• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1503-1505
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• 1998

Stearic acid was deposited on surface of 9[MHz], AT-cut quartz crystal microbalance as gas sensing material using Langmuir-Blodgett(LB) technique. We measured gas response between deposited LB films and organic gas for various temperature($0{\sim}80^{\circ}C$). The resonant frequency changed due to absorbance of organic gas such as methanol and butanol gas at room temperature. However, the resonant frequency not responded to methanol gas at temperature above melting point of deposited LB films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.73-73
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• 2008

In this work, the study on the $SiO_2$ film non-uniformity by PECVD (Plasma Enhanced Chemical Vapor Deposition) was performed. Plasma diagnostics was analyzed by a DLP(Double Langmuir Probe) and a probe-type QMS(Quadrupole Mass Spectrometer) in order to investigate the spatial distribution of the plasma species in the chamber. The relationship between the plasma species and the depositing rate of the films was examined. On the basis of this work, it was confirmed that O radical density mainly contributed to the increase in the depositing rate of the $SiO_2$ films and the electron temperature in the plasma had a main effect on the formation of the oxygen radicals.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1562-1564
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• 1996

Langmuir-Blodgett (LB) method have been used by many rescarcher because of its facility to control the thickness of film as molecular order and orientation of molecular. We fabricated MIM device using copolymer LB films of $2C_{18}MA-VE_2$ and elecctrical conduction mechanism in ultra-thin LB film were investigated. In our experimental results, the maleate copolymer LB film have the properity of insulator like organic ultra-thin fiim. Its diclcctric constant was about 3.5 and its voltage generation about 0.1 Volt. And Schottky current was apeared as electrical conduction current and Schottky barrier was about 0.9(eV).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1244-1246
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• 1997

In conducting systems based on Langmuir - Blodgett (LB) films, tetracyanoquinodimethane(TCNQ) derivatives have been extensively studied as electron acceptor molecules. We have fabricated N-docosyl N'-methyl viologen diTCNQ (DMVT) anion radical LB film and investigated the FT-IR, ESR, and AFM images as the optical, magnetic properties and morphology of the LB film. We have measured in-plane electrical conductivity with number of layers. The in-plane conductivities are approximately $10^{-7}{\sim}10^{-6}\;S/cm$.

• 대한화학회지
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• 제38권2호
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• pp.87-91
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• 1994

세룰로오스 에스터의 LB막을 제조하여 분석하였다. 탄화수소 사슬 길이에 대한 압력-면적 곡선의 변화를 알아보았으며, 압력-면적 곡선의 온도에 대한 의존성으로부터 상전이 과정을 설명하였다. 수평증착법으로 X-type의 다층막을 만들 수 있었으며 접축각, 두께 및 XPS를 측정하였다.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.20-20
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• 2002

Based on experimental and theoretical analyses, we suggested a new possibility that the CVD diamond films grow not by the atomic unit but by the charged clusters containing a few hundreds of carbon atoms, which form spontaneously in the gas phase [J. Crysta] Growth 62 (1996) 55]. These hypothetical negatively-charged clusters were experimentally confirmed under a typical hot-filament diamond CVD process. Thin film growth by charged clusters or gas phase colloids of a few nanometers was also confirmed in Si and ZrO₂ CVD and appears to be general in many other CVD processes. Many puzzling phenomena in the CVD process such as selective deposition and nanowire growth could be explained by the deposition behavior of charged clusters. Charged clusters were shown to generate and contribute at least partially to the film deposition by thermal evaporation. Origin of charging at the relatively low temperature was explained by the surface ionization described by Saha-Langmuir equation. The hot surface with a high work function favors positive charging of clusters while that of a low work function favors negative charging.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.628-636
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• 1998

LB layers L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multiayers was determined by ellipsometry. Ut was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitiance and low lekage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLD capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.415-418
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• 1998

The maleate copolyrner($C_{18}MA-VE_2$) is used as sensitive materials and deposited on the slide-glass substrates at room temperature using Langmuir-Blodgett(LB) method. The results of current-time(1-t) measurements are performed to investigate the gas-detection characteristics of the sensitive LB films in the presence of organic gases just as chloroform, acetone, ethanol, methanol using the apparatus for the gas-detection measurement. Several interesting responses are observed at room temperature, such as reversible response, sensitivity and response time. Response time and sensitivities are evaluated 160~220[sec], minimum 6[times], maximum 70[times] for each organic gas by adsorption and penetration of the organic gases in the relation concentration of 100[%], respectively.

• 대한전기학회논문지
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• 제41권7호
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• pp.753-759
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• 1992

For the fabrication of the microscale memory or electrical devices, Langmuir-Blodgett(LB) method is the most possible candidate. N-Alkylquinolium-TCNQ compounds were synthesized. The structure of the compounds were identified by the NMR spectroscopy and the purity were checked to be good by the elemental analysis. The surface pressure($\pi$) was measured at the air-water interface. The isotherm showed two transitions at 30mN/m and 45mN/m. The LB films were deposited by the home-made Kuhn type apparatus. The transfer ratio($\tau$) of the deposition was more than 0.95 for the up-stroke and less than 0.4 for the down-stroke. The absorbance peaks of the LB films appear at around 420nm and 700-820nm.