• Title/Summary/Keyword: Laser diffraction spectroscopy

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Preparation and Characterization of Suvarna Bhasma Parada Marit - Characterization of Suvarna Bhasma Parada Marit -

  • Thakur, Kapil;Gudi, Ramacharya;Vahalia, Mahesh;Shitut, Shekhar;Nadkarni, Shailesh
    • Journal of Pharmacopuncture
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    • v.20 no.1
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    • pp.36-44
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    • 2017
  • Objectives: The goal of this study was to characterize Suvarna Bhasma Parada Marit by using the Ayurvedic test parameters, physico-chemical tests, and various instrumentation techniques. Methods: Suvarna Bhasma, an Ayurvedic formulation manufactured as per Bharat Bhaishajya Ratnakar 5/8357 (BBR), has been studied using various instrumentation techniques: X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), laser particle size distribution (PSD) analysis, fourier transform infrared spectroscopy (FT-IR), and atomic absorption spectroscopy (AAS), and physico-chemical parameters, such as the loss on drying (LOD), loss on ignition (LOI), and acid insoluble Ash (AIA) were determined. In addition, Ayurvedic tests, such as Rekhapurnatva (enterable in the furrows of the fingers), Varitaratwa (floatable over water), Nirdhoomta (smokeless), Dantagre Kach-Kach (gritty particle feeling between the teeth), were performed. Results: The XRD study showed Suvarna Bhasma to be crystalline in nature and to contain more than 98% gold. The mean size of the gold crystallites was less than 10 microns, and the morphology was globular and irregular. Suvarna Bhasma contains gold as its single and major element, with EDAX and FT-IR spectra showing that it is more than 98% pure gold. The moisture content (LOD) is less than 0.5%, the LOI is less than 2%, and the AIA is not less than 95%. The Ayurvedic tests, as specified above, helped to confirm the quality of Suvarna bhasma prepared as per the text reference (BBR). Conclusion: This chemical characterization of Suvarna Bhasma performed in this study by using modern instrumentation techniques will be helpful in understanding its pharmacological actions and will help in establishing quality protocols and specifications to substantiate the safety, efficacy & quality of Suvarna Bhasma.

Infrared Scanning Near-Field Optical Microscopy (IR-SNOM) Below the Diffraction Limit

  • Sanghera, J.S.;Aggarwal, I.D.;Cricenti, A.;Generossi, R.;Luce, M.;Perfetti, P.;Margoritondo, G.;Tolk, N.;Piston, D.
    • Ceramist
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    • v.10 no.3
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    • pp.55-66
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    • 2007
  • Infrared Scanning Near-field Optical Microscopy (IR-SNOM) is an extremely powerful analytical instrument since it combines IR spectroscopy's high chemical specificity with SNOM's high spatial resolution. In order to do this in the infrared, specialty chalcogenide glass fibers were fabricated and their ends tapered to generate SNOM probes. The fiber tips were installed in a modified near field microscope and both inorganic and biological samples illuminated with the tunable output from a free-electron laser located at Vanderbilt University. Both topographical and IR spectral images were simultaneously recorded with a resolution of ${\sim}50\;nm$ and ${\sim}100\;nm$, respectively. Unique spectroscopic features were identified in all samples, with spectral images exhibiting resolutions of up to ${\lambda}/60$, or at least 30 times better than the diffraction limited lens-based microscopes. We believe that IR-SNOM can provide a very powerful insight into some of the most important bio-medical research topics.

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$^1$Highly-crystalline $sp^3$-bonded 5H-BN prepared by plasma-packets assisted pulsed-laser deposition: a room-temperature UV light-emitter at 225nm

  • Komatsu, Shojiro
    • Proceedings of the Korea Crystallographic Association Conference
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    • 2003.05a
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    • pp.6-6
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    • 2003
  • Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (˙5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathode luminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n- type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.

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Luminescence characteristics of amorphous GaN quantum dots prepared by laser ablation at room temperature

  • Shim, Seung Hwan;Yoon, Jong-Won;Koshizaki, Naoto;Shim, Kwang Bo
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.109-116
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    • 2003
  • Amorphous GaN Quantum dots(a-GaN QDs) with particle diameters less than bohr radius(~11nm) were successfully fabricated at room temperature by a laser ablation of high densified GaN target. Transmission electron microscopy, SAED diffraction pattern and X-ray photoelectron spectroscopy confirmed the presence of a-GaN QDs with particle size of 7.9, 6.9, 4.4nm under the Ar gas pressures of 50, 100 and 200 Pa, respectively. The room temperature PL and absorbance spectra showed a strong band emission centered at 3.9 eV in a-GaN QDs made under the gas pressures of 100 and 200 Pa, which is nearly 0.5eV blueshifted with respect to the bulk crystal band gap.

