• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.423-426
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• 1995

Langmuir-Blodgett technique offers a convenient and elegant way to organic conducting systems for ultra thin films. In conducting systems based on LB films, TCNQ derivatives have been extensively studied as electron acceptor molecules in a large number of organic conducting systems.[1] A very interesting UV-visible spectra of octadecylviologen-$(TCNQ^-)_2$ was obtained from a methylenechloride and acetonitrile mixture, and from Langmuir-Blodgett films. The ESR characteristics of octadecylviologen-$(TCNQ^-)_2$ were studied to understand conducting mechanism and structure of LB films. The ESR spectra infer that the N-dococylquinolinium-TCNQ LB films has anisotropic property. But octadecylviologen-$(TCNQ^-)_2$ does not show angular dependence. As the temperature increases from 350K to 450K, the ESR signal of LB films becomes sharp. Scanning calorimetry(DSC) of octadecylviologen-$(TCNQ^-)_2$ provides the endothermic reaction temperature of the films, 340K, which corresponds to the temperature, 365K, of the new ESR signal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.698-703
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• 2009

We report the studies on the structrural properties of Langmuir Blodgett (LB) films fabricated from the copolymer of vinylidenefluoride (VDF) with trifluoroethylene(TrFE). The formation of nanomesas induced by thermal annealing at $135\;^{\circ}C$ for 1 hour was investigated with the atomic force microscope (AFM) and the X-ray diffractometer (XRD). From the result of surface morphology change in 30 monolayer LB film, we find that the annealing treatment on the P(VDF-TrFE) LB film result in the plastic deformation of crystalline polymer. The ${\beta}$ phase crytalline structure in annealed LB film was clearly confirmed from the XRD peak at $19.7^{\circ}$.

• Electrical & Electronic Materials
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• v.1 no.4
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• pp.303-310
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• 1988

본 논문에서는 Langmuir-Blodgett법으로 유기초박막을 제작하기 위하여 시료인 (N-docosyl pyridinium)-TCNQ(1:2) 작제를 합성하고 이를 초박막으로 제작한 다음, U.V측정, capacitance측정, 그리고 기판과 수직한 방향의 도전율등을 측정하여 막이 잘 이루어지고 있음을 확인하였다. 한편, 하부 전극을 Al로 할 경우 전극표면에 생기는 자연 산화막(Al$_{2}$O$_{3}$)의 두께는 37.1.angs.정도이었으며 기관과 수직한 방향의 도전율은 약 $10^{-14}$S/cm로 양호한 절연성이었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.566-570
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• 2010

Electro-optic modulators based on 25 monolayer langmuir-blodgett films of vinylidene fluoride and trifluoroethylene, P(VDF-TrFE), were fabricated. The LB films were prepared by transferring the monolayers on to an ITO coated glass with a surface pressure of 5 dyne/cm by use of the langmuir-schaefer deposition method. Measurement of the electro-optic coefficient has been carried out using a simple reflection techique. The E/O coefficient was found to be 154.9 pm/V and that value remained stable for at least 50 days.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.303-311
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• 1994

Optimum conditions for the deposition of N-docosylquinolium-TCNQ ultrathin organic films using the Langmuir-Blodgett etchnique and the molecular orientation and alignment of the LB films were studied. The $\pi$-A isotherm of the N-docosylquinolium-TCNQ was measured at the air-water interface varying with the subphase temperature, subphase pH, compressing speed and amounts of solutions for spreading. The LB film was deposited under the surface pressure of 30mN.m and 45mN/m and other deposition conditions. The molecular orientation and alignment of the LB films were studied by the polarization absorption technique. The $\pi$-A isotherm showed that the stable N-docosylquinolium -TCNQ monolayer was formed on the water surface at the condition of 25$^{\circ}C$,pH 5.6, molecular density of 2.1${\times}$10S014T~2.6${\times}$10S014T/cmS02T. The LB film was deposited under the surface pressure of 45mN/m had better packing density, orientation and alignment than the film of 30mN/m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.394-395
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• 2006

