• 제목/요약/키워드: Laser Diode

검색결과 1,017건 처리시간 0.027초

다이오드레이저를 이용한 디스플레이 모듈 내 이방성 전도 필름(ACF) 접합 기술에 관한 연구 (Study on a New ACF Bonding Methods in LCD Module Using a High Power Diode Laser)

  • 류광현;서명희;남기중;곽노흥
    • 한국레이저가공학회지
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    • 제8권3호
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    • pp.21-26
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    • 2005
  • A bonding process between tape-carrier package and a glass panel with anisotropic conductive film (ACF) has been investigated by making use of high power diode laser as a heat source for cure. The results from modeling of process and from optical properties of layers showed that heat absorbed from polyimide film surface and ACF layer is dominant source of curing during laser illumination. Laser ACF bonding has better bonding quality than conventional bonding in view of peel strength, flatness, pressure unbalance and processing time. New ACF bonding processes by making use of high power diode laser are proposed.

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LTPS 공정 Diode Laser Annealing 방식을 이용한 Poly-Si 결정화

  • 이준기;김상섭
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.336-336
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    • 2011
  • AMOLED에 대한 관심이 높아짐에 따라 LTPS (Low Temperature Poly Silicon) TFT에 대한 연구가 활발히 이루어지고 있다. 다결정 실리콘은 단결정 실리콘에 비해 100 cm2/V 이상의 이동도를 보이는 우수한 특성으로 인해 AMOLED 디스플레이에 적합하며 여러 기업에서 LTPS 공정을 이용한 TFT제작을 연구 중이다. LTPS 공정은 현재 ELA (Excimer Laser Annealing) 방식으로 대면적 유리기판에 ELA 방법을 적용함에 있어 설비투자 비용이 지나치게 높아진다는 단점을 가지고 있다. 설비투자 비용의 문제점을 해결하기 위해 Diode Laser을 이용하여 Annealing하는 방법에 대해 연구하였다. 본 연구는 Diode Laser Annealing 방식을 이용하여 poly-Si을 구현하였다. 단결정 실리콘을 제작하기 위해 ICP-CVD장비를 이용하여 150$^{\circ}C$에서 SiH4, He2 혼합, He/SiH4의 flow rate는 20/2[sccm], RF power는 400 W에서 700 W으로 가변, 증착 압력은 25mTorr으로 하였다. 940 nm 파장의 30 W Diode Laser를 8 mm Spot Size로 a-Si에 순간 조사하여 결정화, 그 결과 grain을 형성한 polycrystalline 구조를 확인하였다.

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다이오드 레이저를 이용한 칸디다 알비칸스에 대한 항균 광역학 요법 (Antimicribial Photodynamic Therapy Using Diode Laser on Candida Albicans)

  • 김지원;구본열
    • 대한방사선기술학회지:방사선기술과학
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    • 제44권2호
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    • pp.141-146
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    • 2021
  • This study aimed to explore whether photodynamic therapy using Radachlorin and diode laser is an effective inhibitor of Candida albicans. Suspensions of Candida albicans were obtained, inoculated in petri dishes with Radachlorin, and incubated for 30 min. Then, the laser light of a diode laser was irradiated at at energy densities of 3 J/cm2, 5 J/cm2, 7 J/cm2. As a result, Candida albicans showed a killing rate of 91.5% at an energy density of 7 J/cm2. This study found that photodynamic therapy using a Radachlorin and diode laser was effective for the inhibition of Candida albicans.

Laser Diode의 무반사코팅 설계 및 특성에 관한 연구 (Study about Anti-Reflection Coating Design and Characteristic of Laser Diode)

  • 기현철;김효진;김희종;한정희;구할본
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.424-425
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    • 2007
  • Anti-Reflection and High-reflection coating on the facet of semiconductor laser diode. To prevent internal feedback from both facets for realizing super luminescent diode and reducing the reflection-induced intensity noise of laser diode. Anti-Reflection coating Film was designed by Macleod Simulator. Coating Materials were decided $Ti_3O_5$ and $SiO_2$. Thickness of Coating layer $Ti_3O_5/SiO_2$ were 105[nm], 165[nm]. In the study Anti-Reflection coating Film was design for Laser diode and deposited by Ion-Assisted Deposition system. Then manufactured thin film measured electrical properties(L-I-V, Se, Resistor) and Optical properties(wavelength FFP). Slop-efficiency and FFP characteristic is 0.302[W/A], $22.3^{\circ}$(Horizontal), $24.4^{\circ}$(Vertical).

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Treatment of Laryngotracheal Papilloma with 532-nm Diode Laser

  • Shim, Jaehyun;Choi, Soo Jeong;Jung, Kwang-Yoon;Baek, Seung-Kuk
    • Medical Lasers
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    • 제9권2호
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    • pp.190-193
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    • 2020
  • A 45-year-old Korean male with laryngotracheal papilloma was treated using a 532-nm diode laser at six watts with a pulse width of 25 milliseconds. Two months after the laser treatment, the resected region was well-healed without significant scar contracture. This outcome suggests that a 532-nm diode laser can be a safe and effective treatment for laryngotracheal papilloma.

비냉각 방식 레이저를 이용한 2.SGbps 광 트랜스폰드의 온도 특성 (Temperature Effects of 2.SGbps optical transponder with uncooled laser diode)

  • 두영호;장진환;김창봉
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(1)
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    • pp.203-206
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    • 2002
  • We implemented 2.5Gbps optical transponder by using uncooled laser diode and measured temperature effects of 2.5Gbps uncooled laser diode, such as optial power vs. injection current, extinction ratio, and power penaty.

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Determination of the Dissociation Constant of Thymol Blue with Diode-Laser/Fiber-Optic Thermal Lensing Spectroscopy

  • 김성호;노영순
    • Bulletin of the Korean Chemical Society
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    • 제19권8호
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    • pp.822-824
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    • 1998
  • The simple and convenient measurement of the dissociation constant of an indicator, thymol blue, was achieved by using a portable diode-laser/fiber-optic thermal lensing spectroscopy, which consisted of a visible diode laser, a photodiode, and an optical fiber. It gives comparable results to the cited value obtained from a conventional UV/VIS spectroscopy.

혈류 개선용 레이저다이오드 치료기 개발 (Development of Laser Diode Medical Therapy Apparatus for Blood Stream Improvement)

  • 천민우;김성환;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.496-496
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    • 2007
  • Low level laser therapy has various therapy effects. This paper performed the basic study for fabricating the low level laser therapy apparatus, and one of the goals of this paper was to make this apparatus used handily. The apparatus has been fabricated using the laser diode and microprocessor unit. The apparatus used a 7850m Laser diode for blood stream improvement and was designed for a pulse width modulation type to increase stimulation effects. In result, we could get the light power of 785nm wavelength.

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다이오드 레이저를 이용한 Chip On Glass 접합에 관한 연구 (Study of Chip On Glass Bonding Method using Diode Laser)

  • 서명희;류광현;남기중
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.423-426
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    • 2005
  • A new chip on glass(COG) technique by making use of a high power diode laser for LCD driver IC packaging of LCD has been developed. A laser joining technology of the connection of IC chip to glass panel has several advantages over conventional method such as hot plate joining: shorter process time, high reliability of joining, and better fur fine pitch joining. The reach time to cure temperature of ACF in laser joining is within 1 second. In this study, results show that the total process time of joining is reduced by halves than that of conventional method. The adhesion strength is mainly 100-250 N/cm. It is confirmed that the COG technology using high power diode laser joining can be applied to advanced LCDs with a fine pitch.

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