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Growth of MnS Thin Film on c-Sapphire by Pulsed Laser Deposition (PLD 법에 의한 c-사파이어 기판위의 MnS 박막성장)

  • Song, Jeong-Hwan
    • Korean Journal of Materials Research
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    • v.17 no.9
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    • pp.475-479
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    • 2007
  • Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

Synthesis and Characterization of KTiNbO5 Nano-particles by Novel Polymerizable Complex Method

  • Wang, Ning-Ning;Lan, Yun-Xiang;He, Jie;Dong, Rui;Hu, Jin-Song
    • Bulletin of the Korean Chemical Society
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    • v.34 no.9
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    • pp.2737-2740
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    • 2013
  • The layered $KTiNbO_5$ was successfully synthesized with titanium(IV) isopropoxide and niobium oxalate by a novel polymerized complex (PC) method. The morphology and structure of the as-prepared sample was characterized by means of High-Resolution Transmission Electron Microscope, powder X-ray diffraction, and Laser Raman Spectroscopy. The spectral response characteristic was recorded by using UV-vis Diffuse Reflectance Spectroscopy. Results show that $KTiNbO_5$ as-prepared by PC method presents an uniform morphology of nano-particles, the mean particle sizes is ca. 28 nm corresponding to the (002), and the crystal structure can be well indexed to the orthorhombic phase. The sample as-prepared by PC method has higher band gap energy than that of the sample prepared by a solid-state reaction method due to the quantum size effect.

Unusual Electrical Transport Characteristic of the SrSnO3/Nb-Doped SrTiO3 Heterostructure

  • De-Peng Wang;Rui-Feng Niu;Li-Qi Cui;Wei-Tian Wang
    • Korean Journal of Materials Research
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    • v.33 no.6
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    • pp.229-235
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    • 2023
  • An all-perovskite oxide heterostructure composed of SrSnO3/Nb-doped SrTiO3 was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO3 and Nb-doped SrTiO3 were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

Analysis of rutile single crystals grown by skull melting method (Skull melting법에 의해 성장된 rutile 단결정 분석)

  • Seok, Jeong-Won;Choi, Jong-Koen
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.5
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    • pp.181-188
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    • 2006
  • Rutile single crystals grown by skull melting method were cut parallel and perpendicular to growth axis, and both sides of the cut wafers (${\phi}5.5mmx1.0mm$) were then polished to be mirror surfaces. The black wafers were changed into pale yellow color by annealing in air at 1200 and $1300^{\circ}C$ for $3{\sim}15\;and\;10{\sim}50$ hours, respectively. After annealing, structural and optical properties were examined by specific gravity (S.G), SEM-electron backscattered pattern (SEM-EBSP), X-ray diffraction (XRD), FT-IR transmittance spectra, laser Raman spectroscopy (LRS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These results are analyzed increase of weight in air, decrease of weight in water and specific gravity, shown secondary phase of needle shape, diffusion of oxygen ion and increase of $Ti^{3+}$. From the above results, we suggest that the skull melting method grown rutile single crystals contain defect centers such as $O_v,\;Ti^{3+},\;O_v-Ti^{3+}$ interstitials and $F^+-H^+$.

Biomineralization of Calcium Carbonate Polymorphs by the Bacterial Strains Isolated from Calcareous Sites

  • Dhami, Navdeep Kaur;Reddy, M. Sudhakara;Mukherjee, Abhijit
    • Journal of Microbiology and Biotechnology
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    • v.23 no.5
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    • pp.707-714
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    • 2013
  • Microbially induced calcium carbonate precipitation (MICCP) is a naturally occurring biological process that has various applications in remediation and restoration of a range of building materials. In the present investigation, five ureolytic bacterial isolates capable of inducing calcium carbonate precipitation were isolated from calcareous soils on the basis of production of urease, carbonic anhydrase, extrapolymeric substances, and biofilm. Bacterial isolates were identified as Bacillus megaterium, B. cereus, B. thuringiensis, B. subtilis, and Lysinibacillus fusiformis based on 16S rRNA analysis. The calcium carbonate polymorphs produced by various bacterial isolates were analyzed by scanning electron microscopy, confocal laser scanning microscopy, X ray diffraction, and Fourier transmission infra red spectroscopy. A strain-specific precipitation of calcium carbonate forms was observed from different bacterial isolates. Based on the type of polymorph precipitated, the technology of MICCP can be applied for remediation of various building materials.

Crystal Growth and Luminescence Properties of KCl Doped with Eu2+ Ions (KCl:Eu 단결정 성장과 형광특성)

  • Je, Jae-Yong;Jang, Kyoung-Hyuk;Park, Chul-Woo
    • Journal of Sensor Science and Technology
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    • v.20 no.1
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    • pp.30-34
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    • 2011
  • Single crystal of KCl doped with $Eu^{2+}$ ions was grown by the Czochralski method in the high pressure Ar gas(purity 99.999 %) atmosphere with chamber pressure from which the crystal with high quality was obtained. As grown $KCl:Eu^{2+}$ crystal was checked by X-ray diffraction. Luminescence properties of KCl:Eu are investigated by laser-excitation spectroscopy under 355 nm excitation at 14 and 295 K. The broad emission band due to the $Eu^{2+}$ 5d $\rightarrow$ 4f transition is peaked at 417 nm with full width at half maximum of about 20 and 30 nm.