• Title/Summary/Keyword: LOW LIGHT

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Dimming Control of LED Light Using Pulse Frequency Modulation in Visible Light Communication

  • Lee, Seong-Ho
    • Journal of information and communication convergence engineering
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    • v.19 no.4
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    • pp.269-275
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    • 2021
  • Light-emitting diodes (LEDs) are modulated using a square wave pulse sequence for flicker prevention and dimming control in visible light communication (VLC). In a VLC transmitter, the high and low bits of the non-return-to-zero (NRZ) data are converted to two square waves of different frequencies, which continue for a finite time defined by the fill ratio in an NRZ bit time. As the average optical power was kept constant and independent of data transmission, the LED was flicker-free. Dimming control is carried out by changing the fill ratio of the square wave in the NRZ bit time. In the experiments, the illumination of the LED light was controlled in the range of approximately 19.2% to 96.2% of the continuous square wave modulated LED light. In the VLC receiver, a high-pass filter combined with a latch circuit was used to recover the transmitted signal while preventing noise interference from adjacent lighting lamps.

A Study on the Characteristics of Low Temperature Calcined Phosphor Paste (저온소성 형광체 페이스트의 특성 연구)

  • Lee, Dong-Wook;Lee, Mi-Young;Ahn, Suk-Chul;Nam, Su-Yong
    • Clean Technology
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    • v.14 no.1
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    • pp.14-20
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    • 2008
  • In this study we have manufactured and characterized the low temperature calcined phosphor paste that can be used as a flat light source for LCD BLU. For the phosphor paste, the low temperature calcined acryl resin was used as the binder. From the result of thermal decomposition measurement, residual carbonaceous materials was found to be less than 0.1 wt% at $400^{\circ}C$. A flat light source device that was made by screen printing using the manufactured paste showed a near 100% luminous efficiency compared to the luminance of the phosphor.

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Characteristics of organic light-emitting diodes with AI cathode prepared by ITS system (TTS로 성막한 Al 캐소드를 가진 유기발광소자의 특성 분석)

  • Moon, Jong-Min;Lee, Sang-Hyun;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.74-75
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    • 2007
  • We report on the characteristics of organic light-emitting diodes with Al cathode deposited by specially designed twin target sputter(TTS) system. It was found that the Al cathode films grown by TTS system were amorphous structure with nanocrystallines due to low substrate temperature during sputtering process. Effective confinement of high-density plasma between two Al targets lead to low temperature sputtering process on organic layer. Moreover, organic light-emitting diodes with Al cathode deposited by TTS system exhibited low leakage current density of $4{\times}10^{-6}\;mA/cm2$ at -6 V indicating plasma damage due to bombardment of energetic particles such as ions and $\gamma$-electrons was effectively restricted in the ITS system. Sputtering method using ITS system is expected to be applied in organic electronics and flexible displays due to its low temperature and plasma damage free deposition process.

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A Noisy Infrared and Visible Light Image Fusion Algorithm

  • Shen, Yu;Xiang, Keyun;Chen, Xiaopeng;Liu, Cheng
    • Journal of Information Processing Systems
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    • v.17 no.5
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    • pp.1004-1019
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    • 2021
  • To solve the problems of the low image contrast, fuzzy edge details and edge details missing in noisy image fusion, this study proposes a noisy infrared and visible light image fusion algorithm based on non-subsample contourlet transform (NSCT) and an improved bilateral filter, which uses NSCT to decompose an image into a low-frequency component and high-frequency component. High-frequency noise and edge information are mainly distributed in the high-frequency component, and the improved bilateral filtering method is used to process the high-frequency component of two images, filtering the noise of the images and calculating the image detail of the infrared image's high-frequency component. It can extract the edge details of the infrared image and visible image as much as possible by superimposing the high-frequency component of infrared image and visible image. At the same time, edge information is enhanced and the visual effect is clearer. For the fusion rule of low-frequency coefficient, the local area standard variance coefficient method is adopted. At last, we decompose the high- and low-frequency coefficient to obtain the fusion image according to the inverse transformation of NSCT. The fusion results show that the edge, contour, texture and other details are maintained and enhanced while the noise is filtered, and the fusion image with a clear edge is obtained. The algorithm could better filter noise and obtain clear fused images in noisy infrared and visible light image fusion.

