• Genomics & Informatics
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• v.4 no.1
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• pp.33-39
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• 2006

Alternative splicing (AS) is an important mechanism of producing transcriptome diversity and microarray techniques are being used increasingly to monitor the splice variants. There exist three types of microarrays interrogating AS events-junction, exon, and tiling arrays. Junction probes have the advantage of monitoring the splice site directly. Johnson et al., performed a genome-wide survey of human alternative pre-mRNA splicing with exon junction microarrays (Science 302:2141-2144, 2003), which monitored splicing at every known exon-exon junctions for more than 10,000 multi-exon human genes in 52 tissues and cell lines. Here, we describe an algorithm to deduce the relative concentration of isoforms from the junction array data. Non-negative Matrix Factorization (NMF) is applied to obtain the transcript structure inferred from the expression data. Then we choose the transcript models consistent with the ECgene model of alternative splicing which is based on mRNA and EST alignment. The probe-transcript matrix is constructed using the NMF-consistent ECgene transcripts, and the isoform abundance is deduced from the non-negative least squares (NNLS) fitting of experimental data. Our method can be easily extended to other types of microarrays with exon or junction probes.

• Progress in Superconductivity
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• v.12 no.2
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• pp.114-117
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• 2011

We report our efforts on the development of Nb-based non-hysteretic Josephson junction fabrication process for quantu device applications. By adopting and modifying the existing Nb-aluminum oxide tunnel junction process, we develop a process for non-hysteretic Josephson junction circuits using metal-silicide as metallic barrier material. We use sputter deposition of Nb and $MoSi_2$, PECVD deposition of silicon oxide as insulator material, and ICP-RIE for metal and oxide etch. The advantage of the metal-silicide barrier in the Nb junction process is that it can be etched in $SF_6$ RIE together with Nb electrode. In order to define a junction area precisely and uniformly, end-point detection for the RIE process is critical. In this paper, we employed thin Al layer for the etch stop, and optimized the etch condition. We have successfully demonstrated that the etch stop properties of the inserted Al layer give a uniform etch profile and a precise thickness control of the base electrode in Nb trilayer junctions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.68-76
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• 1992

Concurrent Junction process (simultaneous formation of a silicide and a junction on the implanted substrate) by Rapid Thermal Annealig has been investigated. Electrical and material properties of CoSi$_2$ films were analyzed with Alpha Step, 4-point probe, X-ray diffraction(XRD) and Scanning Electron Microscope(SEM). And CoSi$_2$ junctions were examined with Spreading Resistance probe in order to see the redistribution of electrically activated dopants and determined the junction depth. Two step annealing process, which was 80$0^{\circ}C$ for 30sec and 100$0^{\circ}C$ for 30sec in NS12T ambient was employed to form CoSi$_2$ and shallow junctions. Resistivity of CoSi$_2$ was turned out to be 11-15${\mu}$cm and shallow junctions less than 0.1$\mu$m were successfully formed by the process. It was found that the dopant concentration at CoSi$_2$/Si interface increased as decreasing the thickness of Co films in case of $p^{+}/n$ and $n^{+}/p$ junctions while the junction depth decreased as increasing CoSiS12T thickness in case of $p^{+}/n$ junction.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.30.2-30.2
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• 2010

Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

• Journal of Korean Association for Spatial Structures
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• v.1 no.1 s.1
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• pp.117-124
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• 2001

In Single-layer latticed domes with rectangular network which is composed of ring of circumferential direction and rafter of longitudinal direction, that is, rib domes, if we use the cross-membered junction's method for the advantage in fabrication and construction, the eccentricity is occurred in the nodal point of crossing members. This paper is aimed at investigating the buckling characteristics for the effect of eccentricity according to rise-span ratios and distance of eccentricity. Analysis method is based on FEM dealing with the geometrically nonlinear deflection problems. The conclusion were given as follows: 1. The maximum decreasing ratio of buckling strength due to the junction's eccentricity is about 60% in models of this paper. 2. In the increasing ratio of buckling strength for rise-span ratio, that of Type 3 models is larger than that of type 2 models. On the other hand, that of Type 2 mode is larger than that of Type 3 for eccentricity-distance. 3. In the viewpoint of the value of buckling strength, that of Type 2 models is larger than that of type 3 models. The effect of the junction's rigidity on buckling strength is not great for overall models. Therefore if we use the cross-membered junction's method for the advantage in fabrication and construction, the method of Type 2 will have the great advantage of that of Type 3.

