• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.423-427
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• 2003

In this paper, we have investigated the output characteristics of the Stokes Raman laser in hydrogen, deuterium, and their mixed gases as a function of the incident pump energy and gas pressure using KrF excimer laser as pumping source for generating the differential absorption lidar (DIAL) wavelengths suitable in measuring the ozone concentration of the troposphere. The optimization results of compact excimer-Raman laser transmitter in DIAL system for the tropospheric ozone sounding at the 292 nm/319 m and 292 nm/313 nm wavelength pairs are presented. for the ozone sounding in the 4-12 km range, it has been demonstrated that the design of transmitter for DIAL lidar may be significantly simplified by the use of 292 nm/319 nm wavelength pair. The investigations of Raman scattering in the mixture of hydrogen and deuterium gases have shown that such mixture may be efficiently used for developing the multi- wavelength light sources for DIAL systems.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.66-66
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• 2001

• Transactions of Materials Processing
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• v.11 no.7
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• pp.601-607
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• 2002

Optically transparent materials such as fused silica, quartz and crystal have become important in the filed of optics and optoelectronics. Laser ablation continues to grow as an important technique for micromachining and surface modification of various materials, because many problems caused by direct contact between tools and workpiece can be avoided. Especially, laser ablation with excimer lasers enables fine micromachining of transparent materials such as fused silica, quartz and crystal, etc. In this study, laser-induced wet etching of fused silica in organic solution was conducted. KrF excimer laser was used as a light source and acetone solution of pyrene was used as etchant. Changing the number of laser pulses, micro holes of various depths are fabricated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1058-1062
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• 1997

Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.459-461
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• 1990

Me performed an experiment about preionization electron number density of charge transfer type KrF excimer laser. At the total pressure of 1.8 and 2.2 atm with helium (He) buffer gas, the experimental range of the electron number density is 8-9 ${\times}$ 10 cm The distance between electrode and preionization pin is 15 mJ at charging voltage of 27kV,gas pressure of 2.2 atm,gas mixture of F /Kr/He = 0.3/396.7(%).

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.20-24
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• 2000

This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.33-39
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• 1990

By developing a computer simulation code for discharge excited KrF excimer laser, we analyzed mainly the effects of buffer gas for the $KrF^*$ formation. the $KrF^*$ relaxation. and the absorption of the laser radiation. The $KrF^*$ formation efficiency were found to be 7.5%, 19% and the $KrF^*$ relaxation kinetic reactions were found to be 45%, 30% at the charging voltage of 30 KV and He. Ne buffer gas. respectively. But the absorption of the 248 nm laser radiation were less than 10% by the buffer gas.er gas.

• 한국연소학회:학술대회논문집
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• 1997.06a
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• pp.13-21
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• 1997

Excitations of eight pumping transitions for nitric oxide fluorescence imaging are analyzed under equivalent experimental conditions to determine the detection. Frequency mixed dye laser pumping, 1st anti-Stokes $H_2$ Raman of KrF excimer laser pumping and ArF excimer laser pumping show good sensitivities.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.743-746
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• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.