• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.573-577
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• 2004

We have synthesized a Eu$^{2＋}$-activated Sr$_3$MgSi$_2$ $O_{8}$ blue phosphor and investigated an attempt to develop blue LEDs by combining it with a InGaN blue LED chip (Len=405 nm). The InGaN-based Sr$_3$MgSi$_2$ $O_{8}$：Eu LED Lamp shows two bands at 405 nm and 460 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the Sr$_3$MgSi$_2$ $O_{8}$：Eu phosphor. The 460 m emission band is ascribed to a radiative recombination of Eu$^{2＋}$ impurity ions in the Sr$_3$MgSi$_2$ $O_{8}$ host matrix. As a consequence of a preparation of W blue LED Lamp using the Sr$_3$MgSi$_2$ $O_{8}$：Eu blue phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/blue phosphor(1/0,202). At this time, the CIE chromaticity was x=0.1417 and y=0.0683.