• Title/Summary/Keyword: Lattice strain

검색결과 162건 처리시간 0.028초

Three-dimensional simplified slope stability analysis by hybrid-type penalty method

  • Yamaguchi, Kiyomichi;Takeuchi, Norio;Hamasaki, Eisaku
    • Geomechanics and Engineering
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    • 제15권4호
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    • pp.947-955
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    • 2018
  • In this study, we propose a three-dimensional simplified slope stability analysis using a hybrid-type penalty method (HPM). In this method, a solid element obtained by the HPM is applied to a column that divides the slope into a lattice. Therefore, it can obtain a safety factor in the same way as simplified methods on the slip surface. Furthermore, it can obtain results (displacement and strain) that cannot be obtained by conventional limit equilibrium methods such as the Hovland method. The continuity condition of displacement between adjacent columns and between elements for each depth is considered to incorporate a penalty function and the relative displacement. For a slip surface between the bottom surface and the boundary condition to express the slip of slope, we introduce a penalty function based on the Mohr-Coulomb failure criterion. To compute the state of the slip surface, an r-min method is used in the load incremental method. Using the result of the simple three-dimensional slope stability analysis, we obtain a safety factor that is the same as the conventional method. Furthermore, the movement of the slope was calculated quantitatively and qualitatively because the displacement and strain of each element are obtained.

피로 균열 성장 지연에 대한 중성자 회절 응력 분석 (Internal Stress/Strain Analysis during Fatigue Crack Growth Retardation Using Neutron Diffraction)

  • 서석호;;우완측;이수열
    • 한국재료학회지
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    • 제28권7호
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    • pp.398-404
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    • 2018
  • Fatigue crack growth retardation of 304 L stainless steel is studied using a neutron diffraction method. Three orthogonal strain components(crack growth, crack opening, and through-thickness direction) are measured in the vicinity of the crack tip along the crack propagation direction. The residual strain profiles (1) at the mid-thickness and (2) at the 1.5 mm away from the mid-thickness of the compact tension(CT) specimen are compared. Residual lattice strains at the 1.5 mm location are slightly higher than at the mid-thickness. The CT specimen is deformed in situ under applied loads, thereby providing evolution of the internal stress fields around the crack tip. A tensile overload results in an increased magnitude of the compressive residual stress field. In the crack growth retardation, it is found that the stresses are dispersed in the crack-wake region, where the highest compressive residual stresses are measured. Our neutron diffraction mapping results reveal that the dominant mechanism is by interrupting the transfer of stress concentration at the crack tip.

Study of Al-Alloy Foam Compressive Behavior Based on Instrumented Sharp Indentation Technology

  • Kim Am-Kee;Tunvir Kazi
    • Journal of Mechanical Science and Technology
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    • 제20권6호
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    • pp.819-827
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    • 2006
  • The stress-strain relation of aluminum (Al) alloy foam cell wall was evaluated by the instrumented sharp indentation method. The indentation in a few micron ranges was performed on the cell wall of Al-alloy foam having a composition or Al-3wt.%Si-2wt.%Cu-2wt.%Mg as well as its precursor (material prior to foaming). To extract the stress-stram relation in terms of yield stress ${\sigma}_y$, strain hardening exponent n and elastic modulus E, the closed-form dimensionless relationships between load-indentation depth curve and elasto-plastic property were used. The tensile properties of precursor material of Al-alloy foam were also measured independently by uni-axial tensile test. In order to verify the validity of the extracted stress-strain relation, it was compared with the results of tensile test and finite element (FE) analysis. A modified cubic-spherical lattice model was proposed to analyze the compressive behavior of the Al-alloy foam. The material parameters extracted by the instrumented nanoindentation method allowed the model to predict the compressive behavior of the Al-alloy foam accurately.