Edge Detection based on Contrast Analysis in Low Light Level Environment (저조도 환경에서 명암도 분석 기반의 에지 검출)

  • Park, Hwa-Jung;Kim, Nam-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.05a
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    • pp.437-440
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    • 2022
  • In modern society, the use of the image processing field is increasing rapidly due to the 4th industrial revolution and the development of IoT technology. In particular, edge detection is widely used in various fields as an essential preprocessing process in image processing applications such as image classification and object detection. Conventional methods for detecting an edge include a Sobel edge detection filter, a Roberts edge detection filter, a Prewitt edge detection filter, Laplacian of Gaussian (LoG), and the like. However, existing methods have the disadvantage of showing somewhat insufficient performance of edge detection characteristics in a low-light level environment with low contrast. Therefore, this paper proposes an edge detection algorithm based on contrast analysis to increase edge detection characteristics even in low-light level environments.

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Low-coherence non-scanning michelson interferometry using visible broadband light source (가시광 영역의 저간섭성 광원을 이용한 마이겔슨 간섭계)

  • 송민호;이병호
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.10
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    • pp.160-167
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    • 1996
  • A new pathlength deviation detection technique which is composed of michelson interferometer is described and verified experimentally. The technique uses a sub-threshold biased visible laser diode of 20$\mu$m coherence length as a low-coherent light source. And for zeroth-order fringe(which is the largest among fringes) identification we used a piezoelectric transducer with a large modulation smplitude, which enables without the need of constant velocity scanning, to distinguish reflection surfaces separated by more than 10$\mu$m with a resolution of less than half-wavelength.

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Hole-Trapping in Iodine-Doped Pentacene Films at Low Temperatures

  • Yun, W.J.;Cho, J.M.;Lee, J.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.70-73
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    • 2006
  • Pentacene films, grown on polyethylene terephthalate (PET) substrates, were doped with Iodine. ESR measurements were made for the films in the temperature range of 100-300 K. Two regimes of doping stages were discernible: a light (intercalation) doping regime and a heavy doping regime. The light doping regime was concluded to be dominated by localized holes that were trapped at low temperatures, which indicated trap states near the valence band edge.

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P-OLED Microdisplay Technology

  • Underwood, Ian;Buckley, Alastair;Yates, Chris
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.105-110
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    • 2006
  • The highly integrated nature of polymer based organic light emitting diode (POLED) microdisplay technology, coupled with low voltage and low power electroluminescent light generation, combine to offer a very promising technology for use in portable and personal electronics products. We briefly describe the technology before discussing how to engineer the color gamut using whiteemitting polymer materials, microcavity device structure and color filter absorbance.

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Characterization of amplified spontaneous emission light source from an $Er^{3+}$/$Tm^{3+}$co-doped silica fiber ($Er^{3+}$$Tm^{3+}$이 복합 첨가된 실리카 광섬유의 ASE 광원에 대한 특성 평가)

  • Jeong, Hoon;Oh, K.
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.96-97
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    • 2000
  • Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

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Methods to Measure the Critical Dimension of the Bottoms of Through-Silicon Vias Using White-Light Scanning Interferometry

  • Hyun, Changhong;Kim, Seongryong;Pahk, Heuijae
    • Journal of the Optical Society of Korea
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    • v.18 no.5
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    • pp.531-537
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    • 2014
  • Through-silicon vias (TSVs) are fine, deep holes fabricated for connecting vertically stacked wafers during three-dimensional packaging of semiconductors. Measurement of the TSV geometry is very important because TSVs that are not manufactured as designed can cause many problems, and measuring the critical dimension (CD) of TSVs becomes more and more important, along with depth measurement. Applying white-light scanning interferometry to TSV measurement, especially the bottom CD measurement, is difficult due to the attenuation of light around the edge of the bottom of the hole when using a low numerical aperture. In this paper we propose and demonstrate four bottom CD measurement methods for TSVs: the cross section method, profile analysis method, tomographic image analysis method, and the two-dimensional Gaussian fitting method. To verify and demonstrate these methods, a practical TSV sample with a high aspect ratio of 11.2 is prepared and tested. The results from the proposed measurement methods using white-light scanning interferometry are compared to results from scanning electron microscope (SEM) measurements. The accuracy is highest for the cross section method, with an error of 3.5%, while a relative repeatability of 3.2% is achieved by the two-dimensional Gaussian fitting method.