• Title/Summary/Keyword: Lattice strain

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Three-dimensional simplified slope stability analysis by hybrid-type penalty method

  • Yamaguchi, Kiyomichi;Takeuchi, Norio;Hamasaki, Eisaku
    • Geomechanics and Engineering
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    • v.15 no.4
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    • pp.947-955
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    • 2018
  • In this study, we propose a three-dimensional simplified slope stability analysis using a hybrid-type penalty method (HPM). In this method, a solid element obtained by the HPM is applied to a column that divides the slope into a lattice. Therefore, it can obtain a safety factor in the same way as simplified methods on the slip surface. Furthermore, it can obtain results (displacement and strain) that cannot be obtained by conventional limit equilibrium methods such as the Hovland method. The continuity condition of displacement between adjacent columns and between elements for each depth is considered to incorporate a penalty function and the relative displacement. For a slip surface between the bottom surface and the boundary condition to express the slip of slope, we introduce a penalty function based on the Mohr-Coulomb failure criterion. To compute the state of the slip surface, an r-min method is used in the load incremental method. Using the result of the simple three-dimensional slope stability analysis, we obtain a safety factor that is the same as the conventional method. Furthermore, the movement of the slope was calculated quantitatively and qualitatively because the displacement and strain of each element are obtained.

Internal Stress/Strain Analysis during Fatigue Crack Growth Retardation Using Neutron Diffraction (피로 균열 성장 지연에 대한 중성자 회절 응력 분석)

  • Seo, Sukho;Huang, E-Wen;Woo, Wanchuck;Lee, Soo Yeol
    • Korean Journal of Materials Research
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    • v.28 no.7
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    • pp.398-404
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    • 2018
  • Fatigue crack growth retardation of 304 L stainless steel is studied using a neutron diffraction method. Three orthogonal strain components(crack growth, crack opening, and through-thickness direction) are measured in the vicinity of the crack tip along the crack propagation direction. The residual strain profiles (1) at the mid-thickness and (2) at the 1.5 mm away from the mid-thickness of the compact tension(CT) specimen are compared. Residual lattice strains at the 1.5 mm location are slightly higher than at the mid-thickness. The CT specimen is deformed in situ under applied loads, thereby providing evolution of the internal stress fields around the crack tip. A tensile overload results in an increased magnitude of the compressive residual stress field. In the crack growth retardation, it is found that the stresses are dispersed in the crack-wake region, where the highest compressive residual stresses are measured. Our neutron diffraction mapping results reveal that the dominant mechanism is by interrupting the transfer of stress concentration at the crack tip.

Study of Al-Alloy Foam Compressive Behavior Based on Instrumented Sharp Indentation Technology

  • Kim Am-Kee;Tunvir Kazi
    • Journal of Mechanical Science and Technology
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    • v.20 no.6
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    • pp.819-827
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    • 2006
  • The stress-strain relation of aluminum (Al) alloy foam cell wall was evaluated by the instrumented sharp indentation method. The indentation in a few micron ranges was performed on the cell wall of Al-alloy foam having a composition or Al-3wt.%Si-2wt.%Cu-2wt.%Mg as well as its precursor (material prior to foaming). To extract the stress-stram relation in terms of yield stress ${\sigma}_y$, strain hardening exponent n and elastic modulus E, the closed-form dimensionless relationships between load-indentation depth curve and elasto-plastic property were used. The tensile properties of precursor material of Al-alloy foam were also measured independently by uni-axial tensile test. In order to verify the validity of the extracted stress-strain relation, it was compared with the results of tensile test and finite element (FE) analysis. A modified cubic-spherical lattice model was proposed to analyze the compressive behavior of the Al-alloy foam. The material parameters extracted by the instrumented nanoindentation method allowed the model to predict the compressive behavior of the Al-alloy foam accurately.

Effects of Chemical Vapor Deposition Parameters on The Hardness and the Structural Characteristics of TiN Film (TiN피막의 경도 및 구조적 특성에 미치는 화학증착 조건의 영향)

  • Shin, Jong-Hoon;Lee, Seong-Rae;Baek, Young-Hyun
    • Journal of the Korean institute of surface engineering
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    • v.20 no.3
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    • pp.106-117
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    • 1987
  • The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

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TEXTURE AND RELATED MICROSTRUCTURE AND SURF ACE TOPOGRAPHY OF VAPOR DEPOSITS

  • Lee, Dong-Nyung
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.301-313
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    • 1996
  • The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

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A MEIS Study on Ge Eppitaxial Growth on Si(001) with dynamically supplied Atomic Hydrogen

  • Ha, Yong-Ho;Kahng, Se-Jong;Kim, Se-Hun;Kuk, Young;Kim, Hyung-Kyung;Moon, Dae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.156-157
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    • 1998
  • It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

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The Fatigue Behavior of Mechanically Alloyed Al-4Mg Alloys Dispersed with Oxide Particles (기계적합금화된 분산형 Al-4Mg기 합금의 피로거동)

