• Title/Summary/Keyword: Layer transfer process

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Optimization of Electrochemical Etching Parameters in Porous Silicon Layer Transfer Process for Thin Film Solar Cell (초박형 태양전지 제작에 Porous Silicon Layer Transfer기술 적용을 위한 전기화학적 실리콘 에칭 조건 최적화에 관한 연구)

  • Lee, Ju-Young;Koo, Yeon-Soo;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.1
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    • pp.23-27
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    • 2011
  • Fabrication of porous silicon(PS) double layer by electrochemical etching is the first step in process of ultrathin solar cell using PS layer transfer process. The porosity of the porous silicon layer can be controlled by regulating the formation parameters such as current density and HF concentration. PS layer is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. For electrochemical etching, highly boron doped (100) oriented monocrystalline Si substrates was used. Ths resistivity of silicon is $0.01-0.02\;{\Omega}{\cdot}cm$. The solution composition for electrochemical etching was HF (40%) : $C_2H_5OH$(99 %) : $H_2O$ = 1 : 1 : 2 (by volume). In order to fabricate porous silicon double layer, current density was switched. By switching current density from low to high level, a high-porosity layer was fabricated beneath a low-porosity layer. Etching time affects only the depth of porous silicon layer.

A Study on VPT phosphor screen formed by screen printing and thermal transfer method (스크린 인쇄법 및 열전사법에 의한 VPT 형광막의 형성연구)

  • Cho M.J.;Nam S.Y.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.593-594
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    • 2006
  • A novel thermal transfer method was developed to form the phosphor screen for VPT(Video Phone Tube). This method have advantages of simple process, clean environment, saving raw material and running-cost comparison of electrodeposition, spin coating of conventional methods. But now applying phosphor screen for thermal transfer method has been formed three layers (phosphor layer, ITO layer and thermal adhesive layer) on the PET film as substrate. This is complex process, run to waste of raw-material and require of high cost. Also ITO paste at present has been imported from Japan. To improve these problems, we have manufactured phosphor screen formed by two layers (phosphor layer and ITO layer). We have developed ITO paste that had both conductive and excellent thermal transfer abilities, made it of domestic raw-material.

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Effects of the Inlet Boundary Layer Thickness and the Boundary Layer Fence on the Heat Transfer Chracteristics in a Turbine Cascade (입구경계층 두께와 경계층 펜스가 터빈 캐스케이드내 열전달 특서에 미치는 영향)

  • Jeong, J.S.;Chung, J.T.
    • Proceedings of the KSME Conference
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    • 2001.06d
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    • pp.765-770
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    • 2001
  • The objective of the present study is to investigate the effects of the various inlet boundary layer thickness on convective heat transfer distribution in a turbine cascade endwall and blade suction surface. In addition, the proper height of the boundary layer fences for various inlet boundary layer thickness were applied to turbine cascade endwall in order to reduce the secondary flow, and to verify its influence on the heat transfer process within the turbine cascade. Convective heat transfer distributions on the experimental regions were measured by the image processing system. The results show that heat transfer coefficients on the blade suction surface were increased with an augmentation of inlet boundary layer thickness. However, in a turbine cascade endwall, magnitude of heat transfer coefficients did not change with variation of inlet boundary layer thickness. The results also present that the boundary layer fence is effective in reducing heat transfer on the suction surface. On the other hand, in the endwall region, boundary layer fence brought about the subsidiary heat transfer increment.

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Development of the Large-area Au/Pd Transfer-printing Process Applying Both the Anti-Adhesion and Adhesion Layers (접착방지막과 접착막을 동시에 적용한 대면적 Au/Pd 트랜스퍼 프린팅 공정 개발)

  • Cha, Nam-Goo
    • Korean Journal of Materials Research
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    • v.19 no.8
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    • pp.437-442
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    • 2009
  • This paper describes an improved strategy for controlling the adhesion force using both the antiadhesion and adhesion layers for a successful large-area transfer process. An MPTMS (3-mercaptopropyltrimethoxysilane) monolayer as an adhesion layer for Au/Pd thin films was deposited on Si substrates by vapor self assembly monolayer (VSAM) method. Contact angle, surface energy, film thickness, friction force, and roughness were considered for finding the optimized conditions. The sputtered Au/Pd ($\sim$17 nm) layer on the PDMS stamp without the anti-adhesion layer showed poor transfer results due to the high adhesion between sputtered Au/Pd and PDMS. In order to reduce the adhesion between Au/Pd and PDMS, an anti-adhesion monolayer was coated on the PDMS stamp using FOTS (perfluorooctyltrichlorosilane) after $O_2$ plasma treatment. The transfer process with the anti-adhesion layer gave good transfer results over a large area (20 mm $\times$ 20 mm) without pattern loss or distortion. To investigate the applied pressure effect, the PDMS stamp was sandwiched after 90$^{\circ}$ rotation on the MPTMS-coated patterned Si substrate with 1-${\mu}m$ depth. The sputtered Au/Pd was transferred onto the contact area, making square metal patterns on the top of the patterned Si structures. Applying low pressure helped to remove voids and to make conformal contact; however, high pressure yielded irregular transfer results due to PDMS stamp deformation. One of key parameters to success of this transfer process is the controllability of the adhesion force between the stamp and the target substrate. This technique offers high reliability during the transfer process, which suggests a potential building method for future functional structures.