TiN피막의 경도 및 구조적 특성에 미치는 화학증착 조건의 영향 (Effects of Chemical Vapor Deposition Parameters on The Hardness and the Structural Characteristics of TiN Film)

  • 신종훈;이성래;백영현
    • 한국표면공학회지
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    • 제20권3호
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    • pp.106-117
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    • 1987
  • The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

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TEXTURE AND RELATED MICROSTRUCTURE AND SURF ACE TOPOGRAPHY OF VAPOR DEPOSITS

  • Lee, Dong-Nyung
    • 한국표면공학회지
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    • 제29권5호
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    • pp.301-313
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    • 1996
  • The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

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A MEIS Study on Ge Eppitaxial Growth on Si(001) with dynamically supplied Atomic Hydrogen

  • Ha, Yong-Ho;Kahng, Se-Jong;Kim, Se-Hun;Kuk, Young;Kim, Hyung-Kyung;Moon, Dae-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.156-157
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    • 1998
  • It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

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기계적합금화된 분산형 Al-4Mg기 합금의 피로거동 (The Fatigue Behavior of Mechanically Alloyed Al-4Mg Alloys Dispersed with Oxide Particles)

  • 편정우;조준식;권숙인;조윤성
    • 열처리공학회지
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    • 제6권4호
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    • pp.237-242
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    • 1993
  • The fatigue behaviors of mechanically alloyed Al-4Mg alloys dispersed with either $Al_2O_3$ or $MgAl_2O_4$ oxide particles were investigated. This study maily concerned with the role of coherency of dispersed particles with the matrix on the fatigue behavior of the alloys. The $MgAl_2O_4$ which has a spinel structure with the lattice parameter of exactly the twice of Al showed the habit relation with the matrix. The mechanically alloyed Al-4Mg alloys showed stable stress responses with fatigue cycles from start to failure regadless of strain amplitudes and of existence of dispersoids. The Al-4Mg alloy dispersed with $MgAl_2O_4$ showed not only the better static mechanical properties but also the better low cycle fatigue resistance than that with $Al_2O_3$, i.e., much higher plastic strain energy dissipated to failure, at low strain amplitude. However, this alloy showed inferior fatigue resistance to that dispersed with $Al_2O_3$ or that without dispersion at high strain amplitude. These results imply that $MgAl_2O_4$ may promote lowering the stacking fault energy of the alloy inherited from the coherency with the matrix so that dislocations shuttle back and forth on the same slip plane without cross slipping to other planes during fatigue at low strain amplitude resulting in long fatigue life.

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GaAs 기판표면의 Tilt각도가 InGaP 에피막의 탄성특성 및 결정질에 미치는 영향 (Role of Crystallographic Tilt Angle of GaAs Substrate Surface on Elastic Characteristics and Crystal Quality of InGaP Epilayers)

  • 이종원;이철로;김창수;오명석;임성욱
    • 마이크로전자및패키징학회지
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    • 제6권1호
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    • pp.1-10
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    • 1999
  • 본 논문에서는 평탄형 GaAs 기판과 $2^{\circ}$, $6^{\circ}$, $10^{\circ}$경사형 GaAs 기판 등 네 종류의 기판에 유기금속 기강성장장치를 이용하여 InGaP 에피막을 성장시켰고, 기판-에피막간의 격자부정합, 탄성변형, 격자굴곡, 부정합응력 등을 측정하여 기판 경사도, 즉 misorientation이 InGaP 에피막의 탄성특성에 미치는 영향에 대해 최초로 연구하였다. 또한 에피막의 x-선 반치폭과 PL강도 및 PL 반치폭, 발진파장 등을 측정하여 기판의 경사도가 에피막의 결정질에 미치는 영향에 대하여도 연구하였다. 시료 분석은 TXRD(tripple-axis x-ray diffractometer)와 저온 (11K) PL(photoluminescence)를 이용하여 수행했다. 기판 경사도 증가에 따라 Ga 원자의 흡착율이 평탄기판의 경우에 비해 상대적으로 증가하였으며, x-선 반치폭이 감소하였다. 또한 선형 탄성이론에 입각하면 격자 misfit 감소에 따라 부정합응력도 감소해야 하나, 반대로 미세하게 증가하는 현상이 관측되었으며 이는 경사기판을 사용할 때 접계면의 에피막 원자의 탄성효율이 향상되는 것에 기인함을 밝혔다. 그리고 기판의 경사도가 증가함에 따라 PL발진파장이 감소하였고, PL 강도는 증가하였으며, PL 반치폭은 감소하였다. 따라서 본 연구에서는 경사기판을 사용할 때 접계면의 탄성효율이 향상되고, InGaP 에피막의 결정질이 향상됨을 밝혔다.

