• 한국자동차공학회논문집
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• 제16권2호
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• pp.136-142
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• 2008

Thermal management of a junction box of a passenger car has recently become more challenging due to its smaller size and larger current capacity. Thus, it is essential to perform the thermal optimization of a junction box in its design on an early stage of vehicle design. In this study, 3 dimensional CFD simulation with experimental measurement has been done to study for better thermal management of the junction box. First, the study of thermal characteristics of electric relays in the junction box has revealed that each surface of the relay has very different thermal resistance. In addition, an idea to install a cooling fan on the junction box has been studied and it was found that the forced cooling method was not effective on the system to keep the thermal resistance to the reasonable level of the junction box. Finally, the effect of external flows around the junction box on the temperatures of the relays, fuses, etc. has been studied and the result shows that the installation of the junction box at the proper place in an engine room can avoid any unnecessary overdesign in thermal management.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2005년도 춘계 학술기술논문발표대회 논문집
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• pp.179-183
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• 2005

In apply roof waterproof system using of synthetic high polymer sheet for rooftop measure physical performance (tension$\cdot$tearing ability, temperature relativity, heating stretch performance, junction performance, wind resistance test) by various test environment condition waterproof test of structure and performance of construction work aspect, present suitable form of construction work under these environment. Also, wish to improve durability of concrete structure as that examine in priority about adhesion method and joint junction method with waterproof out surface, and present new direction about roof system application of waterproofing method for rooftop.

• 마이크로전자및패키징학회지
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• 제23권3호
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• pp.7-14
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• 2016

High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.495-497
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• 2014

Combining the quantum transport theory with new field of Spin Caloritronics, we investigate on the influence of thermal gradient on the magneto tunnel junction structure under various circumstances. The results indicate enhancement in performance of spintronic device is possible using thermal energy.

• Journal of Advanced Marine Engineering and Technology
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• 제36권1호
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• pp.51-56
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• 2012

본 논문은 고파워 전자소자의 폐열로부터 에너지 수확을 목적으로 하는 열전생성기의 생성효율과 열적 성능에 대하여 논한다. 열경계저항을 포함하는 열전모델이 적용되어 생성효율과 고전력 전자소자의 junction 온도를 예측하였고 그 결과는 실험치로 검증되어진다. 검증결과는 예측치와 계측치의 오차가 작음을 보인다. 검증후 열전모델은 다양한 로드저항과 열원의 열율에서 생성효율, 열전생성기 양면의 온도차, 소자의 junction 온도를 예측한다. 본 연구는 로드저항이 생성효율, 열전생성기 양면의 온도차, junction 온도에 미치는 영향에 대해서도 탐구한다.

• Current Photovoltaic Research
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• 제7권3호
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• pp.76-84
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• 2019

Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.

• Applied Microscopy
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• 제50권
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• pp.17.1-17.9
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• 2020

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

• Transactions on Electrical and Electronic Materials
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• 제17권6호
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• pp.359-362
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• 2016

In the PV (Photovoltaic) power system, a junction box collects the DC voltage generated from the PV module and transfers it to the PCS (power conditioning system). The junction box prevents damage caused by the voltage difference between the serially connected PV modules and provides convenience while repairing or inspecting the PV array. In addition, the junction box uses the diode to protect modules from the inverse current when the PV power system and electric power system are connected for use. However, by using the reverse blocking diode, heat is generated within the junction box while generating electric power, which decreases the generating efficiency, and causes short circuit and electric leakage. In this research, based on the purpose of improving the performance of the PV module by decreasing the heat generation within the junction box, a junction box with a built-in bypass circuit was designed/manufactured so that a certain capacity of current generated from the PV module does not run through the reverse blocking diode. The manufactured junction box was used to compare the electric power and heating power generated when the circuit was in the bypass/non-bypass modes. It was confirmed that the electric power loss and heat generation indicated a decrease when the circuit was in the bypass mode.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.973-977
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• 2010

The temperature of junction in LED affects the life time and performance. however, the measurement of junction temperature in module is very difficult. In this paper, to measure the junction temperature in LED module, optical and electrical properties is measured in single package in temperature from 25 [$^{\circ}C$] to 85 [$^{\circ}C$], and then junction temperature can is estimated in module with measuring the average voltage of single package. As results, the junction temperature of single package is measured the temperature of 61.2 [$^{\circ}C$] in ambient temperature, also, the junction temperature of LED module is measured the temperature of 72.5 [$^{\circ}C$] in ambient temperature.