• Title/Summary/Keyword: Ito processes

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A SHARP BOUND FOR ITO PROCESSES

  • Choi, Chang-Sun
    • Journal of the Korean Mathematical Society
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    • v.35 no.3
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    • pp.713-725
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    • 1998
  • Let X and Y be Ito processes with dX$_{s}$ = $\phi$$_{s}$dB$_{s}$$\psi$$_{s}$ds and dY$_{s}$ = (equation omitted)dB$_{s}$ + ξ$_{s}$ds. Burkholder obtained a sharp bound on the distribution of the maximal function of Y under the assumption that │Y$_{0}$$\leq$│X$_{0}$│,│ζ│$\leq$$\phi$│, │ξ│$\leq$$\psi$│ and that X is a nonnegative local submartingale. In this paper we consider a wider class of Ito processes, replace the assumption │ξ│$\leq$$\psi$│ by a more general one │ξ│$\leq$$\alpha$$\psi$│ , where a $\geq$ 0 is a constant, and get a weak-type inequality between X and the maximal function of Y. This inequality, being sharp for all a $\geq$ 0, extends the work by Burkholder.der.urkholder.der.

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Application and Processes for Sputtered ITO Films (스퍼터 ITO박막의 제조 공정 이해 및 활용)

  • Song, Pung-Keun
    • Journal of the Korean institute of surface engineering
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    • v.50 no.2
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    • pp.55-71
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    • 2017
  • Transparent Conductive Oxide (TCO), especially Indium Tin Oxide (ITO) films are almost prepared by DC magnetron sputtering because of the advantage of obtaining homogeneous large area coatings with high reproducibility. The purpose of this report is describe a detailed investigation of key factors dominating electrical and structural properties of sputtered ITO films. It was confirmed that crystallinity and electrical properties of ITO films were strongly depend on the sputtering pressure and kinetic energy of sputtered particles which are expected to have a close relation with the transport processes between target and substrate. And also, nodule formation on the ITO target was suppressed by both $CaCO_3$ addition and decreasing micro-pore in the target. On the other hand, we focused on the characteristics of amorphous TCO film to use as transparent electrode for various applications. To realize high thermoelectric performance, it was tried to control both high electrical conductivity and low thermal conductivity for the amorphous IZO:Sn films.

Trends of Recycling of Indium-Tin-Oxide (ITO) Target Materials for Transparent Conductive Electrodes (TCEs) (투명전극용 인듐 주석 산화물 타겟 소재의 재자원화 동향)

  • Hong, Sung-Jei;Lee, Jae Yong
    • Clean Technology
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    • v.21 no.4
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    • pp.209-216
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    • 2015
  • Indium-Tin-Oxide (ITO) is a material that is widely used for transparent conductive electrodes (TCEs). Indium (In), chief element of the ITO, is expected to be depleted in the near future owing to its high cost and limited reserves. To overcome the issue, ITO has to be retained by recycling redundant ITO targets after manufacturing processes. In this article, we proposed an efficient recycling way of the redundant ITO targets with investigation of the current recycling tendencies in domestic and foreign countries. As a result, it was revealed that only In is recycled from the redundant targets in domestic and Japan. As well, fabrication of TCEs is being researched with ITO nanoparticles solutions. However, since the TCEs fabricated with ITO target is superior to those with other materials, it is thought that establishment of regeneration technology of ITO itself is demanded for an efficient recycling and fabrication of ITO target.

Effects of Heat Treatment on the Properties of ITO Films Deposited with Powder Target (분말 타겟을 이용하여 증착된 ITO 박막의 열처리 특성)

  • Lee Jae-Hyeong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.109-115
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    • 2006
  • Indium tin oxide (ITO) films have been prepared by DC magnetron sputtering. In order to improve the utilization efficiency of the target and reduce the cost of the film deposition processes, the powder target was used instead of the conventional ceramic target. As-deposited films were annealed at temperatures between $200^{\circ}C$ and $500^{\circ}C$ for 30 min in air. Also, the film was annealed in various atmospheres such as air, $O_2,\;H_2,\;N_2$, and vacuum at $400^{\circ}C$C for 30 min. Effects of the heat treatment conditions on structural, electrical, and optical properties of ITO films were investigated. The annealing temperature of $400^{\circ}C$ and atmospheres of $H_2$ and $N_2$ seem to be the most suitable conditions for post processing.

