• Title/Summary/Keyword: LaMn$O_3$ 도핑

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Low Oxygen Pressure Growth and its Effects on Physical Properties of La0.7Ca0.3MnO3 Thin Films and Characteristics of P-N Junction in Heterostructure (La0.7Ca0.3MnO3 박막의 저산소압 증착과 물리적 특성의 영향 및 이종접합구조에서의 P-N 접합 특성)

  • Song, J.H.
    • Journal of the Korean Magnetics Society
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    • v.19 no.3
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    • pp.94-99
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    • 2009
  • We have studied the effects of oxygen partial pressure change on the physical properties of the $La_{0.7}Ca_{0.3}MnO_3$ thin films grown by Pulsed laser Deposition. Contrary to the previous reports, thin films of high curie temperature were successfully synthesized at very low oxygen partial pressure ($1.0{\times}10^{-5}$, $1.0{\times}10^{-6}Torr$). These observations indicate that the shape of plasma plume and the kinetic energy of the ablated species in it play an important role in determining the quality of samples. We also fabricated p-n heterojunction of $La_{0.7}Ca_{0.3}MnO_3$ and Nb-doped $SrTiO_3$. The current-voltage curves show rectifying behavior and, furthermore, the current responses to the applied magnetic field, indicating a potential possibility of device applications.

Structural analysis and thermal expansion property of Cu doped LSM for SOFCs (Cu가 도핑된 LSM의 구조분석과 열팽창특성 연구)

  • Noh, Tai-Min;Ryu, Ji-Seung;Kim, Jin-Seong;Jeong, Cheol-Weon;Lee, Hee-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.4
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    • pp.175-180
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    • 2011
  • The doping effect of Cu in the Sr-doped lanthan manganites (LSM) has been investigated in terms of structural analysis and thermal expansion coefficient (TEC). The $La_{0.8}Sr_{0.2}Mn_{1-x}Cu_xO_3$ ($0{\leq}x{\leq}0.3$) were prepared by solid state reaction method and their crystal structure and TEC were measured. A decrease in the lattice parameters and the TEC were observed with increase eu content, whereas they were decreased for x = 0.3. For $0{\leq}x{\leq}0.2$, the decrease of the lattice parameter and the TEC with increase Cu content were attributed to the reduction of ionic radius of Cu ions due to the presence of $Cu^{3+}$ ions. For x = 0.3, however, the increase was originated from the formation of oxygen vacancies due 10 the presence of $Cu^{2+}$ and $Mn^{4+}$.