Application of a foil transfer for CRT Screen processing

  • Ryu, Sang-Chul;Kim, Sang-Mun;Lee, Koo-Hwa;Keun, Yoon-Kyung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.864-867
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    • 2002
  • LG Electronics developed a perfect flat color display tube which was named "FLATRON" . This tube provides ergonomic performances with perfectly flat face and innovative manufacturing process. Foil transfer is a new technology for manufacturing screen layer for Flatron. Its main features include several properties of film, releasing agent, adhesive, aluminum layer, holes after bake-out and foil transfer process. It will be used innovative and cost oriented process for FLATRON for in CRT mass production..

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Theoretical Study on Snow Melting Process on Porous Pavement System by using Heat and Mass Transfer (열전달 및 물질전달을 이용한 공극 발열도로에서의 융설 해석에 대한 이론적 연구)

  • Yun, Taeyoung
    • International Journal of Highway Engineering
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    • v.17 no.5
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    • pp.1-10
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    • 2015
  • PURPOSES : A finite difference model considering snow melting process on porous asphalt pavement was derived on the basis of heat transfer and mass transfer theories. The derived model can be applied to predict the region where black-ice develops, as well as to predict temperature profile of pavement systems where a de-icing system is installed. In addition, the model can be used to determined the minimum energy required to melt the ice formed on the pavement. METHODS : The snow on the porous asphalt pavement, whose porosity must be considered in thermal analysis, is divided into several layers such as dry snow layer, saturated snow layer, water+pavement surface, pavement surface, and sublayer. The mass balance and heat balance equations are derived to describe conductive, convective, radiative, and latent transfer of heat and mass in each layer. The finite differential method is used to implement the derived equations, boundary conditions, and the testing method to determine the thermal properties are suggested for each layer. RESULTS: The finite differential equations that describe the icing and deicing on pavements are derived, and we have presented them in our work. The framework to develop a temperature-forecasting model is successfully created. CONCLUSIONS : We conclude by successfully creating framework for the finite difference model based on the heat and mass transfer theories. To complete implementation, laboratory tests required to be performed.

Current Status of Layer Transfer Process in Thin Silicon Solar Cell : a review

  • U. Gangopadhyay;K. Chakrabarty;S.K. Dhungel;Kim, Kyung-Hae;Yi, Jun-Sin;D. Majumdar;H. Saha
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.2
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    • pp.41-49
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    • 2004
  • Layer transfer process has emerged as a promising tool in the field of thin silicon solar cell technology. This process can use mono-crystalline silicon as a surface for the epitaxial growth of a thin layer of silicon. It requires some sort of surface conditioning of the substrate due to which the surface become suitable for homo-epitaxy and lift off after solar cell fabrication. The successful reuse of substrate has been reported. The use of the conditioned surface without any kind of epitaxial layer growth is also the issue to be addressed. This review paper basically describes the five most cost effective methods on which works are in progress. Several types of possible problems envisaged by different research groups are also incorporated here with necessary discussion. Work in Korea has already started in this area in collaboration IC Design and Fabrication Centre, Jadavpur University, India and that also has been mentioned.

Thermal Transfer Pixel Patterning by Using an Infrared Lamp Source for Organic LED Display (유기 발광 소자 디스플레이를 위한 적외선 램프 소스를 활용한 열 전사 픽셀 패터닝)

  • Bae, Hyeong Woo;Jang, Youngchan;An, Myungchan;Park, Gyeongtae;Lee, Donggu
    • Journal of Sensor Science and Technology
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    • v.29 no.1
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    • pp.27-32
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    • 2020
  • This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO2), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiNx) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

Transfer-free growth of graphene by Ni-C co-deposition

  • An, Sehoon;Lee, Geun-Hyuk;Song, Inseol;Jang, Seong Woo;Lim, Sang-Ho;Han, Seunghee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.109.2-109.2
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    • 2015
  • Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

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Development of Polymeric Layer for Enhancing The Adhesion of Nano-devices Fabricated by The Nanotransfer Molding Method

  • Lee, Gi-Seok;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.634-634
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    • 2013
  • Transfer molding methods have a problem that weak adhesion between nanostructures and substrates. It is important to make various nano scale applications, also the stability of nanostructure on substrate is related with device performance. We studied an effect of poly 4-vinylphenol (PVP) as the polymeric adhesion layer between organic nanowires and a Si substrate when the nanowires are transferred by liquid-bridge-mediated nanotransfer molding method (LB-nTM). Their structural stability was examined by optical microscopy, scanning electron microscopy as multiple transfer molding and washing process. Field-effect transistors were fabricated with organic semiconductor nanowires on a polymeric adhesion layer and their electrical properties showed no significant difference as the one without the adhesion layer. As a result, adhesion layer can be used in the washing process and making multi-layer nano-scale patterns.

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