• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.26-27
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• 2004

We present the first demonstration of the vertical-injection depleted optical thyristor laster diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 3.36 V and 10 A respectively. The holding voltage and current are respectively 1.37 V, 100 A. The lasing threshold current is 131 mA at 25 C. The output peak wavelength is at 1578 nm at a bias current equal to 1.22 times threshold.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.139-143
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• 1991

GRIN-SCH quantum well structured Laser Diode were fabricated using MOCVD and operated as CW at room temperature. The threshold current density of the LD with 670${\mu}{\textrm}{m}$ cavity length was 530 A/$\textrm{cm}^2$. For the ridge waveguide type index guiding structured LD with 6${\mu}{\textrm}{m}$ stripe width and 240${\mu}{\textrm}{m}$ cavity length, the threshold current was 50㎃. The maximum differential quantum efficiency was 0.95W/A when the optical output was 60mW. The lasing wavelength of QW LD was 865nm. In the L-I measurement. TE mode was superior to TM mode. From the near field pattern, single lateral mode operation was observed.

• The Journal of Engineering Research
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• v.3 no.1
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• pp.171-180
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• 1998

The low cost fiber ring laser can be tuned by controlling polarization states within the loop. In this paper, we investigate its operating principle and verify the performance through an experiment. This ring laser consists of a polarization controller and an intracavity polarizer for the wavelength tuner and semiconductor optical amplifier for the gain medium. It is seen that the lasing wavelength may be tuned through the range of 1540~1560 nm as a polarization controller and a polarizer are adjusted.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.156-157
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• 2000

The amplification method using evanescent wave coupling has a long history and has been widely used as a new lasing method, especially, in the waveguide optics$^{(1)}$ . In particular, it has been observed experimentally that when the light wave propagating in a dielectric medium is totally reflected at the planar interface between the dielectric and a pumped active medium, the reflectance may be greater than unity, i.e., amplification is possible$^{(2)}$ . There were several attempts by other authors to explain this enhanced internal reflection (EIR) classically$^{(3)}$ . They commonly introduced a complex refractive index for the active medium with its imaginary part being negative, and this scheme was also used to describe an amplification process in a waveguide having active-cladding region$^{(4)}$ . However these theories are phenomenological, using macroscopic constants, and therefore a microscopic theory is needed to understand EIR in a fundamental level. (omitted)

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.406-413
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• 2014

An optical true-time delay beam-forming system using a tunable dispersion compensating module (DCM) for dense-wavelength division modulation (DWDM) and a multiwavelength fiber ring laser for a phased array antenna is proposed. The multiwavelength fiber ring laser has one output that includes four wavelengths; and four outputs that include only single-wavelength. The advantage of such a multiwavelength fiber ring laser is that it minimizes the number of devices in the phased array antenna system. The time delays according to wavelengths, which are assigned for each antenna element, are obtained from the tunable DCM. The tunable DCM based on a temperature adjustable Fabry-Perot etalon is used. As an experimental result, a DCM could be used to obtain the change of the beam angle by adjusting the dispersion value of the DCM at the fixed lasing wavelengths of the fiber ring laser in the proposed optical true-time delay.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.185-188
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• 2003

본 논문에서는 공진기 길이 변화에 따른 V-자형 알루미늄갈륨비소-갈륨비소(AIGaAs-GaAs) 양자선 레이저의 서브밴드 에너지 천이에 대한 스펙트럼과 시간적 스위칭 특성을 조사하였다. $300{\mu}m$ 이하의 짧은 공진기 길이를 갖는 V-자형 양자선 레이저는 공진기 손실의 증가로 인하여 n=1에서 n=2 서브밴드(subband)로의 양자화 천이(불연속적인 파장 스위칭)가 발생하였고, 초단 광펄스를 생성하는 이득 스위칭방식을 이용하여 초고속 레이징 특성을 관찰하였다.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.276-278
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• 1997

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

• Ceramist
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• v.20 no.4
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• pp.55-73
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• 2017

As one of the most versatile semiconductors, zinc oxide (ZnO) with one-dimensional (1-D) nanostructures has been significantly developed for the application of ultraviolet (UV) lasers, photochemical sensors, photocatalysts, and so on. Such 1-D nanowires could be easily achieved due to the anisotropic growth rate along the [0001] direction. However, such typical growth habit leads to decrease the surface area of the (0001) plane, which plays a central role in not only UV lasing action but also photocatalytic reaction. This fact lead us to develop ZnO crystal with enhanced polar surface area through crystal growth control. The purpose of this review is to provide readers a simple route to plate-type ZnO crystal with highly enhanced polar surfaces and their applications for UV-laser, photocatalyst, and antibacterial agents. In addition, we will highlight the recent study on pilot-scale synthesis of plate-type ZnO crystal for industrial applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1268-1272
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• 2003

In order to enhance current Injection efficiency of Y-groove inner strife(VIS) quantum wire lasers, three different current configurations, n-blocking on p-substrate(VIPS), p-n-p-n blocking on n-substrate(VI(PN)nS), p-blocking on n-substrate(VINS) have been designed and fabricated. Among them VIPS laser showed the most stable characteristics of lasing up to 5 mW/facet, a threshold current of 39.9 mA at 818 nm, and an external differential quantum efficiency of 24 %/facet. The current tuning rate was almost linear 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/$^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.48-56
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• 1995

The operating characteristics, such as, the threshold gain, lasing frequency, and longitudinal intensity profile, etc., of 1.55$\mu$m DFB laser diode with index and/or gain grating structures and with one side AR-coated mirror have been analyzed. From this analysis, the optimum design parameters have been shown that ${\Delta}{\Omega}$ (the phase difference between index grating and gain grating) is 0 or ${\pi}$, (xL)$_{r}$=1~3 and (xL)$_{i}$=0.5~0.9. It has been also shown that the modal selectivity and intensity uniformity of the DFB lasers with .DELTA..OMEGA.=0 are ~1.2 times better thatn those of the DFB lasers with ${\Delta}{\Omega}$= ${\pi}$.