• 제목/요약/키워드: LED chip

검색결과 293건 처리시간 0.04초

Implementation of Non-Contact Gesture Recognition System Using Proximity-based Sensors

  • Lee, Kwangjae
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.106-111
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    • 2020
  • In this paper, we propose the non-contact gesture recognition system and algorithm using proximity-based sensors. The system uses four IR receiving photodiode embedded on a single chip and an IR LED for small area. The goal of this paper is to use the proposed algorithm to solve the problem associated with bringing the four IR receivers close to each other and to implement a gesture sensor capable of recognizing eight directional gestures from a distance of 10cm and above. The proposed system was implemented on a FPGA board using Verilog HDL with Android host board. As a result of the implementation, a 2-D swipe gesture of fingers and palms of 3cm and 15cm width was recognized, and a recognition rate of more than 97% was achieved under various conditions. The proposed system is a low-power and non-contact HMI system that recognizes a simple but accurate motion. It can be used as an auxiliary interface to use simple functions such as calls, music, and games for portable devices using batteries.

고효율 고출력 적색 광양자테 레이저 어레이 (High-efficiency High-power Red PQR Laser Array)

  • 김창훈;신미향;김영천;장영흡;채광현;권오대;성승기;한성홍
    • 한국광학회:학술대회논문집
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    • 한국광학회 2008년도 하계학술발표회 논문집
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    • pp.317-318
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    • 2008
  • High-efficiency high-power red PQR (photonic Quantum Ring) lasers with low threshold currents have been fabricated for low cost and low power consumption, whose structure is based upon high-power LED epi-wafers modified for vertically dominant PQR helix resonance. Preliminary experimental results are very promising for panel-less PQR laser chip TV applications.

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저유전율 물질인 Methylsilsesquioxane의 반응 이온 식각 공정 (Reactive Ion Etching Process of Low-K Methylsisesquioxane Insulator Film)

  • 정도현;이용수;이길헌;김대엽;김광훈;이희우;최종선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.173-176
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    • 1999
  • Continuing improvement of microprocessor performance involves in the devece size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. Becase of pattering MSSQ (Methylsilsequioxane), we use RIE(Reactive ton Etching) which is a good anisotrgpy. In this study, according as we control a flow rate of CF$_4$/O$_2$ gas, RF power, we analysis by using ${\alpha}$ -step, SEM and AFM,

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합판 정재단 부산물을 중층 Core로 이용한 복합보드의 물리·기계적 성질에 관한 고찰 (The Study on Physical and Mechanical Properties of Composite Board, Using Byproduct of Plywood for Core Layer)

  • 최송규;피덕원;강석구
    • Journal of the Korean Wood Science and Technology
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    • 제41권6호
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    • pp.490-496
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    • 2013
  • 폐목재의 재활용으로 인한 보드의 물리 기계적 특성이 하락하는 경향이 있다. 그 원인으로는 가공되어 있던 재료를 재활용함에 있어 그 형상이 불균질하고 기존의 접착제 성분과 이물질로 인한 보드 품질의 불균일과 저하를 초래한다. 또한 접착제에 포함되어 있는 포름알데히드로 인해 높은 방산량을 가지게 된다. 이러한 제품의 질적 하락이 수입되는 파티클보드와의 가격 및 품질 경쟁력 약화로 이어져 국내 보드 산업의 문제점으로 대두되고 있다. 따라서 본 연구에서는 최근 파티클보드의 원재료로 사용되고 있는 합판 정재단 부산물을 이용한 보드를 제조하고 각각의 제조 조건별 물리 기계적 특성을 평가하였다. 그 평가결과로 베니어 적층 복합보드를 EMDI 수지를 이용하여 4~16 mesh의 일반적인 chip 크기로 중층을 제작했을 때 휨강도가 57.7 $N/mm^2$로 OSB 측정결과 26.8 $N/mm^2$에 비해 215% 높은 휨강도를 나타냈으며 7.1~17.3%의 두께팽창률은 내수성을 지닌 보드로서 적합함을 보였다. 또한 0.7 ppm의 포름알데히드 방산량은 E1등급의 평균값 1.5 ppm과 E0 등급 최대값 0.7 ppm의 조건에 충족하며 이러한 결과는 바닥 깔개용 OSB를 대체 가능할 것으로 사료된다.

