• Journal of the Korean Magnetics Society
• /
• v.20 no.5
• /
• pp.173-177
• /
• 2010

The electronic structure of charge-density-wave (CDW) system $CeTe_2$ has been investigated by using angle-resolved photoemission spectroscopy (ARPES). The clearly dispersive band structures are observed in the measured ARPES spectra, indicating the good quality of the single-crystalline sample employed in this study. The four-fold symmetric patterns are observed in the constant energy (CE) mappings, indicating the $2{\times}2$ lattice deformation in the Te(1) sheets. The observed CE images are similar to those of $LaTe_2$, suggesting that Ce 4f states have the minor contribution to the CDW formation in $CeTe_2$. This study reveals that the carriers near the Fermi level should have mainly the Te(1) 5p and Ce 5d character, that the Te(1) 5p bands contribute to the CDW formation, and that the Ce 5d bands cross the Fermi level even in the CDW state.

• Journal of the Korean Magnetics Society
• /
• v.13 no.6
• /
• pp.231-236
• /
• 2003

The $Al_{0.2}$CoF $e_{1.8}$ $O_4$ferrite powders have been prepared by the sol-gel method. The crystallographic and magnetic properties of the sample depending on annealing temperature have been investigated by means of x-ray diffraction, FE SEM, Mossbauer spetroscopy and vibrating sample magnetometry. The x-ray diffractions of all samples annealing temperature above 873 K clearly indicate the presence of spinel structure, the lattice constant decrease from 8.425 $\AA$ at 873 K to 8.321 $\AA$ at 1073 K, whereas the particle size rapidly increase from about 39 nm at 673 K to about 108 nm at 1073 K. The Mossbauer spectra annealed above 873 K could be fitted as the superposition of two sextets due to F $e^{3+}$ at A-site and B-site. The isomer shift (IS) and quadruple splitting (QS) values nearly constant with annealing temperature, whereas magnetic hyperfine field ( $H_{hf}$) of A-site slowly in crease and that of B-site fastly increases with increasing annealing temperature. The magnetic behaviour of powders shows that the saturation magnetization increase from 0.7 emu/g at 473 K to 72.1 emu/g at 1073 K while the coercivity decrease from 0.951 kOe at 673 K to 0.374 kOe at 1073 K with increasing annealing temperature.

• Electrical & Electronic Materials
• /
• v.7 no.4
• /
• pp.317-324
• /
• 1994

In this study, new preparation method of LiCoO$_{2}$ was applied to develop cathode active material for Li rechargeable cell, and followed by X-ray diffraction analysis, electrochemical properties and initial charge/discharge characteristics as function of current density. HC8A72- and CC9A24-LiCoO$_{2}$ were prepared by heating treatment of the mixture of LiOH H$_{2}$O/CoCO$_{3}$(1:1 mole ratio) and the mixture of Li$_{2}$CO$_{3}$/CoCO$_{3}$(1:2 mole ratio) at 850 and 900.deg. C, respectively. Two prepared LiCoO$_{2}$s were identified as same structure by X-ray diffraction analysis. a and c lattice constant were 2.816.angs. and 14.046.angs., respectively. The electrochemical potential of CFM-LiCoO$_{2}$(Cyprus Foote Mineral Co.'s product), HC8A72-LiCoO$_{2}$ and CC9A24 LiCoO$_{2}$ electrode were approximately between 3.32V and 3.42V vs. Li/Li reference electrode. Stable cycling behavior was obtained during the cyclic voltammetry of LiCoO$_{2}$ electrode. According as scan rate increases, cathodic capacity decreases, but redox coulombic efficiency was about 100% at potential range between 3.6V and 4.2V vs. Li/Li reference electrode. Cathodic capacity of HC8A72-LiCoO$_{2}$ was 32% higher than that of CFM-LiCoO$_{2}$ and that of CC9A24-LiCoO$_{2}$ was 47% lower than that of CFM-LiCoO$_{2}$ at 130th cycle in the condition of lmV/sec scan rate. Constant cur-rent charge/discharge characteristics of LiCoO$_{2}$/Li cell showed increasing Ah efficiency with initial charge/discharge cycle. Specific discharge capacities of CFM and HC8A72-LiCoO$_{2}$ cathode active materials were about 93mAh/g correspondent to 34% of theretical value, 110mAh/g correspondent to 40% of theretical value, respectively. In the view of reversibility, HC8A72-LiCoO$_{2}$ was also more excellent than CFM- and CC9A24-LiCoO$_{2}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.6
• /
• pp.442-448
• /
• 2021