• Journal of Medicine and Life Science
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• v.19 no.3
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• pp.116-120
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• 2022

Objective: To estimate the efficacy of sequential treatment of bladder endometriosis (BE) of the vesicoureteric junction using transurethral resection (TUR) and hormonal therapy. Design: Case report. Setting: Private multispecialty hospital. Patient: A multiparous woman presented with perimenstrual lower urinary tract symptoms, cyclic chronic pelvic pain, and left loin pain. Intervention[s]: Ultrasonography revealed marked left renal dilatation. Computed tomography confirmed the presence of a bladder mass. A diagnostic cystoscopy revealed compression of the left vesicoureteral junction. Complete TUR BE with release of chocolate material during resection, followed by ureteric double J stent insertion for 3 months, was performed. Histopathology confirmed the diagnosis of BE, followed by adjuvant hormonal therapy (dienogest) for 3 months. Follow-up for about 2 years revealed complete relief of the symptoms without any recurrence. Main Outcome Measure[s]. Success and recurrence rates of sequential TUR and hormonal therapy of BE of the vesicoureteric junction. Result[s]. TUR BE followed by adjuvant hormonal therapy was very effective in eradicating BE of the vesicoureteric junction in a safe manner without recurrence on follow-up for 2 years. Conclusion[s]. BE of the vesicoureteric junction can be properly treated by sequential TUR and hormonal therapy without recurrence over a 2-year follow-up.

• Journal of information and communication convergence engineering
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• v.5 no.4
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• pp.324-327
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• 2007

In this paper, the p-n junction depth with nondestructive method by using scanning electron microscopy (SEM) is determined and conformed. By measuring the critical short circuit current on the p-n junction which induced by electron beam and calculating generation range, the diffusion depth can be obtained. It can be seen that values destructively measured by constant angle lapping and nondestructively by this study almost concur. As this result, it is purposed that diffusion depth of p-n junction can be easily measured by nondestruction. This nondestructive method can be recommended highly to the industrial analysis.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.65-67
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• 2002

An approximate, numerically-efficient solution for a microstrip T-junction is discussed. The microstrip T-junction is modeled as a rectangular waveguide with top/bottom electric walls and side magnetic walls. Comparisons of our solution with others show favorable agreements.

• The Journal of Churna Manual Medicine for Spine and Nerves
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• v.5 no.2
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• pp.113-125
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• 2010

Objectives: We have evaluated the effects of conservative treatment on one patient who was diagnosed to thoraco-lumbar junction and lumbo-sacral junction transitional zone syndrome. so, we investigate thoraco-lumbar junction and Jumbo-sacral junction tranzitional zone syndrome that was suggested by Maigne R. Methods : One patient was diagnosed as T12-L1 herinated intervetebral disc through MRI. We diagnosed the patient to transitional zone syndrome by symptoms and physical examination and used Acupuncture therapy, Cox technique to the patient. We measured Visual Analog Scale(VAS) before and after treatment. Results: After treating Acupuncture therapy, Cox technique in the case, We find out that the patient was improved. VAS score changed from 7 to 2 and physical examinations are improved. Conclusions: We improved the patient who had thoraco-lumbar junction and lumbo-sacral junction transitional zone syndrome by Cox technique and Acupuncture therapy, and we found that thoraco-lumbar junction related lumbo-sacral junction.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.