자외선 수직형 LED 제작을 위한 Indium Tin Oxide 기반 반사전극 (Indium Tin Oxide Based Reflector for Vertical UV LEDs)

  • 정기창;이인우;정탁;백종협;하준석
    • 한국재료학회지
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    • 제23권3호
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    • pp.194-198
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    • 2013
  • In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of 50 nm was deposited by two different methods, sputtering and e-beam evaporation. From the measurement of the optical reflection, we obtained 70% reflectance at a wavelength of 382 nm by means of sputtering, while only 30% reflectance resulted when using the e-beam evaporation method. Also, the light output power of a $1mm{\times}1mm$ vertical chip created with the sputtering method recorded a twofold increase over a chip created with e-beam evaporation method. From the measurement of the root mean square (RMS), we obtained a RMS value 1.3 nm for the ITO layer using the sputtering method, while this value was 5.6 nm for the ITO layer when using the e-beam evaporation method. These decreases in the reflectance and light output power when using the e-beam evaporation method are thought to stem from the rough surface morphology of the ITO layer, which leads to diffused reflection and the absorption of light. However, the turn-on voltage and operation voltage of the two samples showed identical results of 2.42 V and 3.5 V, respectively. Given these results, we conclude that the two ITO layers created by different deposition methods showed no differences in the electric properties of the ohmic contact and series resistance.

고연색 백색 광원용 BaSi2O2N2:Eu 형광체의 광학·구조 특성 분석 (Optical and Structural Analysis of BaSi2O2N2:Eu Green Phosphor for High-Color-Rendering Lighting)

  • 이성훈;강태욱;강현우;정용석;김종수;허훈
    • 한국재료학회지
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    • 제29권7호
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    • pp.437-442
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    • 2019
  • Green $BaSi_2O_2N_2:0.02Eu^{2+}$ phosphor is synthesized through a two-step solid state reaction method. The first firing is for crystallization, and the second firing is for reduction of $Eu^{3+}$ into $Eu^{2+}$ and growth of crystal grains. By thermal analysis, the three-time endothermic reaction is confirmed: pyrolysis reaction of $BaCO_3$ at $900^{\circ}C$ and phase transitions at $1,300^{\circ}C$ and $1,400^{\circ}C$. By structural analysis, it is confirmed that single phase [$BaSi_2O_2N_2$] is obtained with Cmcm space group of orthorhombic structure. After the first firing the morphology is rod-like type and, after the second firing, the morphology becomes round. Our phosphor shows a green emission with a peak position of 495 nm and a peak width of 32 nm due to the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ion. An LED package (chip size $5.6{\times}3.0mm$) is fabricated with a mixture of our green $BaSi_2O_2N_2$, and yellow $Y_3Al_5O_{12}$ and red $Sr_2Si_5N_8$ phosphors. The color rendering index (90) is higher than that of the mixture without our green phosphor (82), which indicates that this is an excellent green candidate for white LEDs with a deluxe color rendering index.

RFID가 내장된 스마트 옷걸이를 이용한 의류 관리 시스템 (Clothing Management System Using the Smart Hanger Embedded RFID)

  • 정성부
    • 전자공학회논문지
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    • 제51권8호
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    • pp.185-194
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    • 2014
  • 본 논문에서는 스마트 옷걸이를 이용한 의류 관리 시스템을 제안하였다. 제안하는 시스템은 스마트 옷걸이, 베이스 모듈, 서버 등으로 구성되며, 스마트 옷걸이는 MCU, LED, RFID 리더기, RF칩, 링센서, 밧데리 등으로 구성된다. 제안하는 시스템은 스마트 옷걸이가 의류에 부착된 RFID 태그를 읽어 무선으로 서버에 전송하면 서버와 연결된 베이스 모듈은 스마트 옷걸이와 통신을 하고 서버에 정보를 전송한다. 서버에서는 DB를 통해 의류를 관리하고 웹페이지 및 스마트폰을 통해 각종 정보를 표시할 수 있다. 제안한 시스템의 유용성을 확인하기 위하여 옷걸이를 많이 사용하는 의류 매장과 세탁소 관리시스템에 대하여 실험을 하였다. 스마트 옷걸이의 성능 실험으로 제안한 저전력 알고리즘을 적용하여 전류 소모량의 감소를 확인하고 배터리 수명을 예측할 수 있었다. 의류 매장 관리시스템은 소비자의 편리성과 판매량 증가를 증대 시킬 수 있다. 세탁소 관리 시스템은 대량의 세탁물 분류의 효율성과 소비자의 편리성을 증대 시킬 수 있다.

