• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.101-101
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• 2007

We fabricated floating gate non-volatile memory devices with Si nanocrystals embedded in $SiN_x$ layer to achieve higher trap density. The average size of Si nanocrystals embedded in $SiN_x$ layer was ranging from 3 nm to 5 nm. The MOS capacitor and MOSFET devices with Si nanocrystals embedded in $SiN_x$ layer were analyzed the charging effects as a function of Si nanocrystals size.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1268-1270
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• 1993

In this study, the characteristics of Si-$SiO_2$ interface and its degradation in short channel SONOSFET nonvolatile memory devices, fabricated by 1Mbit CMOS process($1.2{\mu}m$ design rule), with $65{\AA}$ blocking oxide layer, $205{\AA}$ nitride layer, and $30{\AA}$ tunneling oxide layer on the silicon wafer were investigated using the charge pumping method. For investigating the Si-$SiO_2$ interface characteristics before and after write/erase cycling, charge pumping current characteristics with frequencies, write/erase cycles, as a parameters, were measured. As a result, average Si-$SiO_2$ interface trap density and mean value of capture cross section were determined to be $1.203{\times}10^{11}cm^{-2}eV^{-1}\;and\;2.091{\times}10^{16}cm^2$ before write/erase cycling, respectively. After cycling, when the write/erase cycles are $10^4$, average $Si-SiO_2$ interface trap density was $1.901{\times}10^{11}cm^{-2}eV^{-1}$. Incresing write/erase cycles beyond about $10^4$, Si-$SiO_2$ interface characteristics with write/erase cycles was increased logarithmically.

• Advances in Energy Research
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• 제7권1호
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• pp.21-34
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• 2020

Energy storage devices have received a keen interest throughout the world due to high power consumption. A large number of research activities are being conducted on electrochemical double layer capacitors (EDLCs) because of their high power density and higher energy density. In the present study, an EDLC was fabricated using natural graphite based electrodes and ionic liquid (IL) based gel polymer electrolyte (GPE). The IL based GPE was prepared using the IL, 1-ethyl-3-methylimidazolium trifluoromethanesulfonate (1E3MITF) with the polymer poly(vinyl chloride) (PVC) and the salt magnesium trifluoromethanesulfonate (Mg(CF₃SO₃)₂ - MgTF). GPE was characterized by electrochemical impedance spectroscopy (EIS), DC polarization test, linear sweep voltammetry (LSV) test and cyclic voltammetry (CV) test. The maximum room temperature conductivity of the sample was 1.64 × 10^-4 Scm^-1. The electrolyte was purely an ionic conductor and the anionic contribution was prominent. Fabricated EDLC was characterized by EIS, CV and galvanostatic charge discharge (GCD) tests. CV test of the EDLC exhibits a single electrode specific capacitance of 1.44 Fg^-1 initially and GCD test gives 0.83 Fg^-1 as initial single electrode specific discharge capacitance. Moreover, a good stability was observed for prolonged cycling and the device can be used for applications with further modifications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• 한국자기학회지
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• 제17권3호
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• pp.109-113
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• 2007

CsCl 구조를 가진 VRu(001) 표면의 자기적 성질을 일반기울기근사(GGA)를 채택한 총퍼텐셜선형보강평면파(FLAPW) 에너지 띠 계산 방법을 이용하여 이론적으로 연구하였다. 이를 위해 각기 V 및 Ru 원자층으로 끝나는 두 개의 (001) 표면을 고려하였다. 계산된 머핀-틴 구 내의 다수 및 소수 전자의 수로부터 V로 끝나는 표면의 자기모멘트는 $1.71_{{\mu}_B}$로 매우 큰 값을 가졌으며, Ru로 끝나는 표면은 자성이 거의 없는 것으로 계산되었다. 이러한 자성을 계산된 스핀분극상태밀도와 스핀전하밀도와 연관지어 설명하였다.

• 한국광학회지
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• 제2권3호
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• pp.115-120
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• 1991

ZnS 완충층이 SrS : Ce, Cl 박막 EL cell의 발광휘도 및 효율에 미치는 영향을 조사하였다. ZnS 완충층을 사용한 cell과 사용하지 않은 cell의 구동전압은 각각 210V, 220V 이상이고 주파수 범위는 500 Hz-20kHz로 하였다. 측정범위 내에서 휘도는 주파수와 이동전하밀도의 곱에 비례하고, 한편 이동전하밀도는 주파수에 무관하고 구동전압에 비례한다. 결과적으로 발광효율은 주파수와 구동전압에 무관하다. 완충층을 사용하므로 활성층의 발광특성을 향상시킬 수 있으며, 발광효율은 완충층 유무에 따라 각각 0.12 lm/W, 0.06 lm/W 이다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.94-94
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• 2009

최근 실리콘 태양전지는 점점 얇아 지는 추세에 있다. 실리콘 태양전지에 있어 실리콘의 두께를 감소시키는 것은 실리콘 소모량을 줄이는데 있어 필수적인 조건이 되었다. 이에 따라 실리콘 표면의 passivation도 더욱 중요하게 여겨지고 있다. 실리콘 태양전지의 passivation막의 한 종류인 $Al_2O_3$는 다른 산화막 물질들과는 달리 negative fixed charge를 가지고 있고 charge의 양이 다른 산화막의 density보다 높아 p-type 실리콘의 경우 후면 passivation막으로 이용이 고려되고 있다. 본 연구에서는 atomic layer deposition으로 $Al_2O_3$막을 실리콘 위에 증착하여 열처리에 따른 그 특성을 비교하고 태양전지를 제작하였다. $Al_2O_3$막을 rapid thermal annealing을 통해 서로 다른 분위기에서 열처리 한 결과를 capacitance-voltage를 통해 측정하여 비교, 분석하였고 ellipsomety 분석을 통해 광학적 특성을 비교하였다. 또한 열처리 온도의 변화에 따른 $Al_2O_3$내에 charge에 변화가 있다는 것을 관찰하였다. 이러한 charge의 변화가 태양전지의 passivation에 영향을 주는지 관찰하기 위해 Quasi-steady state photoconductace를 통해 lifetime의 변화를 관찰 하였다. 이러한 실험결과로부터 열처리 분위기와 온도를 최적화 하여 태양전지 passivation 특성을 증가시킬 수 있었다.

• 한국세라믹학회지
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• 제27권1호
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• pp.79-85
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• 1990

A study on the oxidation of SiO2 sensing layer was done at 950, 1000, 105$0^{\circ}C$ under dry O2 atmosphere. The rate determining step around the oxide layer thickness, 1000$\AA$ was different with the oxidation temperature, as follows ; ⅰ) linear growth at 95$0^{\circ}C$ and ⅱ) parabolic growth at 100$0^{\circ}C$ and 105$0^{\circ}C$. The flatness of SiO2 film was observed within $\pm$1% and surface state charge density was reduced by annealing in N2 atmosphere. Finally, pH sensitivity of SiO2 film, in the range of pH 3-9, was 20mV/pH.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.