• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.341-345
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• 2003

ZnWO$_4$shows excellent frequency selectivity due to its high quality factor(Q${\times}$f) at microwave frequencies. However, in order to use ZnWO$_4$as multilayered wireless communication components, its other properties such as sintering temperature(105$0^{\circ}C$). $$\tau$_f$(-70ppm/$^{\circ}C$) and $$\varepsilon$_r$(15.5) should be modified. In present study, TiO$_2$and LiF were used to improve the microwave dielectric and sintering properties of ZnWO$_4$. TiO$_2$ additions to ZnWO$_4$changed $\tau$$_{f}$ from negative to positive value, and also increased $$\varepsilon$_r$, due to its high $$\tau$_f$(＋400ppm$^{\circ}C$) and $$\varepsilon$_r$(100). At 20 mol% TiO$_2$ addition, $$\tau$_f$was controlled to near zero ppm/$^{\circ}C$ with $$\varepsilon$_r$=19.4 and Q${\times}$ f=50000GHz. However, the sintering temperature was 110$0^{\circ}C$. LiF addition to the ZnWO$_4$＋TiO$_2$ mixture greatly reduced the sintering temperature from 110$0^{\circ}C$ to 85$0^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the $$\tau$_f$value due to its high negative $$\tau$_f$ value. Therefore, by controlling the TiO$_2$and LiF amount. temperature stable LTCC(Low Temperature Cofired Ceramics) material with low loss in the ZnWO$_4$-TiO$_2$-LiF system could be fabricated.d.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.131-134
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• 2003

[ $ZnWO_4$ ] shows excellent frequency selectivity due to its high quality factor($Q{\times}f$) at microwave frequencies. However, in order to use $ZnWO_4$ as multilayered wireless communication components, its other properties such as sintering temperature($1050^{\circ}C$), ${\tau}_f$ ($-70ppm/^{\circ}C$) and ${\varepsilon}_r(15.5)$ should be modified. In present study, $TiO_2$ and LiF were used to improve the microwave dielectric and sintering properties of $ZnWO_4$. $TiO_2$ additions to $ZnWO_4$ changed ${\tau}_f$ from negative to positive value, and also increased ${\varepsilon}_r$ due to its high ${\tau}_f$ ($+400ppm/^{\circ}C$) and ${\varepsilon}_r$(100). At 20 mol% $TiO_2$ addition, ${\tau}_f$ was controlled to near zero $ppm/^{\circ}C$ with ${\varepsilon}_r=19.4$ and $Q{\times}f=50000GHz$. However, the sintering temperature was still high to $1100^{\circ}C$. LiF addition to the $ZnWO_4+TiO_2$ mixture was greatly reduced the sintering temperature from $1100^{\circ}C$ to $850^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the ${\tau}_f$ value due to its high negative ${\tau}_f$ value. Therefore, by controlling the $TiO_2$ and LiF amount, temperature stable LTCC material in the $ZnWO_4$-TiO_2-LiF$ system could be fabricated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.541-544
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• 2002

In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.

• Journal of the Korean Electrochemical Society
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• v.10 no.4
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• pp.239-244
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• 2007

In order to investigate the effect of fluorine ion in the $Li_{1-x}FeO_2Li_xMnO_2$ (Mn/(Mn + Fe) = 0.8) cathode material, it was synthesized $Li_{1-x}FeO_{2-y}F_y-Li_xMnO_2$ (Mn/(Mn + Fe) = 0.8, $0.05{\le}y{\le}0.15$) cathode materials at $350^{\circ}C$ for 10hrs using solid-state method. $Li_{1-x}FeO_{2-y}F_y-Li_xMnO_2$ (Mn/(Mn + Fe) = 0.8, $0.0{\le}y{\le}0.1$ was composed many large needle-like particles of about $1-1.5\;{\mu}m$ and small particles of about 50-100 nm, which were distributed among the larger particles. However, $Li_{1-x}FeO_{1.85}F_{0.15}-Li_xMnO_2$ material showed slightly different particle morphology. The particles of $Li_{1-x}FeO_{1.85}F_{0.15}-Li_xMnO_2$ were suddenly increased and started to be a spherical type of particle shape. $Li/Li_{1-x}FeO_{1.9}F_{0.1}-Li_xMnO_2$ cell showed a high initial discharge capacity of 163 mAh/g and a high cycle retention rate of 95% after 50 cycles. The initial discharge capacity of $Li/Li_{1-x}FeO_{2-y}F_y-Li_xMnO_2$ ($0.05{\le}y{\le}0.15$) cells increased according to the increase of F content. However, the cycleability of this cell was very rapidly decreased when the substituted fluorine content is over 0.1. We suggested that too large amount of F ion fail to substitute into the $Li_{1-x}FeO_2-Li_xMnO_2$ structure, which resulted in the severe decline of battery performance.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.89-92
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• 2017

The performance of three-layered organic light-emitting diodes (OLEDs) was investigated using TPD hole-transport and injection layers, Teflon-AF, and the electron-injection layer of $Li_2CO_3$ and LiF. The OLEDs were manufactured in a structure of TPD/$Alq_3$/LiF, TPD/$Alq_3$/$Li_2CO_3$, and AF/$Alq_3$/LiF using low-molecular organic materials. In three different three-layered OLEDs, it was found that the device with the TPD/$Alq_3$/LiF structure shows higher performance in maximum luminance, and maximum external quantum efficiency compared to those of the device with TPD/$Alq_3$/$Li_2CO_3$ and TPD/$Alq_3$/LiF by 35% and 17%, and 193% and 133%, respectively. It is thought that the combined LiF/Al cathode contributes to a reduced work function and improves an electrical conduction mechanism due to the electron injection rather than the hole transport, which then increases a recombination rate of charge carriers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.548-551
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• 2000