In this work, the (K_1-xAg_x)(Ta_0.8Nb_0.2)O₃ (x=0.1-0.4) ceramics were fabricated using mixed-oxide method, and their structural and electrical properties were measured. All specimens represented a pseudo cubic structure with the lattice constant of 0.3989 nm. When 0.4 mol of Ag was added, second phases induced from metallic Ag and K₂(Ta,Nb)₆O₁₆ phase were observed. Dielectric constant and dielectric loss of K(Ta_0.8Nb_0.2)O₃ specimen doped with 0.3 mol of Ag were 2,737 and 0.446, respectively. The curie temperature was about -5℃, which does not change with Ag addition. The remanent polarization began to decrease sharply around 12~15℃, and the temperature at which the remanent polarization began to decrease as the applied voltage increased shifted to the high temperature side. The electrocaloric effect (ΔT) and electrocaloric efficiency (ΔT/ΔE) of the (K_0.7Ag_0.3)(Ta_0.8Nb_0.2)O₃ ceramics were 0.01024℃ and 0.01825 KmV^-1, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.3
• /
• pp.297-303
• /
• 2024

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.3
• /
• pp.122-126
• /
• 2003

In this study, $Zn_{0.86}Mn_{0.14}$Te epilayer of 0.7 $\mu\textrm{m}$-thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from $Zn_{0.86}Mn_{0.14}$Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z $n_{0.86}$ M $n_{0.14}$Te epilayer were investigated to be zincblende and 6.140 $\AA$ from X-ray diffraction pattern, respectively. Mn composition x of $Zn_{1-x}Mn_x$Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of $Zn_{0.86}Mn_{0.14}$Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of $Zn_{0.86}Mn_{0.14}$Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer, respectively. The free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.2
• /
• pp.96-113
• /
• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Journal of the Korean Magnetics Society
• /
• v.14 no.1
• /
• pp.46-50
• /
• 2004

Compounds of $Y_{3-x}Ce_{x}Fe{5}O_{12}$(x=0.0, 0.1, 0.2, and 0.3) were prepared using the sol-gel method. The XRD measurements show that these samples have only a single phase of the garnet structure regardless of the amount of Ce substitution. The lattice constants of x = 0.0 and x = 0.3 were found to be a$_0$ = 12.3758 ${\pm}$0.0005 ${\AA}$ and 12.4062 ${\pm}$0.0005 ${\AA}$, respectively. The lattice constant increases linearly with increasing Ce concentration. The saturation magnetization was not changed flirty, with increasing Ce concentration, but coercivity decreased form 18.3 Oe to 5.8 Oe as x increased form x = 0.0 to x = 0.1. Mossbauer spectra of $Y_{3-x}Ce_{x}Fe{5}O_{12}$ were measured at various absorber temperatures from 13 K to Neel temperature. The Mossbauer spectra were fitted by least-squares technique with two subpatterns of Fe sites in the structure and corresponding to the 16a and 24d site. The temperature dependence of the magnetic hyperfine field in $^{57}$/Fe nuclei at the tetrahedral 240 and octahedral 16a sites were analyzed based on the Neel theory of ferrirnagnetism. The result of the Debye temperatures indicated that the inter-atomic binding force for the 24d site was larger than that for the 16a site.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.258-292
• /
• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Journal of the Korean Vacuum Society
• /
• v.6 no.2
• /
• pp.129-135
• /
• 1997

Undoped and Co-doped $ZnIn_2Se_4$ single crystals crystallized in the tetragonal space group 142m, with lattice constants a=5.748 $\AA$ and c=11.475 $\AA$, and a=5.567 $\AA$ and c=11.401 $\AA$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had an indirect band gap, the direct and the indirect energy gaps of these compounds decreased as temperature changed from 10 to 300 K. The temperature coefficients of the direct energy gaps were found to be $\alpha=3.71\times10^{-4}$eV/K and $\beta$=519 K for $\alpha=3.71\times10^{-4}$eV/K and $\beta$=421K for $ZnIn_2Se_4$: Co. The temperature coefficients of the indirect energy gaps were also found to be $\alpha=2.31\times10^{-4}$ eV/K and $\beta$=285 K for $ZnIn_2Se_4$, and $\alpha=3.71\times10^{-4}$eV/K and $\beta$=609 K for $ZnIn_2Se_4$:Co, respectively. Six impurity optical absorption peaks due to cobalt are observed in $ZnIn_2Se_4$:Co single crystal. These impurity optical absorption peaks can be attibuted to the electronic transitions between the split energy levels of$CO^{2+}$ ions located at Td symmetry site of $ZnIn_2Se_4$ host lattice. The 1st order spin-orbit coupling constant ($\lambda$), Racah parameter (B), and crystal field parameter (Dq) ARE GIVEN AS -$243\textrm{cm}^{-1}, 587\textrm{cm}^{-1}, \;and\;327\textrm{cm}^{-1}$, respectively.