• 제목/요약/키워드: LiGA

검색결과 188건 처리시간 0.031초

박형 도광판의 음각, 양각 마이크로 패턴 성형성에 관한 연구 (Study on the gate cutting of light guiding plate for mobile using quenching element)

  • 황철진;김종선;민인기;김종덕;윤경환
    • Design & Manufacturing
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    • 제2권5호
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    • pp.1-4
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    • 2008
  • LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of kernel parts of LCD unit and it consists of several optical sheets(such as prism, diffuser and protector sheets), LCP (Light Guide Plate), light source (CCFL or LED) and mold frame. The LGP of LCD-BLU is usually manufactured by forming numerous dots with $50-200{\mu}m$ in diameter on it by erosion method. But the surface of the erosion dots of LGP is very rough due to the characteristics of the erosion process during the mold fabrication, so that its light loss is high along with the dispersion of light into the surface. Accordingly, there is a limit in raising the luminance of LCD-BLU. Especially, the negative and positive micro-lens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP.

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사출성형 특성을 고려한 2인치 휴대폰용 도광판 금형제작에 관한 연구 (Effects on the process factors of blow molding affects to the PET bottle)

  • 황철진;도영수;김종선;민인기;김종덕;윤경환
    • Design & Manufacturing
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    • 제2권6호
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    • pp.1-6
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    • 2008
  • Recently, many researches have been done to improve optical performance of LCD-BLU(Back Light Unit). One of the most important parts in LCD-BLU is LGP(Light Guiding Plate). Micro-patterned LGP is known to have different optical characteristics depending on their shape, pattern density and size, etc. In the present study, a micro-optical patterned LGP mold was fabricated using LiGA process. The difference in the optical characteristics between positive and negative patterned LGP's was investigated by fixing the density, location and size of each pattern. It was found that the negative patterned LGP showed better optical characteristics than positive one.

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Improving the Thermal Stability of Ni-Silicide Using Ni-V On Boron Cluster Implantend Source/drain for Nano-Scale CMOSFETs

  • 이세광;이원재;장잉잉;종준;정순연;이가원;왕진석;이희덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.3-4
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    • 2006
  • 본 논문에서는 nano-scale CMOSFET을 위해 Boron Cluster ($B_{18}H_{22}$)가 이온주입된 SOI 와 Bulk 기판들 이용하였으며 실리사이드의 열 안정성 개선을 위해 Ni-V을 증착한 것과 순수 Ni을 증착한 것을 비교 분석 하였다. 결과 SOI위에 Ni-V을 증착한 것이 제일 낮은 면 저항을 보여주었고 반대로 Bulk위에는 제일 높은 면 저항을 보여 주었다. 단면을 측정한 결과 SOI 위에 Ni-V을 증착한 동일 조건의 Ni보다 Silicide의 두께가 두껍게 형성된 것을 확인하였다.

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Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs

  • Zhang, Ying-Ying;Lim, Sung-Kyu;Lee, Won-Jae;Zhong, Zhun;Li, Shi-Guang;Jung, Soon-Yen;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.15-16
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    • 2006
  • The thermal stability of nickel silicide with compressively and tensilely stressed nitride capping layer has been investigated in this study. The Ni (10 nm) and Ni/Co/TiN (7/3/25 nm) structures were deposited on the p-type Si substrate. The stressed capping layer was deposited using plasma enhanced chemical vapor deposition (PECVD) after silicide formation by one-step rapid thermal process (RTP) at $500^{\circ}C$ for 30 sec. It was found that the thermal stability of nickel silicide depends on the stress induced by the nitride capping layer. In the case of Ni (10 nm) structure, the high compressive sample shows the best thermal stability, whereas in the case of Ni/Co/TiN (7/3/25 nm) structure, the high compressive sample shows the worst thermal stability.

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COMS EPS PRELIMINARY DESIGN

  • Koo, Ja-Chun;Kim, Eui-Chan
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2006년도 Proceedings of ISRS 2006 PORSEC Volume I
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    • pp.220-223
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    • 2006
  • The COMS(Communication, Ocean and Meteorological Satellite) EPS(Electrical Power Subsystem) is derived from an enhanced Eurostar 3000 EPS which is fully autonomous operation in normal conditions or in the event of a failure and provides a high level of reconfiguration capability and flexibility. This paper introduces the COMS EPS preliminary design result. The COMS EPS consists of a battery, a solar array wing, a PSR(Power Supply Regulator), a PRU(Pyrotechnic Unit), a SADM(Solar Array Drive Mechanism) and relay and fuse brackets. This can offer a bus power capability of 3 kW. The solar array is made of a deployable wing with two panels. One type of solar cells is selected as GaAs/Ge triple junction cells. Li-ion battery is base lined with ten series cell module of five cells in parallel. PSR associated with battery and solar array generates a power bus fully regulated 50 V. Power bus is centralised protection and distribution by relay and fuse brackets. PRU provides power for firing actuators devices. The solar array wing is routed by the SADM under control of the AOCS(Attitude Orbit Control Subsystem). The control and monitoring of the EPS especially of the battery, is performed by the PSR in combination with on-board software.

