• 한국표면공학회지
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• 제16권4호
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• pp.173-187
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• 1983

Zinc was electrodeposited at temperature from 20$^{\circ}C$ to 60$^{\circ}C$ over the ranges of the current density from 2 to 20 A/dm2 in acid chloride bath. The cathode overpotentials increased with increasing current density and decreasing tem-perature. The (10$.$3)-(10$.$2) preferred orientation developed at cathode overpotentials below about 450mV, the (10$.$3)(10$.$2)-(10$.$1) texture developed at overpotentials between 500mV and 950mV, and the (00$.$1) (10$.$3) texture developed at cathode overpotentials about 1000mV. The (00$.$1) (10$.$3) preferred orientation was also formed at the lower potentials between 400mV and 850mV at temperatures above 40$^{\circ}C$. The preferred orientations of the zinc deposits was discussed was discussed with both cathode overpo-tential and surface energy of deposit lattice planes. The pyramid type of structure with macrostep developed at low cathode overpotentials and the truncated pyramidal type developed at higher overpotenial.

• 소성∙가공
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• 제33권2호
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• pp.123-131
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• 2024

Plastic, the main material of FFF-type 3D printing, exhibits lower strength compared to metal. research aimed at increasing strength is needed for use in various industrial fields. This study analyzed three X-shape infill patterns(grid, lines, zigzag) with similar internal lattice structure. Moreover, tensile test considering weight and printing time was conducted based on the infill line multiplier and infill overlap percentage. The three X-shape infill patterns(grid, lines, zigzag) showed differences in nozzle paths, material usage and printing time. When infill line multiplier increased, there was a proportional increase in tensile strength/weight and tensile strength/printing time. In terms of infill overlap percentage, the grid pattern at 50% and the zigzag and lines patterns at 75% demonstrated the most efficient performance.

• 한국기계가공학회지
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• 제10권4호
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• pp.44-49
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• 2011

The crawler crane, which consists of a lattice boom, a driving system, and movable vehicle, is widely used in a construction site. It needs to be installed an overload limiter to prevent the overturning accident and the fracture of structure. This research is undertaken to provide the relation formula for designing the overload limiter as follows: First the relation formulas between the wire-rope tension and the hoisting load or the overturning ratio according to the luffing angle and length of a lattice boom are established. Secondly the derived formulas are corrected by using the compensated angle considering the deflection of boom through the finite element analysis. The stiffness analysis is carried out for 30-kinds of models as a combination of 6-kinds of luffing angle and 5-kinds of length of boom. Finally the shape design of a stick type load cell, which is the device to measure the wire-rope tension, is performed. 5-kinds of notch radius and 5-kinds of center hole radius are adopted as the design parameter for the strength analysis of the load cell.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.125-129
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• 2021

We investigated the electronic property and atomic structure for chalcopyrite (CH) Al_xGa_1-xAs semiconductor by using first-principles FPLMTO method. The CH-Al_xGa_1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-Al_xGa_1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-Al_xGa_1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1605-1608
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• 2004

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2{\theta}$) of 27.7$^{\circ}$ was well made by SEL method at annealing temperature of 250 $^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant a and grain size of the thin film in S ambience were appeared a little larger than those in only vacuum. The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}$m respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.2087-2089
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• 2003

The presence of narrowband interference (NBI) in Direct-sequence code division multiple access (DS/CDMA) systems is an inevitable problem when the interference is strong enough. The improvement in the system performance employs by adaptive narrowband interference suppression techniques. Basically there have been two types of method for narrowband interference suppression estimator/subtracter approaches and transform domain approaches. In this paper the focus is on the type of estimator/subtracter approaches. However, the binary direct sequence (DS) signal, that acts as noise in the prediction process is highly non-Gaussian. The case of a Gaussian interferer with known in an autoregressive (AR) signal or a digital signal and also in a sinusoidal signal (Tone) that included in is paper. The proposed NBI suppression is presence in an adaptive IIR notch filter for lattice structure and more powerful by using a variable step-size algorithm. The simulation results show that the proposed algorithm can significantly increase the convergence rate and improved system performance when compare with adaptive least mean square algorithm (LMS).

• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3407-3412
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• 2012

The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

• 한국진공학회지
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• 제18권5호
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• pp.384-389
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• 2009

ZnO는 육방정계결정구조의 물질로서 3.37 eV의 넓은 띠 간격과 60 meV의 큰 exciton 결합에너지에 따른 높은 효율의 자외선발광으로 짧은 파장의 빛 (녹, 청, 자외선)을 내는 LED (Light Emitting Diode) 분야에서 관심을 기울이고 있는 물질이다. LED제작을 위해서는 n형의 ZnO와 p형의 ZnO가 필요하지만 기본적으로 ZnO은 n형이므로 신뢰성 있는 p형 ZnO박막을 제작하기 위한 노력이 기울여지고 있다. 본 연구에서는 ALD (Atomic Layer Deposition)로 제작된 ZnO박막에 20 keV의 에너지를 갖는 질소이온을 $10^{13}{\sim}10^{15}ions/cm^2$로 조사한 후 Hall 효과 측정장치를 이용하여 질소이온 조사에 따른 전기적 특성변화를 조사하였다.

• Bulletin of the Korean Chemical Society
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• 제34권6호
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• pp.1656-1662
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• 2013

The ternary phase $EuZn_xIn_{4-x}$ has been identified as the main product of reactions of Eu, Zn, and In by using the In-flux method and characterized by both powder and single-crystal X-ray diffraction. The structure belongs to the common $BaAl_4$-type (tetragonal space group I4/mmm, Pearson code tI10) with lattice parameters of a = 4.5610(9) ${\AA}$, c = 12.049(3) ${\AA}$ for composition $EuZn_{1.10(12)}In_{2.90}$ and a = 4.5463(3) ${\AA}$, c = 12.028(2) ${\AA}$ for composition $EuZn_{1.18(2)}In_{2.82}$, respectively. In this structure, the Eu atoms are situated at the center of 18-vertex Fedorov polyhedra made of Zn and In atoms, where the 4d site is preferentially occupied by In and the 4e site is occupied by randomly mixed Zn and In atoms. Theoretical investigations using tight-binding linear muffintin orbital (TB-LMTO) method provide rationale for the observed site preferences and suggest potentially wider homogeneity range than the experimentally established for $EuZn_xIn_{4-x}$ ($x{\approx}1.1$).