본 연구에서는 Arachidic acid Langmuir-Blodgett (LB) 막의 표면이미지와 전압-전류 특성을 측정하였다. Arachidic acid는 포화지방산으로 ($CH3(CH_2)_{18}$ COOH)의 구조를 가지며, 크기가 $27.5\;{\AA}$으로 $CH_3(CH_2)_{18}$의 소수기와 COOH의 친수기로 구성되어 있어, LB Trough를 사용하여 박막제작과 분자제어가 쉽다. Chloroform을 용매로 하여 2mmol/l의 농도를 조성하여 ${\pi}$-A 등온선을 통해 기체 상태, 액체 상태, 고체 상태를 관찰하였다. LB막의 제작 및 평가에서 막의 안정성은 ${\pi}$-A곡선, AFM (Atomic force microscopy) 등을 통하여 확인 하였다. 또한 LB 막을 Metal/LB막/Metal 구조의 소자로 제작하여 전압-전류 특성을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.61-62
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• 2006

본 연구에서는 대표적인 양친매성분자인 Arachidic acid를 이용하여 박막을 제작하였으며, 층수 변화에 따른 표면이미지와 전압-전류 특성을 측정하였다. Arachidic acid 는 포화지방산으로 ($CH_3(CH_2)_{18}$ COOH)의 구조를 가지며, 크기가 $27.5{\AA}$으로 $CH_3(CH_2)_{18}$의 소수기와 COOH의 친수기로 구성되어 있어, Langmuir-Blodgett (LB) Trough을 사용하여 박막제작과 분자제어가 쉽다. Chloroform을 용매로 하여 2 mmol/l의 농도를 조성하여 ${\pi}$-A 등온선을 통해 기체 상태, 액체 상태, 고체 상태를 관찰하였다. LB 막의 제작 및 평가에서 막의 안정성은 ${\pi}$-A 곡선, AFM(Atomic force microscopy) 등을 통하여 확인하였다. 또한 LB 막을 Metal/유기물 LB막/Metal 구조의 소자로 제작하여 전압-전류 특성을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.11-14
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• 2000

This paper describes a thennally stimulated displacement current(TSDC) of polyamic acid alkylamine salts(PAAS) Langmuir-Blodgett(LB) films, which is a precursor of polyimide(PI). The TSDC measurements of PAAS LB film were performed from room temperature to about $250^{\circ}C$ and the temperature was increased at a rate of $0.2^{\circ}C/s$. This show that this is TSDC peaks at about $70^{\circ}C$ in the arachidic acid LB films, and at about $70^{\circ}C$ and $160^{\circ}C$ in the PAAS LB films. Results of this measurements indicate that one small peak at $70^{\circ}C$ is resulted from a softening of the alkyl group and the large peak at $160^{\circ}C$ is possibly due to dipole moment of C-O group in the PAAS molecule. We have calculated the vertical component of dipole moment of the P AAS LB film out of the TSDC curves. It shows that the dipole moment of PAAS LB film is about -40mD at $70^{\circ}C$ and about 200mD at $160^{\circ}C$ in the first measurement of TSDC. In the second measurement of TSDC of PAAS LB film after cooling down to room temperature, the TSDC peaks are almost disappeared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.45-48
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• 1997

Enhancing the electrical conductivity of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir-Blodgett(LB) technique has recently been attracted interest as the a method of deposition ultrathin films. We have fabricated N-docosyl-N'-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the optical and electrical conductivity. We have measured UV/visible and FT-lR spectrum. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on both temperature and incident angle, which indicates conducting species change. The in-plane electrical conductivity of 21 layers is approximately 1.37$\times$10$^{-6}$ (S/cm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.820-825
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• 1998

We deposited stearic acid LB films by using Langmuir-Blodgett (LB)method and investigated anisotropy electrical conduction characteristics by I-V measurement for horizontal direction and vertical direction. Also, we measured gad response between deposited LB films and organic gas for various temperature(0~8$0^{\circ}C$) by 9MHz At-cut quartz crystal microbalance. The LB films have electrical conduction characteristics such as semiconducting and insulating properties. The is, the conductivity of LB films for the horizontal and vertical direction is about 10\ulcornerS/cm and 10\ulcorners/cm, respectively. the frequency shift of stearic acid LB films for the organic gases depended on the mass change by the surface adsorption and the inner penetration to the sensing films. The resonant frequency shift of the quartz crystal microbalance for temperature properties of LB films is thought to the effect of the rearrangement or the damage pf LB films above the melting point and the mobility increasement of the organic gas by the temperature rising.