• 전자공학회논문지D
• /
• 제35D권1호
• /
• pp.49-58
• /
• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• 한국광학회지
• /
• 제32권5호
• /
• pp.230-234
• /
• 2021

열응력 완화 기술은 고출력 레이저 다이오드의 빔의 품질과 안정성을 향상시키기 위한 주요 요소기술로 큰 주목을 받고 있다. 본 연구에서는 레이저 다이오드 바(LD-bar) chip-on-submount (CoS)에 발생하는 열응력 분포 양상을 SolidWorks 소프트웨어를 사용하여 해석하고, 마이크로-홈 구조 도입에 따라 열응력 완화에 미치는 영향을 체계적으로 분석한다. 마이크로-홈 구조는 누적응력을 차단하는 효과가 있는 반면, 열흐름을 방해하는 역기능도 있으므로, 시스템 구조와 방열금속판 두께에 따라 홈 깊이를 최적화할 필요가 있다. 간단히 도입된 예시구조에 대하여, LD-bar CoS의 칩 홀더 금속판에 도입하는 마이크로-홈 구조 최적화를 통해 칩 전면부 표면 응력을 마이크로-홈 구조가 없는 경우의 약 1/5 정도로 낮추었다. 향후 초고출력 시스템에서 방열을 위한 열저항과 광출력 빔크기를 최소한으로 유지하면서, 열응력을 효과적으로 완화시키는 구조로 활용이 기대된다.

• 대한전자공학회논문지
• /
• 제17권6호
• /
• pp.72-77
• /
• 1980

본 논문에서는 optical feedback prebias control 회로상의 몇가지 일반적인 문제점들을 분석하고 이에 수반되는 회로 조정의 문제를 해결하기 위하여 LD simulation 회로를 제시하였다. 온도 시험에서 LD의 총 light power를 feedback loop에 사용하였을 때 0℃부터 36℃까지의 사이에서 1.5%의 light power 감소를 보였고 star coupler를 beam splitter로 1%정도를 분지, feedback loop에 사용한 결과 transmitter로서 좋은 전송 특성을 가짐을 관찰하였다.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 추계학술대회 논문집
• /
• pp.926-929
• /
• 2005

Recently, laser interferometer is widely used as a measuring system in many fields because of its high resolution and its ability to measure a board area in real-time ail at once. In conventional laser interferometer, for examples Out of plane ESPI, In plane ESPI, Shearography and Holography, it uses PZT or other components as a phase shift instrumentation to extract 3-D deformation data, vibration mode and others. However, in most cases PZT has some disadvantages, which include noli-linear errors and limited time of use. In present study, a new type of laser interferometer using a laser diode(LD) is proposed. Using Laser Diode Sinusoidal Phase Modulating(LD-SPM) interferometer, the phase modulation can be directly modulated by controlling the LD injection current thereby eliminating the need for PZT components.

• 한국전기전자재료학회논문지
• /
• 제22권3호
• /
• pp.248-251
• /
• 2009

We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{\circ}(Horizontal){\times}24.4^{\circ}$ (Vertical), 1313.8 nm, respectively.

• Current Optics and Photonics
• /
• 제4권3호
• /
• pp.238-246
• /
• 2020

The heat distribution in crystals in a 2-㎛ acousto-optic Q-switched Tm:LuAG laser pumped by pulsed-laser-diode (pulsed-LD) intermittent-pumping technology was analyzed using COMSOL software. The thermal lensing effect of the Tm:LuAG crystal can be mitigated by pulsed-LD intermittent-pumping techniques. An experimental setup using this kind of approach achieved maximum output energy of 8.31 mJ, minimum pulse width of 101.9 ns, and highest peak power of 81.55 kW, reached at a Q-switched repetition rate of 200 Hz. It offers significant improvement of performance of the output laser beam, compared to pulsed-LD double-ended pumping technology at the same repetition rate.

• Current Optics and Photonics
• /
• 제4권6호
• /
• pp.461-465
• /
• 2020

A dual-mode laser terahertz source consisting of two in-line distributed Bragg reflector (DBR) laser diodes (LD) is proposed. It is less susceptible to residual reflections from facets than an in-line dual-mode distributed feedback (DFB) LD. The characteristics of the proposed terahertz source are theoretically investigated using a split-step time-domain simulation. It is shown that terahertz waves of frequencies from 385 GHz to 1725 GHz can be generated by appropriate thermal tuning of two DBR LDs. The dual-mode DBR LD terahertz source exhibits good spectral quality for residual facet reflectivity below 0.02, but facet reflectivity of the in-line dual-mode DFB LD terahertz source should be below 0.002 to provide similar spectral quality.

• 한국레이저가공학회지
• /
• 제9권3호
• /
• pp.7-13
• /
• 2006

Auto focusing system to find optimized focal position of laser beam used for material process has been investigated by using fiber confocal method. Wavelength of laser diode (LD) and diameter of single-mode fiber are 780nm and $5.3{\mu}m$, respectively. Intensity distributions of beam reflected from the surface of mirror and silicon bare wafer have been observed in a gaussian form. Experimental results show that focal position obtained by LD is shifted from one observed from surface scribed by laser about $80{\mu}m$. It is due to the difference of wavelength and each divergence of between LD and laser used for material process. It is confirmed that auto focusing control system through position calibration has operated steadily.

• 한국진공학회지
• /
• 제16권5호
• /
• pp.371-376
• /
• 2007

분자선 에피택시(molecular beam epitaxy, MBE)로 성장된 InGaAs 양자점 레이저 다이오드(quantum dot laser diode, QD-LD)와 InGaAs 양자우물 레이저 다이오드(quantum well laser diode, QW-LD)의 특성을 비교하였다. 펄스 입력전류 하에서 문턱전류밀도(threshold current density, $J_{th}$), 특성온도(characteristic temperature, $T_0$), 온도에 따른 발진파장의 변화도($d{\lambda}/dT$)를 측정한 결과, 양자우물 레이저 다이오드는 $J_{th}\;=\;322\;A/cm^2,\;T_0\;=\;55.2\;K,\;d{\lambda}/dT\;=\;0.41\;nm/^{\circ}C$로 측정되었으며, 양자점 레이저 다이오드는 $J_{th}\;=\;116\;A/cm^2,\;T_0\;=\;81.8\;K,\;d{\lambda}/dT\;=\;0.33\;nm/^{\circ}C$로 측정되었다. 양자점 레이저 다이오드는 양자우물 레이저 다이오드와 비교하였을 때, 문턱전류밀도 및 발진 광 파워가 상대적으로 우수한 결과를 보여주었다.

• Journal of the Optical Society of Korea
• /
• 제15권3호
• /
• pp.227-231
• /
• 2011

An external optical modulation using absorption s in a Fabry-Perot laser diode (FP-LD), has been proposed and experimentally demonstrated for multicasting in a WDM-PON. The center wavelengths of absorption s in an FP-LD move to short-wavelength rapidly by only a small current (~1 mA) injection. If the current injection is stopped, the s move back to the original position. Such a movement of the s can make the FP-LD act as an external optical modulator, which is found to modulate at a maximum modulation speed of 800 Mbps or more. For a multicasting transmitter in a WDM-PON, the proposed modulator can be cost-effectively applied to a multi-wavelength laser source with the same periodicity of the longitudinal mode. Instead of the multi-wavelength laser source, tunable-LDs are used for experiments. The 32 channel multicasting system with the proposed modulator has been demonstrated, showing power penalties of 1.53~4.15 dB at a bit error rate of $10^{-9}$ with extinction ratios better than 14.5 dB at 622 Mbps.