Spinel phase LiF $e_{y}$M $n_{2-y}$ $O_4$samples are synthesized by calcining a LiOH.$H_2O$, Mn $O_2$and F $e_2$ $O_3$mixture at 80$0^{\circ}C$ for 36h in air. Preparing LiF $e_{y}$M $n_{2-y}$ $O_4$showed spinel phase with cubic phase. The ununiform distortion of the crystallite of the spinel LiF $e_{y}$M $n_{2-y}$ $O_4$was more stable than that of the pure. The discharge capacity of the cathode for the Li/LiF $e_{0.1}$M $n_{1.9}$ $O_4$cell at the first than that of the pure. The discharge capacity of the cathode for the Li/LiF $e_{0.1}$M $n_{1.9}$ $O_4$cell at the first cycle and at the 70th cycle was about 113 and 90mAh/g, respectively. This cell capacity was retained about 82% of the first cycle after 70th cycle. Impedance profile of this cell was more stable than that pure. The resistance, the capacitance and chemical diffusion coefficients of lithium ion showed approximately 80$\Omega$, 36133.87$\mu$F ; 1.4$\times$10$^{-8}$ c $m^2$ $s^{-1}$ , respectively. , respectively.ely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.439-440
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• 2007

To enhance the electron injection from the cathode of organic light-emitting diodes (OLEDs), We have studied characteristics of device that electron injection layer(EIL) is inserted between emissive layer and cathode. We fabricated bi-layer cathode $Li_2O$(x nm)/Al(100nm) and LiF(x nm)/Al(100nm) using LiF and $Li_2O$ as an electron injection layer. We analyzed the current efficiency, luminance efficiency, and external quantum efficiency of the device by varying the thickness of $Li_2O$ and LiF to be 0.5nm, 1nm, or 3nm. Using the EIL, we have obtained the efficiency of 7cd/A and the luminance of $20,000cd/m^2$. There is an improvement of efficiency by more than 3 times than the device without the $Li_2O$ layer.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.05a
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• pp.718-722
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• 1995

공기중에서 천이점 이후까지 산화된 지르칼로이 시편에 LiF, NaF, KF, NnCl, 그리고 LiOH 등을 흡착시켜 산화실험을 수행하였다. NaF, KF, NaCl을 흡착시킨 시편의 산화가 두드러지게 많이 됨을 확인할 수 있었다. LiF, LiOH를 흡착한 시편은 흡착하지 않은 시편과 큰 차이를 보이지 않고 산화가 진행되었다. 이는 Li의 전분이 초기에 산화막을 형성한 fresh 시편과는 달리 충분히 산화가 진행되어서 초기산화막의 존재가 없는 상태에서 흡착되었기 때문에 흡착의 효과가 거의 없는 것으로 나타났다고 사료된다. 이러한 결과를 이용하여 사용 후 핵연료의 보관시 안전성의 문제, 그리고 DUPIC 핵연료의 제작시에 이용될 수 있는 반복적 산화 환원의 방식에 적용될 수 있다.

• Journal of Radiation Protection and Research
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• v.34 no.4
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• pp.155-164
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• 2009

In this paper, we used computerized glow curve deconvolution (CGCD) software with several models for the simulation of a TL glow curve which was used for analysis. By using the general approximation plus model, parameters values of the glow curve were analyzed and compared with the other models parameters (general approximation, mixed order kinetics, general order kinetics). The LiF:Mg,Cu,Si and the LiF:Mg,Cu,P material were used for the glow curve analysis. And we based on figure of merits (FOM) which was the goodness of the fitting that was monitored through the value between analysis model and TLD materials. The ideal value of FOM is 0 which represents a perfect fit. The main glow peak makes the most effect of radiation dose assessment of TLD materials. The main peak of the LiF:Mg,Cu,Si materials has a intensity rate 80.76% of the whole TL glow intensity, and that of LiF:Mg,Cu,P materials has a intensity rate 68.07% of the whole TL glow intensity. The activation energy of LiF:Mg,Cu,Si was analyzed as 2.39 eV by result of the general approximation plus(GAP) model. In the case of mixed order kinetics (MOK), the activation energy was analyzed as 2.29 eV. The activation energy was analyzed as 2.38 eV by the general order kinetics (GOK) model. In the case of LiF:Mg,Cu,P TLD, the activation energy was analyzed as 2.39 eV by result of the GAP model. In the case of MOK, the activation energy was analyzed as 2.55 eV. The activation energy was analyzed as 2.51 eV by the GOK model. The R value means different ratio of retrapping-recombination. The R value of LiF:Mg,Cu,Si TLD main peak analyzed as $1.12\times10^{-6}$ and $\alpha$ value analyzed as $1.0\times10^{-3}$. The R of LiF:Mg,Cu,P TLD analyzed as $7.91\times10^{-4}$, the $\alpha$ value means different ratio of initial thermally trapped electron density-initial trapped electron density (include thermally disconnected trap electrons density). The $\alpha$ value was analyzed as $9.17\times10^{-1}$ which was the difference from LiF:Mg,Cu,Si TLD. The deep trap electron density of LiF:Mg,Cu,Si was higher than the deep trap electron density of LiF:Mg,Cu,P.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.201-205
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• 1994

Glasses being prepared, measurements and investigations of glass transition temperature and IR edge optical absorption have been performed for the compositions of 56ZrF4-14BaF2-6LaF3-4AlF3-(20-x)NaF-xLiF. Values for transition temperature of these glasses decrease in proportion to increasing LiF mol%(x) in the range of 0