• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.110-115
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• 1997

Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.407-407
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• 2012

본 연구에서는 p형 전도 특성을 갖는 ZnO 박막 연구를 위해 RF 마그네트론 스퍼터 법으로 Li이 1 at.% 첨가된 ZnO target을 이용하여 ZnLiO 박막을 제작하였다. ZnLiO 박막은 $500{\sim}650^{\circ}C$의 온도 구간에서 $50^{\circ}C$ 단계로 아르곤 가스와 산소의 가스 분압비를 조절하여 성장하였으며, 급속 열처리 법으로 산소분위기에서 3분간 열처리 하였다. 성장된 박막은 전자주사현미경과 x-ray 회절 분광법을 이용하여 구조적 특성을 분석하였고, Hall 효과 측정을 통하여 전기적 특성을 분석하였다. Photoluminescence (PL)법을 통하여 박막의 광학적 특성을 분석하였다. 초기 제작된 ZnLiO 박막은 산소 분위기에서의 급속 열처리과정을 통하여 결정성과 p형 전도 특성이 향상됨을 확인하였다. 이는 열처리 과정을 통해 격자 내 치환되지 못한 Li 원자가 Zn 자리로 치환됨에 따라 격자가 안정화 되며, 억셉터 농도의 증가를 통하여 p-type 전도 특성이 개선된 것으로 보여진다.

• Journal of the Korean Ceramic Society
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• v.38 no.2
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• pp.112-116
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• 2001

고상반응법에 의한 제조한 ZnGa$_2$O$_4$형광체에 Li 및 Tm 원소를 도핑함에 따른 발광특성을 조사하였다. 254nm 여기 하에서, 환원 처리된 ZnGa$_2$O$_4$형광체는 245nm에서 흡수피크와 380nm에서 발광피크를 나타내며, 이는 스피넬 구조에서 Ga$^{3+}$ 이온의 $^4$T$_2$$\longrightarrow$$^4$A$_2$천이에 기인한다. ZnGa$_2$O$_4$형광체에 있어서 Li 및 Tm을 도핑했을 경우가 도핑하지 않은 시료에 비해 발광강도 및 색순도가 개선되었으며, Li 및 Tm을 각각 0.1 mol, 0.01 mol 첨가했을 때 가장 우수한 발광강도 및 색순도 특성을 보였다.

• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.752-756
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• 2002

Green-emitting $Zn_2SiO_4:Mn$ phosphors for PDP(Plasma Display Panel) application were synthesized by colloidal seed-assisted spray pyrolysis process. The codoping with $Gd^{3+}/Li^+$, which replaces $Si^{4+}$ site in the willemite structure, was performed to improve the luminous properties of the $Zn_2SiO_4:Mn$ phosphors. The particles prepared by spray pyrolysis process using fumed silica colloidal solution had a spherical shape, small particle size, narrow size distribution, and non-aggregation characteristics. The $Gd^{3+}/Li^+$ codoping amount affected the luminous characteristics of $Zn_2SiO_4:Mn$ phosphors. The codoping with proper amounts of $Gd^{3+}/Li^+$ improved both the photoluminescence efficiency and decay time of $Zn_2SiO_4:Mn$ phosphor particles. In spray pyrolysis, the post-treatment temperature is another factor controlling the luminous performance of $Zn_2SiO_4:Mn$ phosphors. The $Zn_{1.9}SiO_4:Mn_{0.1}$ phosphor particles containing 0.1 mol% $Gd^{3+}/Li^+$ co-dopant had a 5% higher PL intensity than the commercial product and 5.7 ms decay time after post-treatment at $1,145^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.341-345
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• 2003

ZnWO$_4$shows excellent frequency selectivity due to its high quality factor(Q${\times}$f) at microwave frequencies. However, in order to use ZnWO$_4$as multilayered wireless communication components, its other properties such as sintering temperature(105$0^{\circ}C$). $$\tau$_f$(-70ppm/$^{\circ}C$) and $$\varepsilon$_r$(15.5) should be modified. In present study, TiO$_2$and LiF were used to improve the microwave dielectric and sintering properties of ZnWO$_4$. TiO$_2$ additions to ZnWO$_4$changed $\tau$$_{f}$ from negative to positive value, and also increased $$\varepsilon$_r$, due to its high $$\tau$_f$(＋400ppm$^{\circ}C$) and $$\varepsilon$_r$(100). At 20 mol% TiO$_2$ addition, $$\tau$_f$was controlled to near zero ppm/$^{\circ}C$ with $$\varepsilon$_r$=19.4 and Q${\times}$ f=50000GHz. However, the sintering temperature was 110$0^{\circ}C$. LiF addition to the ZnWO$_4$＋TiO$_2$ mixture greatly reduced the sintering temperature from 110$0^{\circ}C$ to 85$0^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the $$\tau$_f$value due to its high negative $$\tau$_f$ value. Therefore, by controlling the TiO$_2$and LiF amount. temperature stable LTCC(Low Temperature Cofired Ceramics) material with low loss in the ZnWO$_4$-TiO$_2$-LiF system could be fabricated.d.d.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.2
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• pp.142-149
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• 2005

