• 제목/요약/키워드: Irradiation Devices

검색결과 151건 처리시간 0.022초

액정 디스플레이 배향막을 위한 이온빔 표면조사에 관한 연구 (Ion beam irradiation for surface modification of alignment layers in liquid crystal displays)

  • 오병윤;김병용;이강민;김영환;한정민;이상극;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.41-41
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    • 2008
  • In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

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Experimental and model study on the mixing effect of injection method in UV/H2O2 process

  • Heekyong Oh;Pyonghwa Jang;Jinseok Hyung;Jayong Koo;SungKyu Maeng
    • Membrane and Water Treatment
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    • 제14권3호
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    • pp.129-140
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    • 2023
  • The appropriate injection of H2O2 is essential to produce hydroxyl radicals (OH·) by mixing H2O2 quickly and exposing the resulting H2O2 solution to UV irradiation. This study focused on evaluating mixing device of H2O2 as a design factor of UV/H2O2 AOP pilot plant using a surface water. The experimental investigation involved both experimental and model-based analyses to evaluate the mixing effect of different devices available for the H2O2 injection of a tubular hollow pipe, elliptical type of inline mixer, and nozzle-type injection mixer. Computational fluid dynamics analysis was employed to model and simulate the mixing devices. The results showed that the elliptical type of inline mixer showed the highest uniformity of 95%, followed by the nozzle mixer with 83%, and the hollow pipe with only 18%, after passing through each mixing device. These results indicated that the elliptical type of inline mixer was the most effective in mixing H2O2 in a bulk. Regarding the pressure drops between the inlet and outlet of pipe, the elliptical-type inline mixer exhibited the highest pressure drop of 15.8 kPa, which was unfavorable for operation. On the other hand, the nozzle mixer and hollow pipe showed similar pressure drops of 0.4 kPa and 0.3 kPa, respectively. Experimental study showed that the elliptical type of inline and nozzle-type injection mixers worked well for low concentration (less than 5mg/L) of H2O2 injection within 10% of the input value, indicating that both mixers were appropriate for required H2O2 concentration and mixing intensity of UV/ H2O2 AOP process. Additionally, the elliptical-type inline mixer proved to be more stable than the nozzle-type injection mixer when dealing with highly concentrated pollutants entering the UV/H2O2 AOP process. It is recommended to use a suitable mixing device to meet the desired range of H2O2 concentration in AOP process.

FRICTION UNITS FOR THE MOON

  • Drozdov, Yu.N.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.389-396
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    • 2002
  • In XXI century it is necessary to expect the recommencement and development of activities on mastering the Moon. In the long term it is construction of manned lunar bases with industrial, astrophysical, procuring, repair equipment and services. Interplanetary flights from the Moon demand smaller power expenditures, than from the Earth, therefore it is favourable to use its surface for the construction of space-vehicle launching sites. Flights of devices in libration points in the system 'Earth - Moon' are considered. Experience of engineering system creation for the Moon displays the great complexity in provision of serviceability and reliability of friction units. Open friction units should operate under following conditions on the Moon: pressure of environment (vacuum) $p\;>10\;^{-10}$ Pa; wide range of temperature change $+150^{\circ}C\;...170^{\circ}C$; high evaporability of lubricants; influence of temperature gradients and warping of constructions; sublimation of elements of constructional materials; irradiation of different physical nature; effect of micrometeorites; reduced gravitation; influence of abrasive particles of lunar ground; requirements on minimization of size and weight characteristics of a construction (high tension); undesirability (impossibility) of application of liquid and plastic lubricants; vibration, shock, acoustic loadings during start and landings to the Earth; difficulties in repair-regenerative operations in conditions of the Moon etc. Adhesive interaction of conjugated surfaces is the principal reason of possible failures of rubbed units on the Moon. In the research of the Moon automatic interplanetary stations of 'Luna' (USSR), 'Surveyer', 'Apollo' (USA) series were used. Stations executed functions of flying, landing, artificial satellites of the Moon, moon-rovers and manned spacecrafts such as 'Apollo'. The experimental- theoretical researches carried out in the sixtieth years on tribology for conditions of the Moon appeared to be rather useful to engineering of an outer space exploration and the decision of complex problems for the friction units operating in extreme conditions on the Earth. For the creation of highly loaded friction units for the long service life on the Moon it is required not only to use accumulated experience and designed technologies, but also to carry out wide scientific research.

