• 전기화학회지
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• 제2권3호
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• pp.156-162
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• 1999

본 연구에서는 리튬전지 내 양극 재료로서 리튬-철계 산화물의 응용가능성을 모색하기 위하여 여러 제조방법에 따라 변화되는 전기화학적 특성을 고찰하고자 하였다. 철산화물에 대한 기본적인 양극 전기화학적 특성을 관찰하기 위해 철판, 철분말을 산화시켜 제작한 전극과 FeOOH 분말로 제작한 전극을 전류전위 순환실험을 실행하였다. 그 결과 철판과 FeOOH분말 전극의 경우 거의 리튬 층간의 산화-환원 반응이 일어나지 않음을 알 수 있었으며 철 분말의 산화물 전극에서는 리튬이온의 환원반응 피크는 보이나 산화반응은 거의 관찰되지 않았다. 또한 출발 물질 $FeCl_3-6H_2O,\;NaOH.\;LiOH$를 혼합하여 저온으로 가열하여 층상의 $LiFeO_2$를 합성하였으며, 출발 물질의 조성비를 바꾸어 그 영향을 조사하였다. 그 결과 NaOH의 첨가량이 증가할수록 전극의 용량과 효율은 감소하나 용량의 감소율은 작아짐을 알 수 있었다. $NaOH/FeCl_3/LiOH$의 몰 비를 2/1/7로 조성하여 합성하였을 때 가장 큰 용량을 보였으나 효율은 30회 순환 후 급격히 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.194.1-194.1
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• 2015

Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.645-651
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• 2008

To reduce noise in high frequency and distortion of signal, the composition of $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$ and $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ was developed. The composition was not solid solution, but mixtures of various phases composed of Ca, Sr, Zr, Ti and Ba oxides. The dielectric constant increased, the quality factor and the insulation resistance decreased with $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ content. The composition of $0.4(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ satisfied the electric characteristics and the temperature coefficient of dielectric constant (TCC). In addition, the glass frit and $MnO_2$ also affected the electric characteristics. From the result of the best fit simulation, $MnO_2$ 0.3 mol%, the glass frit 0.6 wt% showed the insulation resistance $906{\Omega}{\cdot}F$, the quality factor 821, and the dielectric constant 92. With the selected composition, MLCC capacitors sized $4.5{\times}3.2{\times}2.5mm$ were manufactured with 105 layered of the dielectric thickness $16{\mu}m$ using Ni inner electrode, They represented the capacitance $98{\sim}102$ nF, the quality factor 1,200 and the insulation resistance $1,500{\Omega}{\cdot}F$. Also, they had high break-down voltage with $107{\sim}115V/{\mu}m$, and satisfied the SL TCC characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.48.2-48.2
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• 2010

The effect of additives as rare-earth in dielectric materials has been studied to meet the development trend in electronics on the miniaturization with increasing the capacitance of MLCCs (multi-layered ceramic capacitors). It was reported that the addition of rare-earth oxides in dielectrics would contribute to enhance dielectric properties and high temperature stability. Especially, dysprosium and thulium are well known to the representative elements functioned as selective substitution in barium titanate with perovskite structure. The effects of these additives on microstructure and electric properties were studied. The 0.8 mol% Dy doped $BaTiO_3$ and the 1.0 mol% Tm doped $BaTiO_3$ had the highest electric properties as optimized composition, respectively. According to the increase of rare-earth contents, the growth of abnormal grains was suppressed and pyrochlore phase was formed in more than solubility limits. Furthermore, the effect of two rare-earth elements co-doped $BaTiO_3$ on the dielectric properties and insulation resistance was investigated with different concentration. The dielectric specimens with $BaTiO_3-Dy_2O_3-Tm2O_3$ system were prepared by design of experiment for improving the electric properties and sintered at $1320^{\circ}C$ for 2h in a reducing atmosphere. The dielectric properties were evaluated from -55 to $125^{\circ}C$ (at $1KHz{\pm}10%$ and $1.0{\pm}0.2V$) and the insulation resistance was examined at 16V for 2 min. The morphology and crystallinity of the specimens were determined by microstructural and phase analysis.

• 한국결정성장학회지
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• 제25권3호
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• pp.116-120
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• 2015

혼합이온 전도체인 $K_2NiF_4$-type 산화물인 $La(Ca)_2Ni(Cu)O_{4+{\delta}}$ 분말을 합성하여 결정구조 분석과 분말의 나노구조화에 따른 고체산화물 연료전지의 양극 성능을 비교 평가하였다. 이온 반경이 큰 Cu가 Ni 자리에 치환되어 Ni-O 팔면체 구조에서 c 축 방향으로 결정구조가 팽창하였으며, Ni-Cu의 Jahn-Teller 뒤틀림으로 산소이온 산화 환원 반응과 이온 전도도 특성에 영향을 주었다. 특히 나노구조의 $La(Ca)_2Ni(Cu)O_{4+{\delta}}$ 분말의 경우 표면 촉매성능이 향상되어 단위 전지 성능 향상 결과를 얻을 수 있었다. Ni-YSZ 음극 지지체에 8YSZ 전해질을 dip-coating한 후 $La(Ca)_2Ni(Cu)O_{4+{\delta}}$ 분말을 양극으로 도포하여 얻은 SOFC 단위성능 측정 결과 $800^{\circ}C$에서 $1w/cm^2$의 최대 출력 값을 얻을 수 있었다.