• Journal of Korean Association for Spatial Structures
• /
• v.23 no.3
• /
• pp.87-94
• /
• 2023

Chloride is one of the most common threats to reinforced concrete (RC) durability. Alkaline environment of concrete makes a passive layer on the surface of reinforcement bars that prevents the bar from corrosion. However, when the chloride concentration amount at the reinforcement bar reaches a certain level, deterioration of the passive protection layer occurs, causing corrosion and ultimately reducing the structure's safety and durability. Therefore, understanding the chloride diffusion and its prediction are important to evaluate the safety and durability of RC structure. In this study, the chloride diffusion coefficient is predicted by machine learning techniques. Various machine learning techniques such as multiple linear regression, decision tree, random forest, support vector machine, artificial neural networks, extreme gradient boosting annd k-nearest neighbor were used and accuracy of there models were compared. In order to evaluate the accuracy, root mean square error (RMSE), mean square error (MSE), mean absolute error (MAE) and coefficient of determination (R2) were used as prediction performance indices. The k-fold cross-validation procedure was used to estimate the performance of machine learning models when making predictions on data not used during training. Grid search was applied to hyperparameter optimization. It has been shown from numerical simulation that ensemble learning methods such as random forest and extreme gradient boosting successfully predicted the chloride diffusion coefficient and artificial neural networks also provided accurate result.

• Journal of information and communication convergence engineering
• /
• v.4 no.4
• /
• pp.158-161
• /
• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1995.10a
• /
• pp.415-418
• /
• 1995

This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave using ultrasonic pulse-echo method. The technique determines the thickness of a thin layer in a layered medium form the amplitudes of the total reflected waves from the back side layer of interst. Thickness of a very thin layer few inch deep inside the media can be measured without using a very high frequency ultrasonic transducer over 100MHz which must be used in the conventional techniques for the precision measurement of a thin layer. The method also requires no inversion process to extract the thickness from the waveform of the reflected waves, so that it makes possible on-line measurement of the thickness of the layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.4
• /
• pp.443-447
• /
• 2004

In this study, we investigated the necessity of encapsulation layer to maximize flexibility of brittle indium-tin-oxide (ITO) on polymer substrates. And, Young's modulus (E) of encapsulation layer han a significant effect on external bending stress and the coefficient of thermal expansion (CTE) of that han a significant effect on internal thermal stress. To compare the magnitude of total mechanical stress including both bending stress and thermal stress, the mechanical stress of triple-layer structure (substrate / ITO / encapsulation layer or substrate / buffer layer / ITO) can be quantified and numerically analyzed through the farthest cracked island position. As a result, it should be noted that multi-layer structures with more elastic encapsulation material have small mechanical stress compared to that of buffer and encapsulation structure of large Young's modulus material when they were externally bent.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.5
• /
• pp.665-667
• /
• 2004

In previous studies, charged mosaic membranes having two different fixed charges in the membrane matrix indicated unique transport behavior such as preferential material transport. In this study, the composite charged mosaic membrane endurable to mechanical pressure in practical application was investigated from the same aspect of solute and solvent transport as before. Lp and ${\omega}$ estimated by taking account of active layer thickness were satisfactorily consistent with those in mosaic membrane without reinforcement. On the other hand, the reflection coefficient s indicated the negative value that suggests preferential material transport.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.2
• /
• pp.79-83
• /
• 2007

The implications of a theory of lubricated pad asperity wafer contact are traced through several fundamental areas of chemical-mechanical polishing. The hypothesized existence of a nanolubrication layer underlies a high accuracy model of polish rates. It also provides a quantitative explanation of a power law relationship between the coefficient of friction and a measure of pad surface flattening. The theory may further be useful for interpreting friction changes during polishing, and may explain why the coefficient of friction is sometimes observed to have a temperature or velocity dependence.

• IEMEK Journal of Embedded Systems and Applications
• /
• v.2 no.3
• /
• pp.129-137
• /
• 2007

MPEG-4 FGS is one of scalable video coding schemes specified In ISO/IEC 14496-2 Amendment 2, and particularly standardized as a scheme for providing fine granular quality and temporal scalabilities. In this paper, we propose a sign-bit reduction technique in embedded bit-plane coding to enhance the coding efficiency of MPEG-4 FGS system. The general structure of the FGS system for the proposed scheme is based on the standard MPEG-4 FGS system. The proposed FGS enhancement-layer encoder takes as input the difference between the original DCT coefficient and the decision level of the quantizer instead of the difference between the original DCT coefficient and its reconstruction level. By this approach, the sign information of the enhancement-layer DCT coefficients can be the same as that of the base-layer ones at the same frequency index in DCT domain. Thus, overhead bits required for coding a lot of sign information of the enhancement-layer DCT coefficients in embedded bit-plane coding can be removed from the generated bitstream. It is shown by simulations that the proposed FGS coding system provides better coding performance, compared to the MPEG-4 FGS system in terms of compression efficiency.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.518-521
• /
• 2004

The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1380-1383
• /
• 2007

The secondary electron emission coefficient (${\gamma}$) of the cathode is an important factor for improving the discharge characteristics of AC-PDP, because of its close relationship to discharge voltage. In this experiment, we have investigated the electronic structure of the energy band in the MgO layer responsible for the high ${\gamma}$. We used three kinds of MgO pellet that have another component, and each MgO layers have been deposited by electron beam evaporation method. The work-functions of MgO layer have been investigated from their ion-induced secondary electron emission coefficient (${\gamma}$), respectively, using various ions with different ionization energies in a ${\gamma}-FIB$ (Focused Ion Beam) system. We have compared work-function with ${\gamma}-FIB$ system current signal for measurement defect energy level in MgO layer. MgO-A in the three types has lowest work-function value (4.12eV) and there are two defect energy levels.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.11
• /
• pp.1672-1678
• /
• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.