[ $LiNiO_2$ ] was mixed with $TiO_2$ or ZnO for the preparation of a cathode. The electrochemical properties of the cathode were investigated and the effects of the addition of $TiO_2$ or ZnO were discussed. The first discharge capacity decreased as the quantity of the added $TiO_2$ or ZnO increased. It is probably due to the decrease in the area of reaction interface according to the increase in the amount of the added oxide. When 2wt.% and 5wt.% of oxides are added, the discharge capacity increased as the number of cycles increased. It is considered that this results from the increase in the area of reaction interface because the oxide is detached from the $LiNiO_2$ with the increase in the number of cycles. The 1wt.% $TiO_2$ or ZnO-added $LiNiO_2$ had a larger first charge capacity than $LiNiO_2$. This is considered to result from the deintercalation of Li ions in the Ni sites along with the Li ions in the Li sites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.131-134
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• 2003

[ $ZnWO_4$ ] shows excellent frequency selectivity due to its high quality factor($Q{\times}f$) at microwave frequencies. However, in order to use $ZnWO_4$ as multilayered wireless communication components, its other properties such as sintering temperature($1050^{\circ}C$), ${\tau}_f$ ($-70ppm/^{\circ}C$) and ${\varepsilon}_r(15.5)$ should be modified. In present study, $TiO_2$ and LiF were used to improve the microwave dielectric and sintering properties of $ZnWO_4$. $TiO_2$ additions to $ZnWO_4$ changed ${\tau}_f$ from negative to positive value, and also increased ${\varepsilon}_r$ due to its high ${\tau}_f$ ($+400ppm/^{\circ}C$) and ${\varepsilon}_r$(100). At 20 mol% $TiO_2$ addition, ${\tau}_f$ was controlled to near zero $ppm/^{\circ}C$ with ${\varepsilon}_r=19.4$ and $Q{\times}f=50000GHz$. However, the sintering temperature was still high to $1100^{\circ}C$. LiF addition to the $ZnWO_4+TiO_2$ mixture was greatly reduced the sintering temperature from $1100^{\circ}C$ to $850^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the ${\tau}_f$ value due to its high negative ${\tau}_f$ value. Therefore, by controlling the $TiO_2$ and LiF amount, temperature stable LTCC material in the $ZnWO_4$-TiO_2-LiF$ system could be fabricated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.11-14
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• 2009

Yb and Zn co-doped $LiNbO_3$ single crystal rods which had a diameter of 2 mm and a length of $15{\sim}25 mm$ were grown by micro-pulling down (${\mu}-PD$) method. The single crystals were successfully grown and had a uniform diameter and a smooth surface without crack. We realized of $LiNbO_3$ single crystals were hexagonal structure to compare with peaks of $LiNbO_3$ powder by Raman spectra. The threshold level of Zn concentration which is effective for optical damage were observed as about 1 mol% with IR transmission spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.209-209
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• 2009

Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

• Journal of the Korean Chemical Society
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• v.45 no.3
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• pp.251-255
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• 2001

The structure of the lithium zinc borate LiZnBO3 has been established by single-crystal X-ray diffraction methods. It crystallizes in the triclinic space group P1(Z=2), with unit-cell parameters - $a=5.0915(9)\AA$, $b=5.059(1)\AA$, $c=6.156(1)\AA$, $V=120.6(1)\AA3$ , $\alpha=65.81(1)^{\circ}$, $\beta=65.56(1)^{\circ}$ and $\gamma=59.77(1)^{\circ}$. The structure was determined from 704 unique reflections and refined to the final residuals R=0.039 and wR=0.056. It is characterized by an association of BO3 triangles and LiO4 and ZnO4 tetrahedra. The Li and Zn atoms are disordered around the average positions between Li1 and Li2 atoms or between Zn1 and Zn2 atoms. The disorder can be described by four half-occupied positions about Li1, Li2, Zn1 and Zn2 atoms.