• Korean Journal of Materials Research
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• v.20 no.11
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• pp.617-622
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• 2010

We have studied methods to save Si source during the fabrication process of crystalline Si solar cells. One way is to use a thin silicon wafer substrate. As the thickness of the wafers is reduced, mechanical fractures of the substrate increase with the mechanical handling of the thin wafers. It is expected that the mechanical fractures lead to a dropping of yield in the solar cell process. In this study, the mechanical properties of 220-micrometer-solar grade Cz p-type monocrystalline Si wafers were investigated by varying saw-damage etching conditions in order to improve the flexural strength of ultra-thin monocrystalline Si solar cells. Potassium hydroxide (KOH) solution and tetramethyl ammonium hydroxide (TMAH) solution were used as etching solutions. Etching processes were operated with a varying of the ratio of KOH and TMAH solutions in different temperature conditions. After saw-damage etching, wafers were cleaned with a modified RCA cleaning method for ten minutes. Each sample was divided into 42 pieces using an automatic dicing saw machine. The surface morphologies were investigated by scanning electron microscopy and 3D optical microscopy. The thickness distribution was measured by micrometer. The strength distribution was measured with a 4-point-bending tester. As a result, TMAH solution at $90^{\circ}C$ showed the best performance for flexural strength.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.11
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• pp.2439-2443
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• 2011

To obtain the effect of texturing process in Solar cells, the Si-wafers were textured by using the IPA+DI water mixed etching solution with KOH alkaline. All samples were analyzed by the scanning electron microscopy for the surface images, and it was researched the correlation between the efficiency of optical properties and the effect of texturing. From the results of the surface images obtained by SEM, mc-Si wafer shows a isotropic surface but sc-Si wafers displays the unisotropic surface. The reflectance was improved at the sc-Si wafer textured uniformly, and the reflectance of over etched-samples increased.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.315-321
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• 2017

Antireflective pyramid arrays can be readily obtained via anisotropic etching in alkaline solution (KOH, NaOH), which is widely used in crystalline-Si (c-Si) solar cells. The periodic inverted pyramid arrays show even lower light reflectivity because of their superior light-trapping characteristics. Since this inverted pyramidal structures are mostly achieved using very complex techniques such as photolithograpy and laser processes requiring extra costs, here, we demonstrate the Cu-nanoparticle assisted chemical etching processes to make the inverted pyramidal arrays without the need of photolithography. We have mainly controlled the concentration of $Cu(NO_3)_2$, HF, $H_2O_2$ and temperature as well as time factors that affecting the reaction. Optimal inverted pyramid structure was obtained through reaction parameters control. The reflectance of inverted pyramid arrays showed < 10% over 400 to 1100 nm wavelength range while showing 15~20% in random pyramid arrays.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.182-187
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• 2005

A large area micro mirror is an optical element that functions as changing an optical path by reflection in integrated optical system. We fabricated the large area silicon mirror by anisotropic etching using MEMS for implementation of integrated optical pickup. In this work, we report the optimum conditions to better fabricate and design, greatly improve mirror surface quality. To obtain mirror surface of $45^{\circ},\;9.74^{\circ}$ off-axis silicon wafer from (100) plane was used in etching condition of $80^{\circ}C$ with 40wt.% KOH solution. After wet etching, polishing process by MR fluid was applied to mirror surface for reduction of roughness. In the next step, after polymer coating on the polished Si wafer, the Si mirror was fabricated by UV curing using a trapezoid bar-type way structure. Finally, we obtained peak to valley roughness about 50 nm in large area of $mm^2$ and it is applicable to optical pickup using blu-ray wavelength as well as infrared wavelength.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2515-2517
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• 1998

The micro fresnel lens(MFL) was modeled and fabricated on a XY-stage electrostatically driven by comb actuator. The modeled MFL was approximated as a step shape with 4-phase and 4-zone plate. The focal length and diameter of the MFL is 20mm and 912${\mu}m$, respectively. The XY-stage suspending the MFL is designed to generate a large static displacement up to about 20${\mu}m$. On SOI substrates, we first fabricated MFL using the RIE(reactive Ion etching) technology and then patterned and etched bulk silicon to make XY-stage. After the fabrication of all structures on top side of the SOI substrates. $Si_3N_4$ was deposited for passivation of all structures using PECVD(plasma enhanced chemical vapor deposition). All the MFL systems width comb drive actuator were released by KOH etching from the bottom side of the SOI wafer using double-sided alignment technique. In fabrication of MFL, a dry etching conditions is established in order to improve surface roughness and to control the etched depth.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.844-847
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• 2001

The application of laser direct etching has been discussed, and believed that the process is a very powerful method for micro machining. This study is focused on the micro patterning technology using laser direct etching process with no chemical damage of the material surface. A new introduced concept of energy synergy effect for surface micro machining is the combination of chemically ion reaction and laser thermal process. The etchant can't etch the material in room temperature, and used Ar laser has not power enough to machine. But, the machining is occurred in local area of the material by the combined energy. Using this process, the material is especially prevented from chemical damage for electric property. We have tested this new concept, and achieved a line with $1{mu}m$ width. The Ar laser with 488nm wavelength was used. The material was Si(100) wafer, and etchant is KOH solution. The application and flexibility of this process is in great hopes for MEMS structures and fabrication of the micro electric device parts.

• Transactions of Materials Processing
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• v.13 no.4
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• pp.326-333
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• 2004

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.31-35
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• 2011

For high efficiency of Si-cells, Si wafers were textured by the KOH and NaOH etching solution to decreas the reflectance at surfaces of the cells. The textured surfaces were shown various types such as isotropic and anisotropic depending on the etching solution. The reflectance at sample of an anisotropic form with pyramid type was lower than that of isotropic form. The surface with isotropic form of general tiny circles on the surface increased the efficiency, however, the reflectance of it was increased. The efficiency was increased on surface with low roughness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.146-149
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• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.261-268
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• 1999

Laser-induced thermochemical etching has been recognized as a new powerful method for processing a variety of materials, including metals, semiconductors, ceramics, insulators and polymers. This study presents characteristics of direct etching for Si substrate using focused argon ion laser beam in aqueous KOH and $CCl_2F_2$ gas. In order to determine process conditions, we first theoretically investigated the temperature characteristics induced by a CW laser beam with a gaussian intensity distribution on a silicon surface. Major process parameters are laser beam power, beam scan speed and reaction material. We have achieved a very high etch rate up to $434.7\mum/sec$ and a high aspect ratio of about 6. Potential applications of this laser beam etching include prototyping of micro-structures of MEMS(micro electro mechanical systems), repair of devices, and isolation of opto-electric devices.