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$(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ buffer를 사용한 $Pb(Zr_{0.52}Ti_{0.48})O_3$ 박막의 수소 후열처리 효과 (Effect of the hydrogen annealing on the $Pb(Zr_{0.52}Ti_{0.48})O_3$ film using $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ buffers)

  • 이은선;이동화;정현우;임성훈;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.191-194
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    • 2004
  • Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) 박막을 $Pt(111)/Ti/SiO_2/Si$ 기판위에 증착되었고, 수소 후열처리 후의 특성변화를 연구하였다. 동시에 10 nm의 $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ (PLT) buffer를 사용한 PZT 박막의 수소 후열처리 효과를 관찰하였다. PZT 박막의 경우, 수소 후열처리 전과 후에 강유전 특성이 현저하게 감소한 반면, PLT buffer가 사용된 PZT 박막의 경우, 강유전 특성에 거의 변화가 없었다. 이는 PLT buffer를 사용함으로써 PZT 박막의 배향성이 향상되고, 이에 따라 forming gas에 의한 수소원자가 박막 내로의 침투가 어렵게 된다. 따라서 수소원자에 대한 PZT 박막의 열화되는 현상이 buffer를 사용하는 경우, 거의 나타나지 않게 된다.

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나노급 Ge-MOSFET를 위한 Ni-N(1%)을 이용한 Ni-germanide의 열 안정성 개선 (Thermal Stability Improvement of Ni-Germanide Using Ni-N(1%) for Nano Scale Ge-MOSFET Technology)

  • 임경연;박기영;장잉잉;이세광;종준;정순연;이가원;왕진석;이희덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.17-18
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    • 2008
  • In this paper, 1%-nitrogen doped Nickel was used for improvement of thermal stability of Ni-Germanide. Proposed Ni-N(1%)/TiN structure has shown better thermal stability, sheet resistance and less agglomeration characteristic than pure Ni/TiN structure. During the germanidation process, it is believed that the nitrogen atoms in the deposited nickel layer can suppress the agglomeration of Ni germanide by retarding the diffusion of Ni atoms toward silicon layer, hence improve the thermal stability of Ni-germanide.

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Ge-MOSFETs을 위한 Ni-Co 합금을 이용한 Ni-germanide의 열안정성 개선 (Thermal Stability Improvement of Ni-germanide using Ni-Co alloy for Ge-MOSFETs Technology)

  • 박기영;정순연;장잉이;한인식;이세광;종준;신홍식;김영철;김재준;이가원;왕진석;이희덕
    • 한국전기전자재료학회논문지
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    • 제21권8호
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    • pp.733-737
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    • 2008
  • In this paper, Ni-Co alloy was used to improve thermal stability of Ni Germanide. It was found that uniform germanide is obtained on epitaxial Ge-on-Si substrate by employing Ni-Co alloy. Moreover, neither agglomeration nor penetration is observed during post-germanidation annealing process. The thermal stability of Ni germanide using Ni-Co alloy is improved due to the less agglomeration of Germanide. Therefore, the proposed Ni-Co alloy is promising for highly thermal immune Ni germanide for nano scale Ge-MOSFETs technology.

미세채널 전사성 향상을 위한 사출성형 공정최적화 기초연구 (A study on the process optimization of injection molding for replicability enhancement of micro channel)

  • 고영배;김종선;유재원;민인기;김종덕;윤경환;황철진
    • Design & Manufacturing
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    • 제2권1호
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    • pp.45-50
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    • 2008
  • Micro channel is to fabricate desired pattern on the polymer substrate by pressing the patterned mold against the substrate which is heated above the glass transition temperature, and it is a high throughput fabrication method for bio chip, optical microstructure, etc. due to the simultaneous large area patterning. However, the bad pattern fidelity in large area patterning is one of the obstacles to applying the hot embossing technology for mass production. In the present study, stamper of cross channel with width $100{\mu}m$ and height $50{\mu}m$ was manufactured using UV-LiGA process. Micro channel was manufactured using stamper manufactured in this study. Also replicability appliance was evaluated for micro channel and factors affected replicability were investigated using Taguchi method.

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Alternative Sample Preparation Method for Large-Area Cross-Section View Observation of Lithium Ion Battery

  • Kim, Ji-Young;Jeong, Young Woo;Cho, Hye Young;Chang, Hye Jung
    • Applied Microscopy
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    • 제47권2호
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    • pp.77-83
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    • 2017
  • Drastic development of ubiquitous devices requires more advanced batteries with high specific capacitance and high rate capability. Large-area microstructure characterization across the stacks of cathode, electrolyte and anode might reveal the origin of the instability or degradation of batteries upon cycling charge. In this study, sample preparation methods to observe the cross-section view of the electrodes for battery in SEM and several imaging tips are reviewed. For an accurate evaluation of the microstructure, ion milling which flats the surface uniformly is recommended. Pros and cons of cross-section polishing (CP) with Ar ion and focused ion beam (FIB) with Ga ion were compared. Additionally, a modified but new cross-section milling technique utilizing precision ion polishing system (PIPS) which can be an alternative method of CP is developed. This simple approach will make the researchers have more chances to prepare decent large-area cross-section electrode for batteries.