• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.64-71
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• 2023

If an impedance mismatch occurs between the source and load in a Radio Frequency transmission system, reflected power is generated. This results in incomplete power transmission and the generation of Reflected Power, which returns to the Radio Frequency generator. To minimize this Reflected Power, Impedance matching is performed. Fast and efficient Impedance matching, along with converging reflected power towards zero, is advantageous for achieving desired plasma characteristics in semiconductor processes. This paper explores Impedance matching by adjusting the Vacuum Variable Capacitor of an L-type Matching Module based on the trends observed in the voltage of the Phase Sensor and Electromotive Force voltage. After assessing the impedance matching characteristics, the findings are described.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.1
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• pp.114-121
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• 2003

In this paper, low voltage and two stage CMOS Class E RF power amplifier for ISM(Industrial/Scientific/Medical) Open Band is presented. The power amplifier operates at 2.4GHz frequency, and is designed and simulated with a 0.35um CMOS technology and HSPICE simulator. The power amplifier is simple structure of two stage Class E power amplifier. The design procedure determing matching network was presented. The power amplifier is composed of input stage matching network, preamplifier, interstage matching network, power amplifier, and output stage matching network. The matching networks of input stage and interstage were constituted by pi($\pi$) type and L type respectively. At 2.4GHz operating frequency, and with a 2.5V supply voltage, the power amplifier delivers 23dBm output power to a 50${\Omega}$ load with 39% power added efficiency(PAE).

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1933-1935
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• 2004

본 연구에서는 변압기형 플라즈마 전류 모델을 기초로 한 평판형 유도 결합 플라즈마 장치에 대한 회로를 분석하여 임피던스 매칭 특성을 조사하였다. 장치 임피던스는 collisional surface impedance를 기반으로 계산된 플라즈마 임피던스와 안테나 임피던스로 결정된다. 매칭 network에 사용된 회로는 Altcmatc-typc의 회로이고, 매칭 소자인 $C_T$와 $C_L$은 임피던스 매칭 조건을 이용하여 계산하였다. 완전 매칭의 경우에는 $C_T$와 $C_L$을 플라즈마 변수들의 함수로 표현하여 의존성을 분석하고, 불완전 매칭의 경우에는 반사파에 대한 반사계수, 반사율을 계산하였다.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.149-152
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• 2002

In this paper, We have designed an internal chip type-ceramic antenna and diplexer for dual-band handset applications. for increasing bandwidth, antennas used a meander line structure with L, C matching network. The designed diplexer is based on the multi-layered structure for the purpose of the LTCC applications. We have given a notch using resonator for elevated attenuation characteristics.