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관동맥혈관 내 방사선 근접 치료 (Intracoronary Radiation Therapy)

  • 문대혁;박성욱;홍명기;오승준;범희승;이희경
    • 대한핵의학회:학술대회논문집
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    • 대한핵의학회 2001년도 제40차 춘계학술대회 및 연수교육
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    • pp.24-34
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    • 2001
  • Restenosis remains a major limitation of percutaneous coronary interventions. Numerous studios including pharmacological approaches and new devices failed to reduce the restenosis rate except coronary stenting. Since the results of $BENESTENT^{1)}\;and\;STRESS^{2)}$ studies came out, coronary stenting has been the most popular interventional strategy in the various kinds of coronary stenotic lesions, although the efficacy of stenting was shown only in the discrete lesion of the large coronary artery. The widespread use of coronary stenting has improved the early and late outcomes after coronary intervention, but it has also led to a new and serious problem, e.g., in-stent restenosis. Intravascular radiation for prevention of restenosis is a new technology in the field of percutaneous coronary intervention. Recent animal experiments and human trials have demonstrated that local irradiation, in conjunction with coronary interventions, substantially diminished the rate of restenosis. This paper reviews basic radiation biology of intracoronary radiation and its role in the inhibition of restenosis. The current status of intracoronary radiation therapy using Re-188 liquid balloon is also discussed.

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Direct Evidence for the Radioprotective Effect of Various Carbohydrates on Plasmid DNA and Escherichia coli Cells

  • Ryu, Hwa-Ja;Yi, Kyung-Eun;Kim, Do-Won;Jung, Yun-Dae;Chang, Suk-Sang;Seo, Eun-Seong;Lee, Ki-Young;Marceau-Day, M.L.;Kim, Do-Man
    • Journal of Microbiology and Biotechnology
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    • 제12권4호
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    • pp.598-602
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    • 2002
  • Damage to cells exposed to radiation is primarily attributed to direct effects on the structure of cellular DNA. Radiation-induced damage of pBluescript SK plasmid DNA and Escherichia coli $DH5\alpha$ were examined in the presence of various branched oligosaccharides, polysaccharides, and/or 8-MOP (8-methoxypsoralen). Branched oligosaccharides efficiently protected DNA and cells exposed to ultrasoft X-ray and UV irradiation. In the presence of 0.2% (w/v) branched oligosaccharides and polysaccharides, DNA can be protected from damage due to W and ultrasoft X-ray by a factor of 1.3-2.1 fo1d and 3.2-8.3 fold, respectively. The protective effect of cells exposed to UV or ultrasoft X-ray was also observed by branched oligosaccharides. The combination of MOP, a photoreagent, with carbohydrates increased the protective effects for DNA and cells, compared with that of a single use of MOP or carbohydrate alone.

레이져를 이용한 도핑 특성과 선택적 도핑 에미터 실리콘 태양전지의 제작 (Effects of Laser Doping on Selective Emitter Si Solar Cells)

  • 박성은;박효민;남정규;양정엽;이동호;민병권;김경남;박세진;이해석;김동환;강윤묵;김동섭
    • Current Photovoltaic Research
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    • 제4권2호
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    • pp.54-58
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    • 2016
  • Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.

MECHANICAL AND ADHESIONAL MANIPULATION TECHNIQUE FOR MICRO-ASSEMBLY UNDER SEM

  • Saito, Shigeki;Takahashi, Kunio;Onzawa, Tadao
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.720-725
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    • 2002
  • In recent years, techniques for micro-assembly with high repeatability under a scanning electron microscope (SEM) are required to construct highly functional micro-devices. Adhesion phenomenon is more significant for smaller objects, becanse adhesional force is proportional to size of the objects while gravitational force is proportional to the third power of it. It is also known that adhesional force between micro-objects exposed to Electron Beam irradiation of SEM increases with the elapsed time. Therefore, mechanical manipulation techniques using a needle-shaped tool by adhesional force are often adopted in basic researches where micro-objects are studied. These techniques, however, have not yet achieved the desired repeatability because many of these could not have been supported theoretically. Some techniques even need the process of trial-and-error. Thus, in this paper, mechanical and adhesional micro-manipulation are analyzed theoretically by introducing new physical factors, such as adhesional force and rolling-resistance, into the kinematic system consisting of a sphere, a needle-shaped tool, and a substrate. Through this analysis, they are revealed that how the micro-sphere behavior depends on the given conditions, and that it is possible to cause the fracture of the desired contact interfaces selectively by controlling the force direction in which the tool-tip loads to the sphere. Based on the acquired knowledge, a mode diagram, which indicates the micro-sphere behavior for the given conditions, is designed. By refening to this mode diagram, the practical technique of the pick and place manipulation of a micro-sphere under an SEM by the selective interface fracture is proposed.

