• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.439-439
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• 2012

ZnO 나노로드는 큰 밴드갭 에너지(~3.37 eV)와 60 meV의 높은 엑시톤 결합 에너지(exciton binding energy)를 갖고 있으며, 우수한 전기적, 광학적 특성을 지닌 1차원 나노구조의 금속산화물로서 태양전지 및 광전소자 널리 응용되고 있다. 이러한 ZnO 나노로드를 성장하는 방법 중에 전기화학증착법(electrochemical deposition method)은 전도성 물질위에 증착된 시드층(seed layer)을 성장용액에 담그어 전압을 인가하여 만들기 때문에 기존의 수열합성법(hydrothermal method), 졸-겔 법(sol-gel method)보다 비교적 간단한 공정과정으로 저온에서 빠르게 물질을 성장시킬 수 있는 장점이 있다. 한편, 디스플레이 산업에서 ITO (indium tin oxide)는 투명 전도성 산화물(transparent conductive oxide)로써 가시광 파장영역에서 높은 투과율과 전도성을 가지며, 액정디스플레이, LED (Light emitting diode), 태양전지 등의 다양한 소자에 투명전극 재료로 쓰이고 있다. 또한 최근 ITO를 유연한 PET (polyethylene terephthalate) 기판 위에 증착은 얇고, 가볍고, 휘어지기 쉬워 휴대하기 편하기 때문에 차세대 광전자소자 응용에 가능성이 크다. 본 연구에서는 ZnO 나노로드를 ITO/PET 기판위에 전기화학증착법으로 성장하여, 구조적 및 광학적 특성을 분석하였다. 시드층을 형성하기 위해 RF 마그네트론 스퍼터를 이용하여 ~20 nm 두께의 ZnO 박막을 증착시킨 후, zinc nitrate와 hexamethylenetetramine이 포함된 수용액에 시료를 담그어 전압을 인가하였다. 용액의 농도와 인가전압을 조절하여 여러 가지 성장조건에 대한 ZnO 나노로드의 구조적, 광학적 특성을 비교하였다. 성장된 시료의 형태와 결정성을 조사하기 위해, field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD)을 사용하였으며, UV-vis-NIS spectrophotometer, photoluminescence (PL) 측정장비를 사용하여 광학적 특성을 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• 한국분말재료학회지
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• 제21권3호
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• pp.215-221
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• 2014

Translucent alumina is a potential candidate for high temperature application as a replacement of the glass or polymer. Recently, due to the increasing demand of high power light emitting diode (LED), there is a growing interest in the translucent alumina. Since the translucent property is very sensitive to the internal defect, such as voids inside or abnormal grain growth of sintered alumina, it is important to fabricate the defect-free product through the fabrication process. Powder injection molding (PIM) has been commonly applied for the fabrication of complex shaped products. Among the many parameters of PIM, the flowability of powder/binder mixture becomes more significant especially for the shape of the cavity with thin thickness. Two different positions of the gate were applied during PIM using the disc type of die. The binder was removed by solvent extraction method and the brown compact was sintered at $1750^{\circ}C$ for 3 hours in a vacuum. The flowability was also simulated using moldflow (MPI 6.0) with two different types of gate. The effect of the flowability of powder/binder mixture on the microstructure of the sintered specimen was studied with the analysis of the simulation result.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.144-144
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• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• 한방안이비인후피부과학회지
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• 제30권4호
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• pp.62-74
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• 2017

Objectives : The purpose of this study is to investigate the effect of laser therapy for diabetic ulcer by using methods of systematic review. Methods : In this review, PubMed, Cochrane library, Web of Science, CNKI, CiNii, J-STAGE, NDSL and OASIS were used as the search engines. The search period is from the start date of the search engine to October 3, 2016. Randomized controlled trials(RCTs) using laser therapy for diabetic ulcer were searched and extracted by two independent researchers. Risk of bias(RoB) of Cochrane was used to assess methodological quality of studies. Results : Finally, five RCTs were selected. The follow-up period ranged from 15 days to 20 weeks. InGaAlP laser, GaAlAs laser and light emitting diode(LED) were used to treat diabetic ulcer. The clinical trials used sham laser irradiation or standard treatment as control in comparison to laser therapy. The endpoints included ulcer size, rate of healing and time to healing with follow-up period. The RCTs demonstrated therapeutic outcomes with no adverse effect. Most items of RoB were unclear and methodological quality was low. Conclusions : Our analysis suggests that laser therapy has therapeutic effects for diabetic ulcer. However, more systematic and stringent clinical trials will be required.

