• 한국전기화학회:학술대회논문집
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• 2002.07a
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• pp.271-276
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• 2002

고체산화물 연료전지의 구성요소인 전해질의 $(La_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$계의 결정상 및 미세구조특성을 연구하였다. Mg의 첨가량이 증가할수록 Sr의 고용량도 증가하였으며 Sr의 함량이 많으면 2차상인 $LaSrGa_3O_7$상이 생성되었으며 Mg의 첨가량이 증가함에 따라서는 $LaSrGaO_4$상이 생성되었다. $LaSrGaO_4$상이 생성된 경우에는 낮은 전도도를 나타내었으며 $LaSrGa_3O_7$상의 경우에는 전기전도도에 큰 영향을 미치지 않았다. 또한 Sr과 Mg 첨가량의 증가는 grain 성장을 억제하였으며 $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$는 $1000^{\circ}C$에서 0.1S/cm 정도의 전기전도도를 나타내었다.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.352-358
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• 2002

The variations of the properties of Sr and Mg added $LaGaO_3$ system electrolyte with the amount of the additive and the sintering condition were studied. Main phase was (La$_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$ phase for each compositions and the single phases $(La_{0.85}Sr_{0.15})(Ga_{0.85}Mg_{0.15})O_{3-\delta},(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ and $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O{3-\delta}$ were obtained with the decrease in the sintering temperature and Mg addition. Thermal expansion coefficient of the $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ decreased with the increase in the sintering temperature. Electric conductivity of electrolyte sintered at $1500^{circ}C$ for 1h was 0.14 S/cm at $800^{circ}C$ with 1 mA.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1056-1061
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• 1999

Phase formation and oxygen ion conduction of La(Ba)Ga(Mg)O3-$\delta$ system was studied, BaLaGa3O7 and BaLaGaO4 formed as a secondary phase above the solubility limit of Ba2+ in La3+ sites. The oxygen ionic conductivity of La(Ba)Ga(Mg)O3-$\delta$ was 0.1 S/cm 80$0^{\circ}C$ The activation energy of the oxygen ion conduction was dependent on temperature. This value was higher at low temperature than at high temperature.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.359-366
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• 2002

The purpose of this study is to investigate the properties of LSGM electrolyte and LSM cathode. The unit cell based on the optimum conditions and processing for high performance was fabricated and measured. The single phase of $LaGaO_3$ was obtained on sintering at $1500^{\circ}$ for 6h with composition of $(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}와 (La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ and $(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$. The grain size of the sintered body was about $10∼30{\mu}m$ and electrical conductivity was 0.13 S/cm measured at $800^{\circ}$. The single phase of $LaMnO_3$ structure in $(La1-xSrx)MnO_3$ system was obtained at x=0∼0.2 and the particle size of the synthesized powder was about 40 nm. The unit cell was prepared by firing at $1200^{\circ}$ for 1h with $(La_{0.9}Sr_{0.1})MnO_3$ cathode and 0.9NiO-0.1YSZ anode screen-printed on surfaces of $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ electrolyte. The grain size of the electrode was close to $1{\mu}m$ and the electrode had porous structure. The maximum power density of unit cell showed $0.3W/cm^2$ at $800^{\circ}$.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.796-801
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• 2008

$LaGaO_3$ thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense $NiO-{Fe_3}{O_4}$ substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of $LaGaO_3$ based oxide. $LaGaO_3$ based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073K in air, the single phase of $LaGaO_3$ perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.640-645
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• 1999

Recently rapid progress of electronic and telecommunication technology requires the development of new piezoelectric materials and cellular communication is more and more used in various fields. Langasite(La3Ga5SiO14) is suitable for new piezoelectric properties. Langastie can be applied as communication devices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic characteristics. So in this study Langastie(La3Ga5SiO14) single crystal with 47 mm in diameter and 25mm in length were sucessfully grown by using self-designed Czochralski system. In addition optimum growth conditions for the piezoelectric applications throughout estimation of crystal quality and frequency characteristics were investigated.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1364-1368
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• 1999

Langasite( La3Ga5SiO14) is suitable for new piezoelectric properties. Langasite can be applied for communication de-vices due to intermediate piezoelectric properties which are similar to those of quartz and LiTaO3 in its acoustic cha-racteristics. In this study Langasite( La3Ga5SiO14) single crystals were successfully grown by using self-designed Czo-chralski system. From the results of optical properties it was found that crystals having a high quality and higher optical transmittance were grown at atmosphere of 1 to 30 vol% of oxygen content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.330-337
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• 2005

La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes in which Mg site was partially substituted by Fe, Co or Ni (0.05, 0.1, 0.15 at.％) were fabricated by conventional solid-state reaction and their sintered densities were above 94％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The ac complex impedance were measured at 400。C to l000。C in air and fitted with a Solatron ZView program. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/-based solid electrolytes substituted by Fe, Co or Ni was higher than that of pure La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.2/O/sub 3-δ/. The electrical conductivity of La/sub 0.8/Sr/sub 0.2/Ga/sub 0.8/Mg/sub 0.05/Ni/sub 0.15/O/sub 3-δ/ electrolyte was 3.4×10/sup -2/ Scm/sup -1/ at 800。C and the highest value of the whole electrolytes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.285-289
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• 2001

We investigated that each site was substituted by new chemical components in Langasite ($La_3Ga_5/SiO_{14}$)-type structure with superior piezoelectric characteristics than $La_3Ga_5/SiO_{14}$. In this study $Ca_3TaGa_5Si_{2}O_{14}$ was synthesized by soilid-state reaction and grown by the $\mu$-PD(micro-pilling-down)and Cz technique. Lattice parameter and chemical composition was investigated by XRD and EPMA respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.3-26
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• 1999

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.