• Journal of Sensor Science and Technology
• /
• v.30 no.2
• /
• pp.114-118
• /
• 2021

In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.1
• /
• pp.98-106
• /
• 2009

This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.4
• /
• pp.258-262
• /
• 2004

Storage over Ethernet (SoE) is a network storage architecture that allows direct attachment of existing ATA/ATAPI devices to Ethernet without a separate server. Unlike SAN, no server computer intervenes between the storage and the client hosts. We propose a SoE disk controller (SoEDC) amenable to low-cost, single-chip implementation that processes a simplified L3/L4 protocol and converts commands between Ethernet and ATA/ATAPI, while the rest of the complex tasks are performed by the remote hosts. Thanks to simple architecture and protocol, the SoEDC implemented on a single $4mm{\times}4mm$ chip in 0.18um CMOS technology achieves maximum throughput of 55MB/s on Gigabit Ethernet, which is comparable to that of a high-performance disk storage locally attached to a host computer.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.7 no.1
• /
• pp.58-68
• /
• 1998

Advantages of adhesively bonded joints and techniques of weight reduction have led to increasing use of structural adhesives such as LSI(large scale integration) package, automobile, aircraft in the various industries. In spite of such wide applications of adhesively bonded joints, the evaluation method of bonding strength has not been established. Stress singularity occurs at the interface edges of adhesively bonded joints and it is required to analyze it. In this paper, the stress singularity using 2-dimensional elastic boundary element method (BEM) with the changes of the lap length and adhesive for single lap joint was analyzed, and experiments of strength evaluation were carried out. As the results, the evaluating method of bonding strength considering stress singularity at interface edges of adhesively bonded joints and stress intensity factor of interface crack have been proposed in static and fatigue test.

• Proceedings of the Korea Institute of Convergence Signal Processing
• /
• 2005.11a
• /
• pp.321-326
• /
• 2005

근거리 통신망 LAN(Local Area Network)는 일반적으로 회사, 학교, PC방에서 널리 사용하는 통신 방식으로 Serial, USB 통신방식과 더불어 반드시 습득해야 할 프로토콜 중의 하나로서 앞으로는 이러한 LAN 통신방식을 이용하여 모든 가전기기, 회사 내의 보안장치 등이 모두 유무선 복합적으로 연결되어 휴대폰 또는 PDA로 상태변화를 실시간으로 확인이 가능한 시대가 올 것이다. 본 논문에서는 LAN LSI인 W3100A를 분석해 보고, MCU(Atmega128)과 Phycei ver인 RTL8201과 Interface하여 회로를 구성한 다음, TCP Client 역할을 위한 MCU Programming을 하여 .NET으로 Server 프로그램을 만들어 Server에 데이터를 전송한다. 이와 같이 MCU(Atmega128)을 사용하여 들어온 데이터를 Ethernet Network상으로 데이터의 전송을 가능하게 하는 Ethernet 통신 시스템을 연구하였다.

• Information Display
• /
• v.5 no.1
• /
• pp.25-30
• /
• 2004

Poly-Si TFT(Thin Film Transistor) technology are reviewed and discussed. Poly-Si TFTs fabricated on glass using low-temperature process were studied extensively for the application to LCD (Liquid Crystal Display) as well as to OLED(Organic Light Emitting Diode) Display. Currently, one of the application targets of the poly-Si TFT is emphasized on the highly functional SOG(System on Glass). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of AM FPD(Active Matrix Flat Panel Display) as well as of Si LSI, which will arise a peculiar issue of uniformity for the device performance. Some approaches such as nucleation control of the grain seed or lateral grain growth have been tried, so far.

• Journal of the Korean Ceramic Society
• /
• v.49 no.4
• /
• pp.287-294
• /
• 2012

Ceramic Matrix Composites (CMCs) represent a class of non-brittle refractory materials for harsh and extreme environments in aerospace and other applications. The quasi-ductility of these structural materials depends on the quality of the interface between the matrix and the fiber surface. In this study, a manufacture route is described where in contrast to most other processes no additional fiber coating is used to adjust the fiber/matrix interfaces in order to obtain damage tolerance and fracture toughness. Adapted microstructures of uncoated carbon fiber preforms were developed to permit the rapid infiltration of molten alloys and the subsequent reaction with the carbon matrix. Furthermore, any direct reaction between the melt and fibers was minimized. Using pure silicon as the reactive melt, C/SiC composites were manufactured with an aim of employing the resulting composite for friction applications. This paper describes the formation of the microstructure inside the C/C preform and resulting C/C-SiC composite, in addition to the MAX phases.

• ETRI Journal
• /
• v.7 no.4
• /
• pp.11-14
• /
• 1985

A polysilicon self-aligned bipolar n-p-n transistor structure is described, which can be used in high speed and high packing density LSI circuits The emitter of this transistor is separated less than $0.4\mum$ with base contact by polysilicon self-align technology. Through all the process, the active region of this device is not damaged. therefore a high performance device is obtained. Using the transistor with $3.0\mum$ design rules, a CML ring oscillator has per-gate minimum propagation delay time of 400 ps at 2.7 mW power consumption condition.

• 제어로봇시스템학회:학술대회논문집
• /
• 2004.08a
• /
• pp.570-573
• /
• 2004

This paper present a distributed RC lines (URCs) oscillator with sinusoidal output. The frequency of oscillator can be controlled and adjustable by varying an one pole amplifier. The circuit incorporated an gain controller loop for amplitude stabilization with low distortion. The realization of simulation and experimental results are in reasonably good agreement with the theoretical , and very low harmonic distortion. In this circuit can be suitable for LSI process fabrication and the circuit application in electronic communications system.

• Proceedings of the IEEK Conference
• /
• 2002.07a
• /
• pp.137-140
• /
• 2002

In this paper, a new algorithm for two-dimensional (2-D) finite-difference time-domain (FDTD) method is presented. By this new method, the maximum time step size can be increased over the Courant-Friedrich-Levy (CFL) condition restraint. This new algorithm is adapted from an Alternating-Direction Implicit FDTD (ADI-FDTD) method. However, unlike the ADI-FDTD algorithm. the alternation is performed with respect to the blocks of fields rather than with respect to each respective coordinate direction. Moreover. this method can be efficiently simulated with parallel computation. and it is more efficient than the conventional FDTD method in terms of CPU time. Numerical formulations are shown and simulation results are presented to demonstrate the effectiveness and efficiency of our proposed method.