is present in solution owing to the formation of H2S gas in the ICP-OES nebulizer. Therefore, the ICP-OES must be used with caution when quantifying underground water to prevent any distortion in the measured results. The results also suggest important measures to avoid problems when using ICP-OES for site selection. Furthermore, the sulfide ISE method is useful in determining sulfide concentrations in the field to predict the lifetime of disposal canisters of spent nuclear fuel in deep geological repositories and other industries.

Application of Ion-Selective Electrodes to Measure Ionic Concentrations of Macronutrients in Hydroponics (수경재배 시 다량 이온 농도 측정을 위한 이온 선택성 전극의 응용)

  • Kim, Min-Su;Park, Tu-San;Cho, Seong-In
    • Journal of Biosystems Engineering
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    • v.32 no.1 s.120
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    • pp.37-43
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    • 2007
  • This study was carried out to investigate the applicability of PVC membrane-based ion-selective electrodes for macronutrients (K, Ca, and N) by measuring of potassium, calcium, nitrate ions in hydroponic nutrient solution. The capabilities of two ion-selective membranes with varying chemical compositions for each ion were evaluated in terms of sensitivity, selectivity, and lifetime to choose sensing elements suitable for measuring typical ranges of nutrient concentrations in hydroponic solutions. The selected calcium and nitrate ion-selective membranes showed effectively sensitive responses to calcium and nitrate ions with lifetimes of 25 and 15 days, respectively. The addition of a cation additive to the potassium membrane cocktail allowed its sensitivity to be increased whereas its lifetime was reduced from 30 days to 10 days.

Process and Structure Design for High Power Reverse-Conducting Gate Commutated Thyristors (RC- GCTs) (고전압 역도통 Gate Commutated Thyristor (RC-GCT) 소자의 공정 및 구조 설계)

  • Kim, Sang-Cheol;Kim, Eun-Dong;Zhang, Chang-Li;Kim, Nam-Kyun;Baek, Do-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1096-1099
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    • 2001
  • The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

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Design Consideration for Structure of 2500-4500V RC-GCT

  • Kim E. D.;Kim S. C.;Zhang C. L.;Kim N. K.;Bai J. B.;Li J. H.;Lu J. Q.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.36-38
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    • 2001
  • A basic structure of 2500V-4500V reverse-conducting GCT (RC-GCT) is given in this paper. The punch-through type (PT) is adopted for narrow N-base with high resistivity so that the fast turn-off and low on-state voltage can be achieved. The photo mask design was made upon the both turn-off performance and solution of separation between GCT and integrated freewheeling diode (FWD) part. The turn-on and turn-off characteristics for reserve-conducting gate commutated thyristors (RC-GCTs) were investigated by ISE simulation. Additionally, the local carrier lifetime control by proton irradiation was adopted so as not only to obtain the reduction of turn-off losses of GCT but also to reach a soft reverse recovering characteristics of FWD

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A Study on the Improvement of Forward Blocking Characteristics in the Static Induction Transistor (Static Induction Transistor의 순방향 블로킹 특성 개선에 관한 연구)

  • Kim, Je-Yoon;Jung, Min-Chul;Yoon, Jee-Young;Kim, Sang-Sik;Sung, Man-Young;Kang, Ey-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.292-295
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    • 2004
  • The SIT was introduced by Nishizawa. in 1972. When compared with high-voltage, power bipolar junction transistors, SITs have several advantages as power switching devices. They have a higher input impedance than do bipolar transistors and a negative temperature coefficient for the drain current that prevents thermal runaway, thus allowing the coupling of many devices in parallel to increase the current handling capability. Furthermore, the SIT is majority carrier device with a higher inherent switching speed because of the absence of minority carrier recombination, which limits the speed of bipolar transistors. This also eliminates the stringent lifetime control requirements that are essential during the fabrication of high-speed bipolar transistors. This results in a much larger safe operating area(SOA) in comparison to bipolar transistors. In this paper, vertical SIT structures are proposed to improve their electrical characteristics including the blocking voltage. Besides, the two dimensional numerical simulations were carried out using ISE-TCAD to verify the validity of the device and examine the electrical characteristics. A trench gate region oxide power SIT device is proposed to improve forward blocking characteristics. The proposed devices have superior electrical characteristics when compared to conventional device. Consequently, the fabrication of trench oxide power SIT with superior stability and electrical characteristics is simplified.

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Benzothiazole Substituted Benzocrown Ether-Based Potassium Ion-Selective Membrane Electrodes (벤조티아졸기를 갖는 벤조크라운에테르를 전극물질로 사용한 $K^+$ 이온선택성 막전극)

  • Hong, Uk Sun;Kwon, Hye Kyong;Cha, Geun Sig;Nam, Hakhyun;Chang, Seung Hyun;Chung, Kwang Bo
    • Journal of the Korean Chemical Society
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    • v.39 no.9
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    • pp.698-704
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    • 1995
  • The ion-selective membrane fabricated with 33 wt% PVC, 66 wt% o-NPOE and 1 wt% 4'-benzothiazolylbenzo-15-crown-5 (TB15C5) as a neutral carrier exhibited an enhanced selectivity to potassium ion over sodium ion compared to those prepared with other 15-crown-5 or 18-crown-6 derivatives. The potentiometric properties (response slope, selectivity, detection limits and lifetime) of TB15C5-based ISE membranes along with those based on valinomycin, benzo-15-crown-5 (B15C5), 4'-aminobenzo-15-crouwn-5 (AB15C5), benzo-18-crown-6 (B18C6), dibenzo-18-crown-6 (DB18C6) and bis[(benzo-15-crown-5)-4'-ylmethyl]pimelate (PI-Ⅱ) ionophores were carefully examined under the same experimental conditions. The enhanced selectivity of TB15C5-based membrane to potassium is explained in terms of the effect of the benzothiazol functional group and the distribution coefficients of metal ions.

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