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새로운 매설형 신축이음장치의 성능 평가 (Performance Evaluation of a New Buried Expansion Joint)

  • 홍성협;박상렬;좌용현
    • 한국도로학회논문집
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    • 제12권3호
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    • pp.27-35
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    • 2010
  • Asphalt Plug Joint(APJ)는 통상 무게비로 20%의 역청(bitumen)과 80%의 골재로 구성된 역청 혼합물을 이용하여 포장 사이의 신축이음부를 메꾸는 형태의 신축이음장치로, 도로 포장과 신축이음부의 매끄러운 연결을 가능케 하여 평탄성을 확보하면서 재료의 특성을 이용하여 교량 상판의 신축을 자체적으로 흡수하도록 되어 있는 매설형 신축이음장치이다. 그러나 APJ은 6-7년의 사용주기를 가지고 설계되지만 때때로 시공 후 6개월 내에 조기파손의 사례가 나타나고 있다. 이러한 조기파손은 잦은 보수 공사로 인한 교통정체 등을 유발하며 이로 인한 사회적 비용은 이음장치의 설치비용을 훨씬 상회한다. 이에 본 연구에서는 APJ의 단점을 극복할 수 있는 새로운 시스템인 Buried Folding Lattice Joint(BFLJ)을 개발하였고 시험체를 제작하여 실험을 통해 기존 시스템과 성능을 비교 분석하였다. 실험결과 APJ는 신축에 의하여 철판 양끝에서 변형이 발생하여 표면으로 확산되었다. 이 결과로 철판 끝을 따라 발생하는 아스팔트 혼합물의 변형집중으로 인한 인장균열과 접합부의 부착파괴 현상이 발생하였으며 이것이 조기파손의 원인이 된다는 것을 알 수 있었다. 반면 새로 개발된 BFLJ의 경우는 움직이는 스터드를 사용하고 고성능 재료를 사용함으로써 조인트 전체에 고른 변형을 유도하여 APJ의 변형집중의 단점을 해소할 수 있었다. 이에 새로 개발된 BFLJ는 APJ의 문제점을 극복하고 조기파손을 예방할수 있을 것이라 판단된다.

BS/Channeling을 이용한 Pt(111)/$Al_2O_3$(0001) 적층 생장 연구 (BS/channeling studies on the epitaxially grown Pt(111) films on $Al_2O_3$(0001))

  • 이종철;김신철;김효배;정광호;김긍호;최원국;송종환
    • 한국진공학회지
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    • 제7권4호
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    • pp.300-305
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    • 1998
  • rf magnetron sputtering 증착법으로 Al2O3(0001)기판위에 적층생장시킨 Pt박막의 결정성 및 이의 구조적 특성을 backscattering spectrometry(BS)/channeling, transmission electron microscopy(TEM)등을 이용해 분석하였다. $MeV^4$He ion channeling 결과, 증착시 기판의 온도가 $600^{\circ}C$, 증착된 Pt층의 두께가 3500$\AA$이었을 때 최소산란수율(channeling minimum yield)이 4%인 결정성이 우수한 Pt박막이 생장되었음을 확인하였으며, 동일한 증 착조건하에서 증착된 Pt층은 $Al_2O_3$(0001)기판위에 6중 대칭구조를 지닌(111)면방향으로 적층 생장되었으며, (111)면방향을 중심으로 대칭적인 원자배열 구조를 갖고 있는 쌍정구조를 형 성하고 있었다. 단면 TEM 분석결과에서도 격자부정합에 의한 strain을 감소시키기 위하여 형성된 쌍정을 관찰할 수 있었으며 strain이 집중되는 쌍정경계면에서 표면거칠기의 증가 또는 관찰되었다.

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