• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2002년도 연료전지심포지움 2002논문집
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• pp.271-276
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• 2002

고체산화물 연료전지의 구성요소인 전해질의 $(La_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$계의 결정상 및 미세구조특성을 연구하였다. Mg의 첨가량이 증가할수록 Sr의 고용량도 증가하였으며 Sr의 함량이 많으면 2차상인 $LaSrGa_3O_7$상이 생성되었으며 Mg의 첨가량이 증가함에 따라서는 $LaSrGaO_4$상이 생성되었다. $LaSrGaO_4$상이 생성된 경우에는 낮은 전도도를 나타내었으며 $LaSrGa_3O_7$상의 경우에는 전기전도도에 큰 영향을 미치지 않았다. 또한 Sr과 Mg 첨가량의 증가는 grain 성장을 억제하였으며 $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$는 $1000^{\circ}C$에서 0.1S/cm 정도의 전기전도도를 나타내었다.

• 한국세라믹학회지
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• 제39권4호
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• pp.352-358
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• 2002

고체산화물 연료전지의 전해질로서 $LaGaO_3$계를 선정하여 La 대신 Sr을, Ga 대신에 Mg를 치환하여 첨가할 때 첨가량 및 소결 조건에 따라 전해질을 제조하고, 그 특성을 조사하였다. Sr과 Mg가 0.15와 0.20 mole 첨가되었을 때 Sr과 Mg가 La와Ga 자리에 동시 고용되어 (La$_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$ 단일상이 나타났고, 일부 조성에서는 $LaSrGa_3O_7$ 상과 $LaSrGaO_4$ 상이 2차상으로 나타났다. $LaSrGa_3O_7$ 상은 Sr과 Mg 첨가에 의한 상이며, $LaSrGaO_4$ 상은 액상형성에 의한 것으로 나타났으며, 또한 $LaSrGaO_4$ 상은 소결온도와 Mg 첨가량이 감소함에 따라 얻어졌다. $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ 상의 경우 소결온도를 증가함에 따라 열팽창계수는 감소하였으며, $1500^{circ}C$에서 1시간 소결한 소결체의 전기전도도는 $800^{circ}C$, 1mA에서 0.14S/cm를 나타내었다.

• 한국세라믹학회지
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• 제36권10호
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• pp.1056-1061
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• 1999

Phase formation and oxygen ion conduction of La(Ba)Ga(Mg)O3-$\delta$ system was studied, BaLaGa3O7 and BaLaGaO4 formed as a secondary phase above the solubility limit of Ba2+ in La3+ sites. The oxygen ionic conductivity of La(Ba)Ga(Mg)O3-$\delta$ was 0.1 S/cm 80$0^{\circ}C$ The activation energy of the oxygen ion conduction was dependent on temperature. This value was higher at low temperature than at high temperature.

• 한국세라믹학회지
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• 제39권4호
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• pp.359-366
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• 2002

고체산화물 연료전지의 운전온도를 낮추기 위해 구성재 중 LSGM 전해질과 LSM 양극을 합성하고, 그 특성을 조사한 후 최적 조성과 공정으로 단위전지를 제작하고 출력을 측정하였다. 전해질 조성인 $(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}와 (La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$를 $1500^{\circ}$에서 6시간 소결한 경우 두 조성 모두 $LaGaO_3$의 단일상을 형성하였고, $10∼3{\mu}m$의 결정 크기를 갖는 치밀한 미세구조를 얻었으며, 저기전도도는 $800^{\circ}$에서 0.13S/cm를 나타내었다. 양극의 경우 GNP법으로 $(La1-xSrx)MnO_3$를 합성한 경우 Sr의 양이 0.2mole일 때까지는 $LaMnO_3$ perovskite 단일상이 생성되었으며, 입자의 크기는 약 40nm였다. 단위전지는 $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ 조성으로 소결한 전해질 양면에 $(La_{0.9}Sr_{0.1})MnO_3$ 양극과 음극의 입자크기는 $1{\mu}m$ 정도였고 다공성을 나타내었다. 이때 단위전지의 출력은 $800^{\circ}$에서 약 $0.3W/cm^2$를 나타내었다

• 한국세라믹학회지
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• 제45권12호
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• pp.796-801
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• 2008

$LaGaO_3$ thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense $NiO-{Fe_3}{O_4}$ substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of $LaGaO_3$ based oxide. $LaGaO_3$ based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073K in air, the single phase of $LaGaO_3$ perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.

• 한국세라믹학회지
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• 제36권6호
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• pp.640-645
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• 1999

Recently rapid progress of electronic and telecommunication technology requires the development of new piezoelectric materials and cellular communication is more and more used in various fields. Langasite(La3Ga5SiO14) is suitable for new piezoelectric properties. Langastie can be applied as communication devices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic characteristics. So in this study Langastie(La3Ga5SiO14) single crystal with 47 mm in diameter and 25mm in length were sucessfully grown by using self-designed Czochralski system. In addition optimum growth conditions for the piezoelectric applications throughout estimation of crystal quality and frequency characteristics were investigated.

• 한국세라믹학회지
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• 제36권12호
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• pp.1364-1368
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• 1999

Langasite( La3Ga5SiO14) is suitable for new piezoelectric properties. Langasite can be applied for communication de-vices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic cha-racteristics. In this study Langasite( La3Ga5SiO14) single crystals were successfully grown by using self-designed Czo-chralski system. From the results of optical properties it was found that crystals having a high quality and higher optical transmittance were grown at atmosphere of 1 to 30 vol% of oxygen content.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.330-337
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• 2005

La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes in which Mg site was partially substituted by Fe, Co or Ni (0.05, 0.1, 0.15 at.％) were fabricated by conventional solid-state reaction and their sintered densities were above 94％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The ac complex impedance were measured at 400。C to l000。C in air and fitted with a Solatron ZView program. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes substituted by Fe, Co or Ni was higher than that of pure La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.05/Ni/sub 0.15/O/sub 3-δ/ electrolyte was 3.4×10/sup -2/ Scm/sup -1/ at 800。C and the highest value of the whole electrolytes.

• 한국결정성장학회지
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• 제11권6호
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• pp.285-289
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• 2001

본 연구에서는 Langasite 보다 우수한 압전특성을 나타낼 것으로 기대되는 같은 구조를 갖는 새로운 화학조성을 각 자리의 치환을 조사하였다. 합성된 물질은 $Ca_3TaGa_5Si_{2}O_{14}$로서 고상합성법에 의한 합성이 되었으며 이를 바탕으로 $\mu$-PD(micro-pilling-down)와 Cz법에 의해 결정성장을 시도하였다. 성장된 결합은 XRD와 EPMA를 통해 격자상수 화학조성 분포가 분석되었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.3-26
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• 1999

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.