• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.781-785
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• 2000

Chalcogenide glasses are suggested as a candidate for optical recording. In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ thin films. We have used a He-Ne laser light(633nm) to probe and record of the grating. Also the polarization state of object beam was modulated with a λ/4 wave plate. The polarization state of the +1st order diffracted beam was generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The result is shown that the diffraction efficiency of circularly polarized recording represents higher than other polarization state.ate.e.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.6
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• pp.133-140
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• 1999

In this study, a monitoring method to detect chip disposal state in drilling system based on neural network was proposed and its performance was evaluated. If chip flow is bad during drilling, not only the static component but also the fluctuation of dynamic component of drilling. Drilling torque is indirectly measured by sensing spindle motor power through a AC spindle motor drive system. Spindle motor power being measured drilling, four quantities such as variance/mean, mean absolute deviation, gradient, event count were calculated as feature vectors and then presented to the neural network to make a decision on chip disposal state. The selected features are sensitive to the change of chip disposal state but comparatively insensitive to the change of drilling condition. The 3 layerd neural network with error back propagation algorithm has been used. Experimental results show that the proposed monitoring system can successfully recognize the chip disposal state over a wide range of drilling condition even though it is trained under a certain drilling condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3301-3303
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• 2010

Two new diterpenoid alkaloids, N(19)-en-denudatine (1) and N(4)-butanone-flavaconitine (2), were isolated from Aconitum brachypodum Diels.. Their structures were elucidated by comprehensive spectroscopic analyses including UV, IR, MS, 1D- and 2D-NMR.

• Bulletin of the Korean Chemical Society
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• v.25 no.8
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• pp.1241-1243
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• 2004

• The Bulletin of The Korean Astronomical Society
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• v.41 no.1
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• pp.44.2-44.2
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• 2016

The solar wind electrons are made of three or four distinct components, which are core Maxwellian background, isotropic halo, and super-halo (and sometimes, highly field-aligned strahl component which can be considered as a fourth element). We put forth a steady-state model for the solar wind electrons by considering both the steady-state particle and wave kinetic equations. Since the steady-state solar wind electron VDFs and the steady-state wave fluctuation spectrum are related to each other, we also investigate the complete fluctuation spectra in the whistler and Langmuir frequency ranges by considering halo- and superhalo-like model electron VDFs. It is found that the energetic electrons make important contributions to the total emission spectrum. Based on this, we complete the steady-state model by considering both the whistler and Langmuir fluctuations. In particular, the Langmuir fluctuation plays an important role in the formation and maintenance of nonthermal electrons.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1194-1198
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• 2010

A high temperature superconducting power cable (HTS power cable) was applied large current capacity by no resistance in normal state. Fault state was risen out of over-current but, it was limited to resistance. this study was modeling equivalence, and unbalanced state analyzed operating charateristics of HTS power cable. The equivalence model was composed superconductor, shield, and former part. This model simulation was appeared conductor and shield current in normal state, but fault state was appeared former current as rise current by resistance. so it need to sufficiently influenced the quench characteristic when the former design.

• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1937-1940
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• 2004

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2447-2449
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• 2012