• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.379-384
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• 1999

Langmuir-Blodgett(LB) films which have high ordered orientation and ordering structure are fabricated by LB method which deposit the ultra-thin films of organic materials at a molecular level. The electrical characteristics of stearic acid LB ultra-thin films for the horizontal direction were investigated to develop the gas sensor using LB ultra-thin films. The optimal deposition condition to deposit the LB ultra-thin films was obtained from $\pi-A$ isotherms and the deposition status of stearic acid LB ultra-thin films was verified by the measurement of deposition ratio, UV-absorbance, and electrical properties for LB ultra-thin films. The conductivity of stearic acid LB ultra-thin films for horizontal direction was about $10_{-8}[S/cm]$. The activation energy for LB ultra-thin films with respect to variation of temperature was about 1.0[eV], which was correspond to semiconductor material. The response characteristics for organic gas were confirmed by measuring the response time, recovery time, and reproducibility of the LB ultra-thin to each organic gas. Also, the penetration and adsorption behavior of gas molecule were confirmed through the organic gas response characteristics of LB ultra-thin films with respect to temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.442-450
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• 1999

In this paper, we have fabricated Langmuir-Blodgett(LB) films by LB technique and evaluated the deposited status of LB films by UV-vis absorbance. It was found thatthe thickness of LB films per a layer are $27~30[{\AA}]$ by ellipsometry. The responeses between LB films and organic gases were investigated using by I-V characteristics of LB films and F-R diagram of quartz crystal. The response orders between LB films and organic gases observed by I-V characteristics were as following ; chloroform, methanol, acetone and ethanol in the order of their short chain length. The response mechanism between LB films and organic gases observed by F-R diagram of quartz crystal could be modeled on adsorption at surface, penetration, desorption at surface and inside.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.353-356
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• 1999

The electrical characteristics of fatty acid LB films were investigated to develop the gas sensor using Langmuir-Blodgett(LB) films which have high ordered orientation and ordering structure. The deposition status of fatty acid LB films were verified by the measurements of UV absorbance. The conductivity of fatty acid LB films for horizontal direction at room temperature was about $10^8[S/cm]$,/TEX>, which was correspond to semiconductor material. The activation energy for fatty acid LB films with respect to variation of temperature was about l.O[eV]. The response characteristics for organic gas were confirmed by measuring the response time, recovery time, and reproducibility of the fatty acid LB films to each organic gas. Also, the penetration and adsorption behavior of gas molecule were confirmed through the organic gas response characteristics of fatty acid LB films with respect to temperature.

• Polymer(Korea)
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• v.24 no.4
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• pp.453-458
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• 2000

The permeability of oxygen and nitrogen was investigated from the polymeric LB films containing imidazole-metal ion complexes and compared with its corresponding cast films on porous membrane filters. The amphiphilic polymer, poly(N- (2-(4-imidazolyl)ethyl)-maleimide-alt-1-octadecene) (IM-O), was synthesized by reaction of poly(maleic anhydride-alt-1-octadecene) with histamine. The IM-O nonolayer showed high stability on Fe (III) ion-containing subphase. The molecular structure in the LB films was investigated by means of FT-IR spectroscopy. The metal ion concentration incorporated into the LB films was determined by means of XPS measurements. The mechanical stability and uniformity of the LB films on porous substrates were indirectly evidenced by SEM observation. The LB and cast films showed more or less higher selectivity toward nitrogen, and high permeability was found to both the oxygen and nitrogen.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.10
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.13-18
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• 2000

We have fabricated LB ultra-thin films of maleate system by LB technique and evaluated the deposited status of LB ultra-thin films by I-V characteristics such as capacitance. It was found that the thickness of LB ultra-thin per layer is $27~30[{\AA}]$ by XRD. And, we have known that the conductivity along the horizontal direction of LB ultra-thin films was about $10^{-8}[S/cm]$, it corresponds to the semiconducting materials. Also, the I-V characteristics along the vertical direction of LB ultra-thin films was dominated by Schottky type current, the activation energy obtained by current-temperature characteristics was about 0.84[eV] and the conductivity was about $10^{-14}[S/cm]$, it corresponds to the insulator. And, the anisotropic conduction mechanism of the LB ultra-thin films in vertical direction and horizontal direction is determined by the hydrophilic group and the hydrophobic group in LB ultra-thin films. The above results are applicable to the semiconductor devices such as switching device, which function at the molecular level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.493-496
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• 1997

We have made disperse diazo black D(DB-D) ultrathin films using Langmur-Blodgett(LB) and vacuum-evaporation technique. Physical and electrical properties of the films were investigated. Solution was made with a concentration of 10$^{-3}$ mol/$\ell$ using chloroform. Moving wall apparatus (NL-LB140 S-MWC) was employed to make the LB films. X,Y and Z-type LB films were manufactured and studied by UV/visible absorbance spectra and morphology of surface using atomic force microscopy. Vacuum-evaporated DB-D think films were made at a pressure of 10$^{-5}$ torrr. The absorption peaks appear at 200 and 40nm in the LB films and vacuum-deposited films. And we have studied photoluminescence spectrum of the DB-D films. Also TGA and DSC properties of the DB-D have been observed and current -voltage characteristics of the DB-D LB films have been measured along the perpendicular direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.347-349
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• 1999

We have fabricated insulating thin films using p-hexadecoxyphenol(p-Hp) that was formed phenol-formaldehyde resin of crosslinked structure from reaction with formaldehyde by LB technique. For fabricated MIM device, the possibility for insulating layers of electronic were investigated by electrical properties of their LB films according to crosslinking of LB films current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. We have provided evidence for the high insulating performance of phenol-formaldehyde thin films by the LB method. Conductivity of their LB films was as follows: pure water > 1 % aq. Formaldehyde > heat treatment, in the current-voltage (I-V) characteristics. It is demonstrated that insulation properties of crosslinked p-HP LB films were improved. In capacitance-frequency properties, the heat-treated p-HP LB films for crosslinking showed a low relative dielectric constant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.820-825
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• 1998

We deposited stearic acid LB films by using Langmuir-Blodgett (LB)method and investigated anisotropy electrical conduction characteristics by I-V measurement for horizontal direction and vertical direction. Also, we measured gad response between deposited LB films and organic gas for various temperature(0~8$0^{\circ}C$) by 9MHz At-cut quartz crystal microbalance. The LB films have electrical conduction characteristics such as semiconducting and insulating properties. The is, the conductivity of LB films for the horizontal and vertical direction is about 10\ulcornerS/cm and 10\ulcorners/cm, respectively. the frequency shift of stearic acid LB films for the organic gases depended on the mass change by the surface adsorption and the inner penetration to the sensing films. The resonant frequency shift of the quartz crystal microbalance for temperature properties of LB films is thought to the effect of the rearrangement or the damage pf LB films above the melting point and the mobility increasement of the organic gas by the temperature rising.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.74-77
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• 1990

In this paper, we study the electrical conduction mechanism in Langmuir-Boldgett(LB) ultra thin films. The LB device has a metal/Lb films/metal sandwich structure, where metal is electrode. In our experiments, the temperature does not depend on the current at below 0$^{\circ}C$. This phenomena show that the electrical conduction current is a tunnel current inherent to LB ultra thin films.