• Analytical Science and Technology
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• v.5 no.2
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• pp.169-176
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• 1992

Analytical detection limits and Relative Ion Yield (RIY) by a jet type ion source glow discharge mass spectrometer(GD/MS) have been measured. With a jet type ion source, the sample loss rate for a Cu sample is 0.23 mg/min with 0.1 L/min gas flow rate and 0.11 mg/min with no gas flow rate. However, the ion intensity of Cu does not change significantly with thee variation of the gas flow rate. The RIY values obtained from the calibration curves of the six copper based standards were between 0.57 of Fe and 3.5 of Cr. The detection limits of most elements were in the range of 0.9 and 2.0 ppm when the glow discharge was operated at 4 mA, 1000V.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.