  • Pyun, J.W.;Cho, J.S.;Kwun, S.I.;Jo, Y.S.
    • Journal of the Korean Society for Heat Treatment
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    • v.6 no.4
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    • pp.237-242
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    • 1993
  • The fatigue behaviors of mechanically alloyed Al-4Mg alloys dispersed with either $Al_2O_3$ or $MgAl_2O_4$ oxide particles were investigated. This study maily concerned with the role of coherency of dispersed particles with the matrix on the fatigue behavior of the alloys. The $MgAl_2O_4$ which has a spinel structure with the lattice parameter of exactly the twice of Al showed the habit relation with the matrix. The mechanically alloyed Al-4Mg alloys showed stable stress responses with fatigue cycles from start to failure regadless of strain amplitudes and of existence of dispersoids. The Al-4Mg alloy dispersed with $MgAl_2O_4$ showed not only the better static mechanical properties but also the better low cycle fatigue resistance than that with $Al_2O_3$, i.e., much higher plastic strain energy dissipated to failure, at low strain amplitude. However, this alloy showed inferior fatigue resistance to that dispersed with $Al_2O_3$ or that without dispersion at high strain amplitude. These results imply that $MgAl_2O_4$ may promote lowering the stacking fault energy of the alloy inherited from the coherency with the matrix so that dislocations shuttle back and forth on the same slip plane without cross slipping to other planes during fatigue at low strain amplitude resulting in long fatigue life.

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Role of Crystallographic Tilt Angle of GaAs Substrate Surface on Elastic Characteristics and Crystal Quality of InGaP Epilayers (GaAs 기판표면의 Tilt각도가 InGaP 에피막의 탄성특성 및 결정질에 미치는 영향)

  • 이종원;이철로;김창수;오명석;임성욱
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.1
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    • pp.1-10
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    • 1999
  • InGaP epilayers were grown on the flat, $2^{\circ}$off, $6^{\circ}$ off, and $10^{\circ}$off GaAs substrates by organo-metallic vapor phase epitaxy, and influences of crystallographic misorientation of the substrate on the structural and optical properties such as lattice mismatch, elastic strain, lattice curvature, misfit stress, and PL intensity /line-width were investigated in this study. Material characterizations were carried out by TXRD( tripple-axis x-ray diffractometer) and low temperature (11K) PL (photoluminescence). With increase of the substrate misorientation angle (S.M.A.), the relative incorporation of Ga atoms on the substrate surface was found to be enhanced. Also, with increase of the S. M. A., the x-ray line-width of the InGaP epilayer was reduced, indicating that the crystal quality of the epilayer could be improved tilth a misoriented substrate. It was also found that the elastic accommodation of the strain-free lattice misfit was more remarkable in a misoriented sample. PL intensity increased, and PL line-width and emission wavelength decreased with the increase of S. M. A. The results conclude that the elastic characteristics and the crystal quality of the InGaP epilayer could be remarkably enhanced when the misoriented substrates were employed.

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Performance Evaluation of a New Buried Expansion Joint (새로운 매설형 신축이음장치의 성능 평가)

  • Hong, Seong-Hyeop;Park, Sang-Yeol;Jwa, Yong-Hyun
    • International Journal of Highway Engineering
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    • v.12 no.3
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    • pp.27-35
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    • 2010
  • Asphalt Plug Joint(APJ) is an buried expansion joint that enabling the smooth connection of expansion gap and road pavement by filling the gap with bituminous mixture of 20% bitumen and 80% aggregate by weight, so it secures evenness and expansion or contraction using the material's properties. Although APJ is designed to have a 6-7 year lifecycle, there are some cases where it is damaged within the first six months. This early damage cause traffic congestion due to frequent repair works, and social cost exceeding the installation cost of the joint. So, in this research, we have developed a new system of Buried Folding Lattice Joint(BFLJ) which can overcome the disadvantages of APJ, and have analyzed and compared it's performance with the conventional APJ through experiment with specimens. As a result of the experiment, APJ had crack formation on both ends of the gap plate, spreading to the surface of the expansion joint. With this result, we can conclude that the reason for early damage is the tension failure due to the concentration of strain in the asphalt mixture along the end of gap plate and the debonding along the joint section. In contrast, the newly developed BFLJ induced even transformation in the joint by applying moving stud and high performance material, and resolved APJ's disadvantage of strain concentration. Therefore, it could be seen that the newly developed BFLJ could overcome the disadvantages of APJ and prevent early damage.

BS/channeling studies on the epitaxially grown Pt(111) films on $Al_2O_3$(0001) (BS/Channeling을 이용한 Pt(111)/$Al_2O_3$(0001) 적층 생장 연구)

  • 이종철;김신철;김효배;정광호;김긍호;최원국;송종환
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.300-305
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    • 1998
  • Crystallinity and structual properties of the epitaxially grown Pt films on $Al_2O_3$(0001) substrate by rf magnetron sputtering at a substrate temperature of $600^{\circ}C$ were studied by using backscattering spectrometry (BS)/channeling and transmission electron microscopy (TEM) measurements. $MeV^4$He ion BS/channeling results showed that the channeling minimum yield of Pt film with a thickness of 3500$\AA$ was 4%. This indicates an excellent crystallinity of Pt film. When the thickness of Pt film was less than 200 $\AA$, the channeling minimum yield of Pt film increased sharply with the decrease in film thickness. The Pt layer on $Al_2O_3$(0001) substrate grew epitaxially to the direction of (111) with six-fold symmetry. Cross-sectional TEM images also showed that Pt film on $Al_2O_3$(0001) substrate consist of twinned domains to release the strain induced by the lattice mismatch and the surface roughness of the film increased at the twin boundaries where the strain was contcentrated.

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