• 제목/요약/키워드: LNO

검색결과 20건 처리시간 0.023초

Mn,Ce:$LiTaO_3$의 성장과 이색을 이용한 홀로그램 저장특성 (Growth of Mn,Ce:$LiTaO_3$ and two-color holographic recording)

  • 이선균;;임기수;주기태
    • 한국광학회:학술대회논문집
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    • 한국광학회 2002년도 하계학술발표회
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    • pp.96-97
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    • 2002
  • 불순물을 이용한 비휘발성 홀로그램저장[1,2]은 기존의 열정착을 광정착으로 대치하는 방법으로서 여러 가지 희토류 혹은 전이금속이온을 첨가한 LiMbO$_3$ (LNO) 단결정 재료에서 시도되고 있다. 대표적인 재료로서 Mn,Fe:LNO 가 있으나 Mn,Ce:LNO, Cu,Co:LNO, Tb,Fe:LNO 등도 연구되고 있고 Stoichiometric LNO 경우엔 Pr:LNO, Er:LNO, Tb:LNO 등이 연구되고 있다. 그 외에 Mn:YAlO$_3$도 약하긴 하지만 비휘발성이 최근 보고되었다. (중략)

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LaNiO3의 (100)배향성이 Pb(Zr,Ti)O3 박막의 결정성장과 강유전성에 미치는 영향 (Effects of (100) Orientation of LaNiO3 on the Growth and Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Films)

  • 박민석;서병준;유영배;문병기;손세모;정수태
    • 한국전기전자재료학회논문지
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    • 제18권4호
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    • pp.338-343
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    • 2005
  • Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 %), those on a randomly oriented LNO show a random crystal orientation (F=60 %). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.

제조 공정을 달리한 LNO 전극에 코팅된 PZT 박막의 배향성 ((100) orientation of PZT thin films coated on the LNO electrode using a different manufacturing process)

  • 서병준;문병기;김강언;정수태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.916-919
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    • 2004
  • This paper studied about the (100) orientation of PZT thin films coated on the LNO electrode using a different thermal annealing. The thermal annealing method is divided into two things. The one is the method transferring heat to only the lower substrate and another is transferring heat to all directions. Orientation factor of PZT in the method of transferring heat to only the lower substrate was F=99% in the thermal annealing of the LNO. Orientation factor of PZT was F=67% in the method of transferring heat to all directions.

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In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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초음파-광음향 융합 영상을 위한 투명 초음파 변환기 (Optically transparent ultrasound transducers for combined ultrasound and photoacoustic imaging: A review)

  • 박성훈;장진호
    • 한국음향학회지
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    • 제42권5호
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    • pp.441-451
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    • 2023
  • 초음파 변환기는 광음향 및 초음파 영상 조합과 영상 평가에 있어 필수 구성 요소이다. 그러나 기존의 초음파 변환기는 불투명하여 광음향 영상을 획득하기 위해서는 광이 초음파 변환기를 우회 해야한다. 동축 정렬이 없다면 광 도달 영역이 제한되고 이를 해결하기 위해 복잡한 구성으로 시스템의 부피가 커지는 문제가 있다. 이러한 문제점을 극복하기 위해 광학적으로 투명한 초음파 변환기를 개발하기 위해 다양한 접근 방법이 연구되었다. 기존의 불투명한 초음파 변환기와 다르게 광학적으로 투명한 초음파 변환기는 특정 압전소자와 용도에 맞는 다양한 제작 방법이 존재한다. 본 연구에서 압전소자 기반의 투명 초음파 변환기에 사용되는 재료로 Lithium Niobate(LNO), Lead Magnesium Niobate-Lead Titanate(PMN-PT), Polyvinylidene Difluoride(PVDF)를 사용한 결과를 비교하였다. LNO는 투명 초음파 변환기에서 많이 사용되는 압전소자이고, PMN-PT는 LNO보다 높은 송수신율로 최근 활발히 연구되고 있다. 기존 투명 변환기는 광음향 해상도보다 초음파 해상도가 낮지만, 최근 PVDF를 사용하여 높은 초음파 해상도의 투명 집속초음파 변환기를 제작하고 있다. 이러한 투명 초음파 변환기 제작 결과에 대한 비교 분석을 수행하였다.

$Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ 박막의 구조 및 강유전 특성에 미치는 $LaNiO_3$전극의 영향 (Effect of $LaNiO_3$ electrodes on Structural and Ferroelectric Proerties of $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ Thin films)

  • 김경태;김창일;이철인;김태형
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.75-78
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    • 2004
  • $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

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Pt와 $LaNiO_3$ 전극에 대한 PZT(53/47) sol-gel 막의 전기적 특성 (Electrical properties of PZT films on Pt and $LaNiO_3$ electrode by using sol-gel method)

  • 서병준;여기호;류지구;김강언;정수태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.641-643
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    • 2003
  • The ferroelectric properties of PZT(53/47) thin film was investigated by methoxy enthanol solution based on sol-gel method. The thickness of each layer by spincoating 0.25M sol at one time was $0.1{\mu}m$ and crack-free film was formed. $LaNiO_3/Si(100)$ electrode and $Pt/Ti/SiO_2/Si(100)$ electrode was coated by PZT sol at several times. PZT orientation was confirmed as a method of XRD and coercive field(Ec) as well as remnant polarization(Pr) was investigated from hysterisis curve. As a result of XRD analysis, we can know that the orientation of on PZT/LNO/Si(100) is better than on $Pt/Ti/SiO_2/Si(100)$. The remnant polarization(Pr) in LNO electrode was $87.5{\mu}C/cm^2$ and $39.8{\mu}C/cm^2$ in Pt. From this figures, it is investigated that the Pr in LNO electrode was better than in Pt.

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초고주파 응용을 위한 (100) 방향으로 성장된 PST / $LaNiO_3$박막의 구조적, 유전적 특성 (Dielectric and Structural properties of highly oriented $PST/LaNiO_3$ Thin Films for Microwave application)

  • 엄준철;이성갑;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.648-651
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    • 2004
  • Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

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전구체 공정부산물 LNO(Li2NiO2)계 양극활물질로부터 탄산리튬 및 니켈 회수연구 (Recoverty of Lithium Carbonate and Nickel from Cathode Active Material LNO(Li2NiO2) of Precursor Process Byproducts)

  • 표재중;왕제필
    • 자원리싸이클링
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    • 제28권4호
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    • pp.30-36
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    • 2019
  • 본 연구는 폐 리튬이온전지의 양극활물질인 LNO($Li_2NiO_2$) 공정부산물로부터 $CO_2$ 열반응 공정을 통하여 Li 분말을 회수하였다. Li 분말을 회수하는 공정은 $CO_2$ 주입량이 300 cc/min인 분위기에서 $600^{\circ}C$, 1 min 유지하여 $Li_2NiO_2$ 상을 $Li_2CO_3$상과 NiO상으로 상분리 시켰다. 이 후 회수한 시료:증류수 = 1:50 무게비로 수 침출 후 감압 여과를 통해 용액에서 $Li_2CO_3$, 여과지에서 NiO 분말을 회수하였다. Ni 순도를 높이기 위해 $H_2$ 분위기에서 3시간 유지하여 NiO에서 Ni로 환원하였다. 위와 같은 공정을 통해 회수한 탄산리튬 용액의 Li의 농도 2290 ppm, Li의 회수율은 92.74%를 달성하였고 Ni은 최종적으로 순도는 90.1%, 회수율 92.6%의 분말을 제조하였다.

Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors and Their Micro-patterning by using SAM

  • Suzuki, Hisao
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.907-912
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    • 2005
  • Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

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