Effect of Lu3Al5O12:Ce3+ and (Sr,Ca)AlSiN3:Eu2+ Phosphor Content on Glass Conversion Lens for High-Power White LED

  • Lee, Hyo-Sung;Hwang, Jong Hee;Lim, Tae-Young;Kim, Jin-Ho;Jeon, Dae-Woo;Jung, Hyun-Suk;Lee, Mi Jai
    • 한국세라믹학회지
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    • 제52권4호
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    • pp.229-233
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    • 2015
  • Currently, the majority of commercial white LEDs are phosphor converted LEDs made of a blue-emitting chip and YAG yellow phosphor dispersed in organic silicone. However, silicone in high-power devices results in long-term performance problems such as reacting with water, color transition, and shrinkage by heat. Additionally, yellow phosphor is not applicable to warm white LEDs that require a low CCT and high CRI. To solve these problems, mixing of green phosphor, red phosphor and glass, which are stable in high temperatures, is common a production method for high-power warm white LEDs. In this study, we fabricated conversion lenses with LUAG green phosphor, SCASN red phosphor and low-softening point glass for high-power warm white LEDs. Conversion lenses can be well controlled through the phosphor content and heat treatment temperature. Therefore, when the green phosphor content was increased, the CRI and luminance efficiency gradually intensified. Moreover, using high heat treatment temperatures, the fabricated conversion lenses had a high CRI and low luminance efficiency. Thus, the fabricated conversion lenses with green and red phosphor below 90 wt% and 10 wt% with a sintering temperature of $500^{\circ}C$ had the best optical properties. The measured values for the CCT, CRI and luminance efficiency were 3200 K, 80, and 85 lm/w.

전해채취에 의한 Gallium의 정제기술 (Method for Making High Purity Gallium by Electrowinning)

  • 최영종;황수현;전덕일;한규성
    • 자원리싸이클링
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    • 제23권6호
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    • pp.63-67
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    • 2014
  • 갈륨은 주로 산화물 반도체용 타겟이나 LED 칩을 만드는 중요한 소재로 사용하고 있는데 아직까지 폐기물로부터 재자원화에 의한 순환량이 매우 낮다. 이로 인해 갈륨을 함유하고 있는 대부분의 폐자원은 해외로 유출되고 원재료는 수입에 의존하고 있다. 따라서 희유금속인 갈륨을 함유하고 있는 저품위 갈륨으로부터 갈륨을 회수하여 고순도화하는 방법을 연구 하였다. 전처리 과정으로 스크랩을 미분쇄하여 산으로 침출하였다. 침출액내 인듐은 치환으로 석출시켜 분리한 후 알칼리를 사용하여 갈륨과 아연을 수산화물로 침전시켜 여과 분리하였다. 갈륨과 아연수산화물을 알칼리용액으로 침출시켜 전해액을 제조하였고 전해채취로 갈륨과 아연메탈을 회수하였다. 갈륨과 아연은 진공정제를 통하여 아연을 제거하고 고순도의 갈륨을 회수하였다.

Mn4+ 이온 활성 K2TiF6 불화물 적색형광체의 합성과 발광특성 (Synthesis of K2TiF6:Mn4+ Red Phosphors by a Simple Method and Their Photoluminescence Properties)

  • 김연;우미혜;최성호;심광보;정하균
    • 한국재료학회지
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    • 제26권9호
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    • pp.504-511
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    • 2016
  • To prepare $Mn^{4+}$-activated $K_2TiF_6$ phosphor, a precipitation method without using hydrofluoric acid (HF) was designed. In the synthetic reaction, to prevent the decomposition of $K_2MnF_6$, which is used as a source of $Mn^{4+}$ activator, $NH_5F_2$ solution was adopted in place of the HF solution. Single phase $K_2TiF_6$:$Mn^{4+}$ phosphors were successfully synthesized through the designed reaction at room temperature. To acquire high luminance of the phosphor, the reaction conditions such as the type and concentration of the reactants were optimized. Also, the optimum content of $Mn^{4+}$ activator was evaluator based on the emission intensity. Photoluminescence properties such as excitation and emission spectrum, decay curve, and temperature dependence of PL intensity were investigated. In order to examine the applicability of this material to a white LED, the electroluminescence property of a pc-WLED fabricated by combining the $K_2TiF_6$:$Mn^{4+}$ phosphor with a 450 nm blue-LED chip was measured.