• 디지털융복합연구
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• 제19권11호
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• pp.341-349
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• 2021

최근 조명 산업이 중요한 분야로 인식되면서 PQR (Photonic Quantum Ring) 소자는 LED(Light Emitting Diode)를 대체할 수 있는 차세대 광원이 될 전망이다. 본 연구에서는 기존 연구와 유사한 결과를 검증하고, 소자의 광특성을 분석하기 위해 광섬유가 연결된 스테이지에 x, y, z 좌표를 입력하면 자동으로 이동하며, 또한, 소자에 광섬유를 근접시키는 NSOM (Near field scanning optical microscopy) 장치를 추가한 측정 시스템을 이용하여 소자의 광특성 실험과 공진 및 어레이 소자의 광특성 시뮬레이션을 통해 조명용 소자로 가능성을 검증하고자 하였다. 이를 위해 메사와 홀 형태가 동시에 존재하는 메사 직경 40㎛, 홀 직경 3㎛의 소자를 제작하여 소자의 근접장으로 PQR 소자는 ㎂에서 동작하며, 메사와 홀 소자는 서로 독립적으로 구동됨을 관찰하였다. 위치에 따른 소자의 광파장 스펙트럼을 측정하여 메사와 홀 소자에 의한 커플링 현상을 처음으로 확인하였다.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.112-117
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• 2024

The Internet of Things (IoT) device is a key component for Industry 4.0, which is the network in homes, factories, buildings, and infrastructures to monitor and control the systems. To demonstrate the IoT network, batteries are widely utilized as power sources, and the batteries inevitably require repeated replacement due to their limited capacity. Magneto-mechano-electric (MME) generators are one of the candidate to develop self-powered IoT systems since MME generators can harvest electricity from stray alternating current (AC) magnetic fields arising from electric power cables. Herein, we report a magneto-mechano-triboelectric generator enabled by a ferromagnetic-ferroelectric composite. In the triboelectric nylon matrix, a ferromagnetic carbonyl iron powder (CIP) was introduced to induce magnetic force near the AC magnetic field for MME harvesting. Additionally, a ferroelectric ceramic powder was also added to the MME composite material to enhance the charge-trapping capability during triboelectric harvesting. The final ferromagnetic-ferroelectric composite-based MME triboelectric harvester can generate an open-circuit voltage and a short-circuit current of 110 V and 8 μA, respectively, which were enough to turn on a light emitting diode (LED) and charge a capacitor. These results verify the feasibility of the MME triboelectric generator for not only harvesting electricity from an AC magnetic field but also for various self-powered IoT applications.

• 디지털융복합연구
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• 제12권6호
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• pp.407-414
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• 2014

이 연구의 목적은 광감작제인 라다클로린과 포토프린을 발광다이오드에 접목하여 포도알균의 광역학치료 효과를 평가하고자 하였다. 실험방법은 황색포도알균이나 표피포도알균의 $1{\times}10^5CFU/ml$이 되게 균주부유액을 준비하였고, 광감작제(포토프린 또는 라다클로린)를 1.25, 2.5, 5, $10{\mu}g/ml$가 되도록 희석하였다. 균주희석액은 에너지밀도 각각 $14.4J/cm^2$와 $19.8J/cm^2$로 630 또는 670 파장 발광다이오드 빛을 조사하였다. 황색포도알균과 표피포도알균의 집락형성수는 포토프린 $5{\mu}g/ml$ 농도에서 33, 50개의 집락이 각각 형성되었고, 두 세균 모두 라다클로린 $5{\mu}g/ml$ 농도에서는 완전한 살균을 나타냈다. 유세포분석에 의한 형광강도는 정상세포보다 죽은세포에서 증가를 보였다. 투과전자현미경의 사진에서는 세포막의 손상과 부분적으로 세포형태의 파괴가 관찰되었다. 이 결과로 포토프린과 라다클로린을 이용한 광역학치료는 항균치료의 새로운 방법이 될 수 있음을 제의한다.

• Korean Chemical Engineering Research
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• 제51권2호
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• pp.214-220
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• 2013

본 연구에서는 실리케이트계 황색 형광체($Sr_2SiO_4:Eu^{2+}$)의 신뢰성 향상을 위하여 대기압 유전체장벽방전 플라즈마를 이용하여 hexamethyldisiloxane (HMDSO, $C_6H_{18}OSi_2$)을 형광체 분말에 코팅하였다. 플라즈마 코팅 후의 형광체 분말특성은 주사전자현미경(scanning electron microscope), 투과전자현미경(transmission electron microscope), 형광분광광도계(fluorescence spectrophotometer) 및 접촉각측정기(contact angle analyzer)를 이용하여 조사되었다. 형광체 분말의 플라즈마 코팅 후 접촉각이 $133.0^{\circ}$(물)와 $140.5^{\circ}$(글리세롤)로 증가하여 표면이 소수성으로 변화되었음을 확인하였으며, 광발광(photoluminescence)은 최대 7.8%의 향상을 나타냄을 알 수 있었다. 플라즈마 코팅 후 형광체 표면의 주사전자현미경 및 투과전자현미경 사진을 통해 낟알형상의 표면조직이 박막 코팅 층으로 덮여 있고, 코팅 층은 31~46 nm 가량의 두께로 형성되어 있음을 확인하였다. 발광다이오드(3528 1 칩 LED)에 형광체를 실장한 후 $85^{\circ}C$와 85% 상대습도에서 1,000시간 동안 신뢰성 테스트(85-85 Test)를 수행한 결과 코팅이 되지 않은 경우와 비교하여 코팅후의 형광체가 광도 저하율에서도 개선 효과를 보이는 것으로 나타났다. 본 연구의 유전체장벽방전 플라즈마 코팅 방법은 불규칙한 입자 형태의 형광체 분말 표면을 입체적으로 코팅하여 제품의 신뢰성을 향상시킬 수 있는 방법으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.