• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.2
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• pp.93-98
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• 2008

To investigate the characteristics of water droplet on the gas diffusion layer from both top-view and side-view of the flow channel, a rig test apparatus was designed and fabricated with prism attached plate. This experimental device is used to simulate the growth of single liquid water droplet and its transport process with various air flow velocity and channel height. The contact angle hysteresis and height of water droplet are measured and analyzed. It is found that droplet tends towards to be instable by decreasing channel height, increasing flow velocity or making GDL more hydrophobic. Also, the simplified force balance model matches with experimental data only in a restricted range of operating conditions and shows discrepancy as the air flow velocity and channel height increases.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.1
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• pp.53-65
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• 2012

Recently wireless intra-vehicle communication has received a great interest from the automotive industry and ultra wideband (UWB) technology is considered as one of the potential candidate for this system. Many research works have been done on the measurement and modeling of intra-vehicle communication channel. However, very little work has been reported for the performance analysis of various PHY layer methods under the intra-vehicle communication environment. This paper is to study IEEE 802.15.4a standard in intra-vehicle channel and to evaluate its performance. Channel model in chassis and engine compartment is considered for evaluation. Through simulation BER performance of system with different receiver structures is analyzed.

• KIPS Transactions on Computer and Communication Systems
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• v.2 no.9
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• pp.381-392
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• 2013

During the last decade, the multitude of advances attained in terminal computers, along with the introduction of mobile hand-held devices, and the deployment of high speed networks have led to a recent surge of interest in Quality of Service (QoS) for video applications. The main difficulty is that mobile devices experience disparate channel conditions, which results in different rates and patterns of packet loss. One way of making more efficient use of network resources in video services over wireless channels with heterogeneous characteristics to heterogeneous types of mobile device is to use a scalable video coding (SVC). An SVC divides a video stream into a base layer and a single or multiple enhancement layers. We have to ensure that the base layer of the video stream is successfully received and decoded by the subscribers, because it provides the basis for the subsequent decoding of the enhancement layer(s). At the same time, a system should be designed so that the enhancement layer(s) can be successfully decoded by as many users as possible, so that the average QoS is as high as possible. To accommodate these characteristics, we propose an efficient transmission scheme which incorporates SVC-aware dual-channel repetition to improve the perceived quality of services. We repeat the base-layer data over two channels, with different characteristics, to exploit transmission diversity. On the other hand, those channels are utilized to increase the data rate of enhancement layer data. This arrangement reduces service disruption under poor channel conditions by protecting the data that is more important to video decoding. Simulations show that our scheme safeguards the important packets and improves perceived video quality at a mobile device.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• ETRI Journal
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• v.37 no.3
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• pp.439-449
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• 2015

Human body communication (HBC) is being recognized as a new communication technology for mobile and wearable devices in a body area network (BAN). This paper presents co-channel interference experienced by HBC supporting the physical layer in the IEEE 802.15.6 BAN standard. To analyze the co-channel interference, a co-channel interference model is introduced, and space-domain and time-domain parameters representing an interference environment are generated using the co-channel interference model. A new signal-to-interference ratio (SIR) parameter depending on the peak amplitudes of the data signals causing co-channel interference is defined; co-channel interference can be easily analyzed and modelled using the newly defined SIR. The BER degradation model derived using the co-channel interference model and SIR in this paper can be effectively used to estimate the performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.23 no.1
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• pp.43-49
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• 2011

For the improvement of water quality in a harbor, several studies have been carried out on SEB (Seawater Exchange Breakwater) in recent years, but a problem has been shown whereby the water on the inside area far from the SEB cannot be easily exchanged. In order to solve the problem of the SEB, the Manifold channel, a new concept of the SEB, is introduced in this paper. By using the manifold channel, it is possible to exchange the water of the inside area for seawater from the outside. Here, to assess the outflow gates of the manifold channel governing flow behavior, a virtual manifold channel controlled the location, width and direction of outflow gates applied to the Jumunjin fishery port, where the SEB has been established. In addition, the desirable flow pattern of the port by utilizing the two layer current model is identified, and five general cases of the manifold channel are described in this paper. The model is verified by comparing with observation of the SEB model, and the results are in general agreement. From the results of the manifold channel, in the case of the Jumunjin fishery port, the small circulation of counter clockwise is necessary for the water exchange on the inside area, but it should be controlled by the outflow gates for other areas. Using the two layer current model, the desirable flow pattern of the port can be predicted, and the water exchange for the upper and lower layer can be examined. For the practical use of the manifold channel, further studies on the manifold channel will be necessary, and it may then be used broadly for the design of breakwater in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.153-153
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• 2009

We investigated the dependence of the memory margin of the Cap-less memory cell on the strain of top silicon channel layer and also compared kink effect of strained Cap-less memory cell with the conventional Cap-less memory cell. For comparison of the characteristic of the memory margin of Cap-less memory cell on the strain channel layer, Cap-less transistors were fabricated on fully depleted strained silicon-on-insulator of 0.73-% tensile strain and conventional silicon-on-insulator substrate. The thickness of channel layer was fabricated as 40 nm to obtain optimal memory margin. We obtained the enhancement of 2.12 times in the memory margin of Cap-less memory cell on strained-silicon-on-insulator substrate, compared with a conventional SOI substrate. In particular, much higher D1 current of Cap-less memory cell was observed, resulted from a higher drain conductance of 2.65 times at the kink region, induced by the 1.7 times higher electron mobility in the strain channel than the conventional Cap-less memory cell at the effective field of 0.3MV/cm. Enhancement of memory margin supports the strained Cap-less memory cell can be promising substrate structures to improve the characteristics of Cap-less memory cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.10
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• pp.5080-5097
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• 2017

Channel characteristics-based secret key generation is an effective physical-layer security method. The issues of how to remove the effect of random noise and to balance the key generation rate (KGR) and the bit mismatch rate (BMR) are needed to be addressed. In this paper, to reduce the effect of random noise and extract more secret bits, a new quantization scheme with high key generation rate and low bit mismatch rate is proposed. In our proposed scheme, we try to use all measurements and correct the differences caused by noise at the boundary regions instead of simply dropping them. We evaluate and discuss the improvements of our proposed scheme. The results show that our proposed scheme achieves lower bit mismatch rate as well as remaining high key generation rate.