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Formation of a thin nitrided GaAs layer

  • Park, Y.J.;Kim, S.I.;Kim, E.K.;Han, I.K.;Min, S.K.;O'Keeffe, P.;Mutoh, H.;Hirose, S.;Hara, K.;Munekata, H.;Kukimoto, H.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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    • pp.40-41
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    • 1996
  • Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

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중성자 조사에 의해 생성된 점결함 연구 (A study on point defects induced with neutron irradiation in silicon wafer)

  • 김진현;류근걸
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.62-66
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    • 2002
  • The conventional floating zone(FZ) crystal and Czochralski(CZ) silicon crystal have resistivity variations longitudinally as well as radially The resistivity variations of the conventional FZ and CZ crystal are not conformed to requirement of dopant distribution for power devices and thyristors. These resistivity variations in conventional cystals limits the reverse breakdown voltage that could be achieved and forced designers of high power diodes and thyristors to compromise the desired current-voltage characteristics. So to produce high Power diodes and thyristors, Neutron Transmutation Doping(NTD) technique is the one method just because NTD silicon provides very homogeneous distribution of doping concentration. This procedure involves the nuclear transmutation of silicon to phosphorus by bombardment of neutron to the crystal according to the reaction $^{30}$ Si(n,${\gamma}$)longrightarrow$^{31}$ Silongrightarrow(2.6 hr)$^{31}$ P+$\beta$$^{[-10]}$ . The radioactive isotope $^{31}$ Si is formed by $^{31}$ Si capturing a neutron, which then decays into the stable $^{31}$ P isotope (i.e., the donor atom), whose distribution is not dependent on the crystal growth parameters. In this research, neutron was irradiated on FZ silicon wafers which had high resistivity(1000~2000 Ω cm), for 26 and 8.3hours for samples of HTS-1 and HTS-2, and 13, 3.2, 2.0 hours for samples of IP-1, IP-2 and IP-3, respectively, to compare resistivity changes due to time differences. The designed resistivities were approached, which were 2.l Ωcm for HTS-1, 7.21 Ω cm for HTS-2, 1.792cm for IP-1, 6.83 Ωcm for IP-2, 9.23 Ωcm for IP-3, respectively. Point defects were investigated with Deep Level Transient Spectroscopy(DLTS). Four different defects were observed at 80K, 125K, 230K, and above 300K.

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Control of Airborne Organic Pollutants Using Plug-Flow Reactor Coated With Carbon Material-Titania Mixtures Under Visible-Light Irradiation

  • Jo, Wan-Kuen;Kang, Hyun-Jung;Kim, Mo-Keun
    • 한국환경과학회지
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    • 제22권10호
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    • pp.1263-1271
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    • 2013
  • Graphene oxide (GO)-titania composites have emerged as an attractive heterogeneous photocatalyst that can enhance the photocatalytic activity of $TiO_2$ nanoparticles owing to their potential interaction of electronic and adsorption natures. Accordingly, $TiO_2$-GO mixtures were synthesized in this study using a simple chemical mixing process, and their heterogeneous photocatalytic activities were investigated to determine the degradation of airborne organic pollutants (benzene, ethyl benzene, and o-xylene (BEX)) under different operational conditions. The Fourier transform infrared spectroscopy results demonstrated the presence of GO for the $TiO_2$-GO composites. The average efficiencies of the $TiO_2$-GO mixtures for the decomposition of each component of BEX determined during the 3-h photocatalytic processes were 26%, 92%, and 96%, respectively, whereas the average efficiencies of the unmodified $TiO_2$ powder were 3%, 8%, and 10%, respectively. Furthermore, the degradation efficiency of the unmodified $TiO_2$ powder for all target compounds decreased during the 3-h photocatalytic processes, suggesting a potential deactivation even during such a short time period. Two operational conditions (air flow entering into the air-cleaning devices and the indoor pollution levels) were found to be important factors for the photocatalytic decomposition of BEX molecules. Taken together, these results show that a $TiO_2$-GO mixture can be applied effectively for the purification of airborne organic pollutants when the operating conditions are optimized.