Transparent Electrode Forming Technology using ESD Coating Methode (ESD 기법을 이용한 투명전도막 형성 기술)

  • Kim, Jung-Su;Kim, Dong-Soo
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.348-348
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    • 2009
  • The conductive coating method is used for various industrial fields. For example, Sputtering process is used to coat ITO layer in LCD or OLED panel manufacture process and fabricate a base layer of substrate of an electric printing device. However, conventional coating processes (beam sputtering, spin coating etc.) has a problems in the industrial manufacturing process. These processes have a very high cost and critical manufacturing environment as a vacuum process. Recently, many researchers have proposed various printing process instead of conventional coating processes. In this paper, we propose an ESD printing process in ITO coating layer and apply to fabricate a conductive coating film. Furthermore, the effect of the nozzle and also the applied voltage on different configuration of the nozzle head was also studied for better understanding of the Electro Static deposition process.

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ON THE CONTINUITY AND GAUSSIAN CHAOS OF SELF-SIMILAR PROCESSES

  • Kim, Joo-Mok
    • Journal of the Chungcheong Mathematical Society
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    • v.12 no.1
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    • pp.133-146
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    • 1999
  • Let {X(t), $t{\geq}0$} be a stochastic integral process represented by stable random measure or multiple Ito-Wiener integrals. Under some conditions, we prove the continuity and self-similarity of these stochastic integral processes. As an application, we get Gaussian chaos which has some shift continuous function.

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Implementation of Charge-Pump Active-Matrix OLED Panel with $64\;{\times}\;64$ Pixels Using $ITO/SiO_2/ITO$ Capacitors and a-Si:H Schottky Diodes

  • Na, Se-Hwan;Seo, Jong-Wook;Kwak, Mi-Young;Shim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1267-1270
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    • 2006
  • Organic light-emitting diode (OLED) display panel with $64\;{\times}\;64$ pixels utilizing the charge-pump (CP) pixel addressing method was fabricated using conventional thin-film processes. Each pixel consists of a-Si:H Schottky diode and $ITO/SiO_2/ITO$ capacitor. It is shown that CP-OLED is technically feasible for information display and a driving voltage below $4V_{pp}$ is enough for nominal operation.

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InGaAs/InP HPT's with ITO Transparent Emitter Contacts (ITO 에미터 투명전극을 갖는 InGaAs/InP HPT의 연구)

  • Han, Kyo-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.268-272
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    • 2007
  • A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.

CMP Properties of ITO Thin Film by CMP Process Parameters (공정변수 변화에 따른 ITO 박막의 연마특성)

  • Choi, Gwon-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.105-106
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    • 2005
  • As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process has been widely used in microelectronics and semiconductor processes. Indium tin oxide (ITO) thin film was polished by CMP by the change of process parameters for the improvement of CMP performance. Removal rate and planarity were improved after CMP process at the optimized process parameters compared to that before CMP process.

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Comparative Study on the Fine Structure of Small Cells in the Space of Disse of Various Animal Livers (각종 동물 간소엽내 Disse강의 소세포에 관한 미세구조적 비교 연구)

  • Hwang, Seung-Jun;Shin, Young-Chul
    • Applied Microscopy
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    • v.22 no.1
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    • pp.15-32
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    • 1992
  • This study was an attempt to investigate and compare the fine structure of small cells in the space of Disse of various animal livers. All animal livers contained small cells with or without lipid droplets and the one with lipid droplet seemed to be more developed and show an abundance of activity in function. The fine structure of the small cells observed in the nonmammals was similar to that of Ito cell in the mammal. The electron density of the small cells was similar to that of other cell types in the same animal liver. The cisternal dilation of rough endoplasmic reticulum and Golgi apparatus was more predominant in the mammalian Ito cells. In the nonmammalian, aquatic vertebrates, however, lysosomes and filaments are much more abundant in the Ito cell and its abundant cytoplasmic processes rich in filaments were usually extended between the parenchymal cells. The disparity in size of organelles and numbers of lipid droplets in the small cells showed a tendency similar to those of other cell types in the same animal. From these results, it is considered that the small cells in the space of Disse is a Ito cell and the Ito cell without lipid droplets differentiates into the one containing lipid droplets according to the characteristics of the different animals respectively, and that the Ito cells in the mammals are more active in metabolic function, while those in the nonmammalian aquatic vertebrates are abundant in support of parenchyme.

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