• Journal of the Optical Society of Korea
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• v.20 no.3
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• pp.407-412
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• 2016

We analyzed through numerical simulations the properties of a square beam homogenizer near the target for laser shock peening. The efficiency was calculated near the target by considering the plasma threshold of the metals. We defined the depth of focus of the square beam homogenizer with a given efficiency near the target. Then, we found the relationship between the depth of focus for the laser shock peening and four main parameters of the square beam homogenizer: the plasma threshold of the metal, the number of lenslets in the array-lens, the focal length of the condenser lens and the input beam size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.578-583
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• 2011

We report on the design of a holographic homogenizer composed of a periodic hologram and a condensing lens. If the hologram is periodic, the homogenizer is free from the alignment error of the incident laser beam. Holographic homogenizer also has an advantage of the flexibility in the size of the target beam. We calculated theoretically the Fraunhofer diffracted wave function when a rectangular laser beam is incident on a periodic hologram. The diffracted wave is the sum of sinc functions at regular distance. The width of each sinc function depends on the size of the incident laser beam and the distance between the sinc functions depends on the period of the hologram. We calculated numerically the diffracted light intensity for various ratios of the size of the incident laser beam to the period of the hologram. The results show that it is possible to make the diffracted beam uniform at a certain value of the ratio. The uniformity is high at the central part of the target area and low near the edge. The more sinc functions are included in the target area, the larger portion of the area becomes uniform and the higher is the uniformity at the central part. Therefore, we can make efficient homogenizer if we design a hologram so that the maximum number of the diffracted beams may be included in the target area.

• Current Optics and Photonics
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• v.1 no.3
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• pp.221-227
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• 2017

To apply a square-shaped beam homogenizer to laser shock peening, it should be designed with a long working distance and by considering metal targets with various shapes and textures. For long working distances, a square-shaped beam homogenizer with a long depth of focus is required. In the range of working distance, the laser beam is required to have not only high efficiency but high uniformity, in other words, a good peening quality is guaranteed. In this study, we defined this range as the working distance for laser shock peening. We have simulated the effect of some parameters on the working distance. The parameters include the focal length of the condenser lens, pitch size of the array lens, and plasma threshold of the metal. The simulation was performed through numerical analysis by considering the diffraction effect.

• Current Optics and Photonics
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• v.5 no.5
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• pp.500-505
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• 2021

We demonstrated a wide-fan-angle flat-top irradiance pattern with a very narrow linewidth by using an aspheric lens and a long-pitch reflective diffraction grating. First, we numerically designed a diffraction-based linear beam homogenizer. The structure of the Al diffraction grating with an isosceles triangular shape was optimized with 0.1-mm pitch, 35.5° slope angle, and 0.02-mm radius of the rounding top. According to the numerical results, the linear uniformity of the irradiance was more sensitive to the working distance than to the shape of the Al grating. The designed Al grating reflector was fabricated by using a conventional mold injection and an Al coating process. A uniform linear irradiance of 405-nm laser diode with a 100-mm flat-top length and 0.176-mm linewidth was experimentally demonstrated at 140-mm working distance. We believe that our proposed linear beam homogenizer can be used in various potential applications at a precise inspection system such as three-dimensional morphology scanner with line lasers.

• Korean Journal of Optics and Photonics
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• v.24 no.5
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• pp.224-230
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• 2013

Laser Lift-Off (LLO) is a process that removes a GaN or AIN thin layer from a sapphire wafer to manufacture vertical-type LEDs. It consists of a light source, an attenuator, a mask, a projection lens and a beam homogenizer. In this paper, we design an attenuator and a projection lens. We use the 'ZEMAX' optical design software for analysis of depth of focus and for a projection lens design which makes $7{\times}7mm^2$ beam size by projecting a beam on a wafer. Using the 'LightTools' lighting design software, we analyze the size and uniformity of the beam projected by the projection lens on the wafer. The performance analysis found that the size of the square-shaped beam is $6.97{\times}6.96mm^2$, with 91.8 % uniformity and ${\pm}30{\mu}m$ focus depth. In addition, this study performs dielectric coating using the 'Essential Macleod' to increase the transmittance of an attenuator. As a result, for 23 layers of thin films, the transmittance total has 10-96% at angle of incidence $45-60^{\circ}$ in S-polarization.